Cluster D
In collaboration with the Leibniz-Institut für Kristallzüchtung (IKZ), FBH has recently started activities to realize vertical β-Ga2O3 FinFET devices.
Vertical β-Ga2O3 FinFET devices
Cluster P
With the example of BaSnO3, this work demonstrates a fruitful synergy between different high-level theoretical and experimental methods for a quantitative comparison of excited-state properties of complex materials.
Excitations in cubic BaSnO3:a consistent picture revealed by combining theory and experiment
Cluster G
A team of bulk crystal growers, epitaxy, and electron microscopy experts from GraFOx cluster G laid the foundation to realize two-dimensional electron gases with high room-temperature mobility using perovskite oxides.
Realizing perovskite interfaces for high-mobility two-dimensional electron gases
Archive
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Structural defects and charge carrier mobility in homoepitaxial layers grown on (100) plane of β-Ga2O3
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Suboxide-related kinetics, etching, thermodynamics, and catalysis governing the MBE of Ga2O3, In2O3, SnO2 and (In,Ga)2O3
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Ga2O3-based devices
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Faceting and step flow growth in the homoepitaxy of Ga2O3
Barium stannate based heterostructures for electronic applications
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β-Ga2O3 fundamental properties and their anisotropy
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Joint computational and experimental examination of the phase stability of (In xGa1–x)2O3 ternary alloys
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Anisotropy of optical and electrical properties of rutile SnO2
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Finding the right balance for SnO growth enables the realization of all-oxide SnO/Ga2O3 vertical pnheterojunction diodes
