Invited Seminar
On the third Thursday of each month esteemed international experts area are invited to give (hybrid) presentation about their latest research.
Invited Seminars 2024
Date
|
Speaker
|
Affiliation
|
Country
|
Title
|
21.12.2023
|
|
Universität Bremen, Bremen
|
Gemany
|
Novel routes in molecular-beam epitaxy (MBE): The suboxide MBE (S-MBE) technique
|
16.11.2023
|
|
Caltech, Pasadena , CA
|
USA
|
Building the Computational Toolbox for Quantum Materials:
Precise First-Principles Calculations of Electron and Spin Dynamics
|
09.11.2023
|
|
Paul Scherrer Institute, Villigen in Switzerland
|
Switzerland
|
Soft-X-ray ARPES: k-resolved electronic structure from bulk materials to buried heterostructures and impurities
|
17.08.2023
|
|
Department of Physics, University of Oslo, Oslo
|
Norway
|
Defects, doping and diffusion in beta-Ga2O3
|
20.07.2023
|
|
Martin-Luther-Universität, Halle-Wittenberg
|
Germany
|
Unveiling Ultrafast Electron-Spin Dynamics, Electron-Phonon Coupling, and Novel Structural Order at Oxide Interfaces
|
15.06.2023
|
|
Max Planck Institute for Chemical Physics of Solids, Dresden
|
Germany
|
From the atoms up: nanoscale insights to the properties and synthesis of novel complex oxides
|
09.05.2023
|
|
Department of Chemical Engineering & Materials Science, University of Minnesota, Minneapolis, MN
|
USA
|
New Kind of Crystalline Line Defects in Perovskites Explored by Electron Microscopy
|
08.05.2023
|
|
Department of Chemical Engineering & Materials Science, University of Minnesota, Minneapolis, MN
|
USA
|
Navigating MBE Growth of Atomically Precise Complex Oxides using Source Chemistry
|
|
20.04.2023
|
|
Sensors Directorate, Air Force Research Laboratory, Dayton, OH
|
USA
|
Dielectric integration for Ga2O3
|
Date
|
Speaker
|
Affiliation
|
Country
|
Title
|
15.12.2022
|
|
Department of Physics, Harvard University, Cambridge, MA
|
USA
|
Superconductivity in layered Nickelates
|
17.11.2022
|
|
Department of Materials Science & Engineering, The Ohio State University, Columbus, OH
|
USA
|
Defects in Gallium Oxide – How We “See” and Understand Them
|
20.10.2022
|
|
Department of Materials, ETH Zurich, Zurich
|
Switzerland
|
In search of electrostatic happiness at surfaces
|
15.09.2022
|
|
Department of Physics & Astronomy, Seoul National University, Seoul
|
South Korea
|
Uniqueness of 2DEG state at LaInO3/BaSnO3 polar interface
|
16.06.2022
|
|
Department of Materials, University of California Santa Barbara, Santa Barbara, CA
|
USA
|
MOVPE-grown (010)-oriented Beta Gallium Oxide Epitaxial Materials and Power Devices
|
19.05.2022
|
|
Department of Materials & Engineering, University of Delaware, Newark, DE
|
USA
|
Theory of defects in Ga2O3
|
21.04.2022
|
|
Department of Electrical & Computer Engineering, University of Utah, Salt Lake City, UT
|
USA
|
Where are defects in ß-Ga2O3 and how do they get there
|
17.03.2022
|
|
Department of Chemistry, University College London, London
|
UK
|
Recent developments in Hard X-ray Photoelectron Spectroscopy and its Applications in Metal Oxides
|
Date
|
Speaker
|
Affiliation
|
Country
|
Title
|
17.11.2021
|
|
Lumiphase Corporation, Zurich
|
Switzerland
|
BaTiO3 for integrated photonics: epitaxial oxides on the market
|
20.10.2021
|
|
Department of Materials Science & Engineering, The Pennsylvania State University, University Park, PA
|
USA
|
Tetrahedral ferroelectrics based on cation-substituted ZnO and AIN
|
17.06.2021
|
|
Instituto Superior Técnico, University of Lisbon and INESC Microsystems & Nanotechnology, Lisbon
|
Portugal
|
Ion beam modification of β-Ga2O3
|
19.05.2021
|
|
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH
|
USA
|
Developments of Ga2O3, (AlxGa1-x) 2O3 and Heterostructures
|
21.04.2021
|
|
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA
|
USA
|
Thermal Engineering in Ultrawide Bandgap Semiconductors: The Challenges of Interfaces and Heterogenous Integration
|
25.03.2021
|
|
Department of Materials Science & Engineering, Ann Arbor, MI
|
USA
|
Rutile GeO2 as ultra-wide bandgap semiconductor
|
24.02.2021
|
|
Institute of Applied Physics, Technische Universität, Dresden
|
Germany
|
Hydrogen in antatase TiO2
|
