Research Highlights

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  • Structural defects and charge carrier mobility in homoepitaxial layers grown on (100) plane of β-Ga2O3 
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  • Suboxide-related kinetics, etching, thermodynamics, and catalysis governing the MBE of Ga2O3, In2O3, SnO2 and (In,Ga)2O3 
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  • Ga2O3-based devices 
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  • Faceting and step flow growth in the homoepitaxy of Ga2O3 
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  • Barium stannate based heterostructures for electronic applications 
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  • β-Ga2O3 fundamental properties and their anisotropy 
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  • Joint computational and experimental examination of the phase stability of (In xGa1–x)2O3 ternary alloys 
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  • Anisotropy of optical and electrical properties of rutile SnO2 
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  • Finding the right balance for SnO growth enables the realization of all-oxide SnO/Ga2O3 vertical pnheterojunction diodes 
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