Publications

GraFOx Publications

    Egbo, K., Lähnemann, J., Falkenstein, A., Varley, J. B., & Bierwagen, O. (2023). Acceptor and compensating donor doping ofsingle crystalline SnO (001) films grown bymolecular beam epitaxy and its perspectives foroptoelectronics and gas-sensing. Applied Physics Letters, 122, 122101. https://doi.org/10.1063/5.0130935
    Baki, A., Abdeldayem, M., Morales, C., Flege, J. I., Klimm, D., Bierwagen, O., & Schwarzkopf, J. (2023). Potential of La-Doped SrTiO3 Thin Films Grown by Metal–Organic Vapor Phase Epitaxy for Thermoelectric Applications. Crystal Growth & Design, 01438. https://doi.org/10.1021/acs.cgd.2c01438
    Reis, A., Hanke, M., Bierwagen, O., Trampert, A., Mazzolini, P., & Welter, E. (2023). Disorder–order transition in Ga2O3 and its solid solution with In2O3 upon thermal annealing. Physica Status Solidi (b), 2200535. https://doi.org/10.1002/pssb.202200535
    Egbo, K., Luna, E., Lähnemann, J., Hoffmann, G., Trampert, A., Grümbel, J., Kluth, E., Feneberg, M., Goldhahn, R., & Bierwagen, O. (2023). Epitaxial synthesis of unintentionally doped p−type SnO (001) via suboxide molecular beam epitaxy. Journal of Applied Physics, 133(4), 045701. https://doi.org/10.1063/5.0131138
    Jaber, N., Feldl, J., Stoever, J., Irmscher, K., Albrecht, M., Ramsteiner, M., & Schwarzkopf, J. (2023). Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO2 films grown by pulsed-laser deposition. Physical Review Materials, 7(1), 014601. https://doi.org/10.1103/PhysRevMaterials.7.014601
    Vogt, S., Petersen, C., Kneiß, M., Splith, D., Schultz, T., von Wenckstern, H., Koch, N., & Grundmann, M. (2022). Realization of conductive n‐type doped α−Ga2O3 on m‐plane sapphire grown by a two‐step pulsed laser deposition process. Physica Status Solidi (a), 220(3), 2200721. https://doi.org/10.1002/pssa.202200721
    Rehm, J., Chou, T.-S., Anooz, S. B., Seyidov, P., Fiedler, A., Galazka, Z., & Popp, A. (2022). Perspectives on MOVPE-grown (100) β−Ga2O3 thin films and its Al-alloy for power electronics application. Applied Physics Letters, 121(24). https://doi.org/10.1063/5.0122886
    Seyidov, P., Varley, J. B., Galazka, Z., Chou, T.-S., Popp, A., Fiedler, A., & Irmscher, K. (2022). Cobalt as a promising dopant for producing semi-insulating β−Ga2O3crystals: Charge state transition levels from experiment and theory. APL Materials, 10(11). https://doi.org/10.1063/5.0112915
    Pfuetzenreuter, D., Kim, S., Cho, H., Bierwagen, O., Zupancic, M., Albrecht, M., Char, K., & Schwarzkopf, J. (2022). Confinement of electrons at the LaInO3/BaSnO3 heterointerface. Advanced Materials Interfaces, 9, 2201279. https://doi.org/10.1002/admi.202201279
    Guimaraes, M. de O., Richter, C., Hanke, M., Anooz, S. B., Wang, Y., Schwarzkopf, J., & Schmidbauer, M. (2022). Ferroelectric phase transitions in tensile-strained NaNbO3 epitaxial films probed by in situ x-ray diffraction. Journal of Applied Physics, 132(15). https://doi.org/10.1063/5.0113949
    Wang, Y., Bin Anooz, S., Niu, G., Schmidbauer, M., Wang, L., Ren, W., & Schwarzkopf, J. (2022). Thickness effect on ferroelectric domain formation in compressively strained K0.65Na0.35NbO3 epitaxial films. Physical Review Materials, 6(8). https://doi.org/10.1103/PhysRevMaterials.6.084413
    Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Miller, W., Tran, T. T. V., Rehm, J., Albrecht, M., & Popp, A. (2022). Machine learning supported analysis of MOVPE grown β−Ga2O3 thin films on sapphire. Journal of Crystal Growth, 592. https://doi.org/10.1016/j.jcrysgro.2022.126737
    Vorwerk, C., Sottile, F., & Draxl, C. (2022). All-electron many-body approach to resonant inelastic X-ray scattering. Physical Chemistry Chemical Physics, 24(29), 17439–17448. https://doi.org/10.1039/d2cp00994c
    Ardenghi, A., Bierwagen, O., Falkenstein, A., Hoffmann, G., Lähnemann, J., Martin, M., & Mazzolini, P. (2022). Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β−Ga2O3. Applied Physics Letters, 121(4), 042109. https://doi.org/10.1063/5.0087987
    Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Rehm, J., Tran, T. T. V., Irmscher, K., Seyidov, P., Miller, W., Galazka, Z., Albrecht, M., & Popp, A. (2022). Si doping mechanism in MOVPE-grown (100) β−Ga2O3 films. Applied Physics Letters, 121(3). https://doi.org/10.1063/5.0096846
    Hamada, M., Ganschow, S., Klimm, D., Serghiou, G., Reichmann, H.-J., & Bickermann, M. (2022). Wüstite (Fe1-xO) - Thermodynamics and crystal growth. Zeitschrift Für Naturforschung B, 77(6), 463–468. https://doi.org/10.1515/znb-2022-0071
    Janzen, B. M., Gillen, R., Galazka, Z., Maultzsch, J., & Wagner, M. R. (2022). First- and second-order Raman spectroscopy of monoclinic β−Ga2O3. Physical Review Materials, 6(5). https://doi.org/10.1103/PhysRevMaterials.6.054601
    Bin Anooz, S., Wang, Y., Petrik, P., de Oliveira Guimaraes, M., Schmidbauer, M., & Schwarzkopf, J. (2022). High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain. Applied Physics Letters, 120(20). https://doi.org/10.1063/5.0087959
    Klimm, D., Amgalan, B., Ganschow, S., Kwasniewski, A., Galazka, Z., & Bickermann, M. (2022). The thermal conductivity tensor of β−Ga2O3 from 300 to 1275 K. Crystal Research and Technology. https://doi.org/10.1002/crat.202200204
    Galazka, Z., Ganschow, S., Seyidov, P., Irmscher, K., Pietsch, M., Chou, T.-S., Bin Anooz, S., Grueneberg, R., Popp, A., Dittmar, A., Kwasniewski, A., Suendermann, M., Klimm, D., Straubinger, T., Schroeder, T., & Bickermann, M. (2022). Two inch diameter, highly conducting bulk β−Ga2O3 single crystals grown by the Czochralski method. Applied Physics Letters, 120(15), 152101. https://doi.org/10.1063/5.0086996
    Guguschev, C., Richter, C., Brützam, M., Dadzis, K., Hirschle, C., Gesing, T. M., Schulze, M., Kwasniewski, A., Schreuer, J., & Schlom, D. G. (2022). Revisiting the growth of large (Mg,Zr):SrGa12O19 single crystals: Core formation and its impact on structural homogeneity revealed by correlative X-ray imaging. Crystal Growth & Design, 22(4), 2557–2568. https://doi.org/10.1021/acs.cgd.2c00030
    Papadogianni, A., Nagata, T., & Bierwagen, O. (2022). The electrical conductivity of cubic (In1−xGax)2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer. Japanese Journal of Applied Physics, 61(4), 045502. https://doi.org/10.35848/1347-4065/ac4ec7
    Boy, J., Mitdank, R., Galazka, Z., & Fischer, S. F. (2022). Thermal conductivity, diffusivity and specific heat capacity of as-grown, degenerate single-crystalline ZnGa2O4. Materials Research Express. https://doi.org/10.1088/2053-1591/ac5f8a
    Tetzner, K., Egbo, K., Klupsch, M., Unger, R.-S., Popp, A., Chou, T.-S., Anooz, S. B., Galazka, Z., Trampert, A., Bierwagen, O., & Würfl, J. (2022). SnO/β−Ga2O3 heterojunction field-effect transistors and vertical p–n diodes. Applied Physics Letters, 120(11), 112110. https://doi.org/10.1063/5.0083032
    Aggoune, W., Eljarrat, A., Nabok, D., Irmscher, K., Zupancic, M., Galazka, Z., Albrecht, M., Koch, C., & Draxl, C. (2022). A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment. Communications Materials, 3(1), 12. https://doi.org/10.1038/s43246-022-00234-6
    Grümbel, J., Goldhahn, R., Jeon, D.-W., & Feneberg, M. (2022). Anharmonicity of lattice vibrations in thin film α-Ga2O3 investigated by temperature dependent Raman spectroscopy. Applied Physics Letters, 120(2), 022104. https://doi.org/10.1063/5.0074260
    Lion, K., Pavone, P., & Draxl, C. (2022). Elastic stability of Ga2O3 : Addressing the β to α phase transition from first principles. Physical Review Materials, 6(1), 013601. https://doi.org/10.1103/PhysRevMaterials.6.013601
    Chou, T.-S., Bin Anooz, S., Grüneberg, R., Irmscher, K., Dropka, N., Rehm, J., Tran, T. T. V., Miller, W., Seyidov, P., Albrecht, M., & Popp, A. (2021). Toward precise n-Type doping control in MOVPE-grown β−Ga2O3 thin films by deep-learning approach. Crystals, 12(1), 8. https://doi.org/10.3390/cryst12010008
    Kneiß, M., Splith, D., von Wenckstern, H., Lorenz, M., Schultz, T., Koch, N., & Grundmann, M. (2021). Strain states and relaxation for α-(AlxGa1-x)2O3  thin films on prismatic planes of alphaAl2O3in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt. Journal of Materials Research, 36(23), 4816–4831. https://doi.org/10.1557/s43578-021-00375-3
    Galazka, Z., Irmscher, K., Pietsch, M., Ganschow, S., Schulz, D., Klimm, D., Hanke, I. M., Schroeder, T., & Bickermann, M. (2021). Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides. Journal of Materials Research, 36(23), 4746–4755. https://doi.org/10.1557/s43578-021-00353-9
    Pfützenreuter, D., Zupancic, M., Galazka, Z., Schewski, R., Dittmar, A., Irmscher, K., Albrecht, M., & Schwarzkopf, J. (2021). Epitaxial BaSnO3 thin films with low dislocation density grown on lattice matched LaInO3 substrates. Nanotechnology, 32(50), 505609. https://doi.org/10.1088/1361-6528/ac291c
    Chou, T.-S., Seyidov, P., Bin Anooz, S., Grüneberg, R., Tran, T. T. V., Irmscher, K., Albrecht, M., Galazka, Z., Schwarzkopf, J., & Popp, A. (2021). Fast homoepitaxial growth of (100) β−Ga2O3 thin films via MOVPE. AIP Advances, 11(11), 115323. https://doi.org/10.1063/5.0069243
    Hoffmann, G., Cheng, Z., Brandt, O., & Bierwagen, O. (2021). Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources. APL Materials, 9(11), 111110. https://doi.org/10.1063/5.0058541
    Aggoune, W., Irmscher, K., Nabok, D., Vona, C., Bin Anooz, S., Galazka, Z., Albrecht, M., & Draxl, C. (2021). Fingerprints of optical absorption in the perovskite LaInO3 : Insight from many-body theory and experiment. Physical Review B, 103(11), 115105. https://doi.org/10.1103/PhysRevB.103.115105
    Reichmann, F., Dabrowski, J., Becker, A. P., Klesse, W. M., Irmscher, K., Schewski, R., Galazka, Z., & Mulazzi, M. (2021). Experimental and theoretical investigation of the surface electronic structure of ZnGa2O4 (100) single‐crystals. Physica Status Solidi (b), 259(3), 2100452. https://doi.org/10.1002/pssb.202100452
    Bin Anooz, S., Grüneberg, R., Chou, T.-S., Fiedler, A., Irmscher, K., Wouters, C., Schewski, R., Albrecht, M., Galazka, Z., Miller, W., Schwarzkopf, J., & Popp, A. (2021). Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β−Ga2O3 thin films grown by MOVPE. Journal of Physics D: Applied Physics, 54(3), 034003. https://doi.org/10.1088/1361-6463/abb6aa
    Baki, A., Stöver, J., Schulz, T., Markurt, T., Amari, H., Richter, C., Martin, J., Irmscher, K., Albrecht, M., & Schwarzkopf, J. (2021). Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy. Scientific Reports, 11(1), 7497. https://doi.org/10.1038/s41598-021-87007-2
    Aggoune, W., & Draxl, C. (2021). Tuning two-dimensional electron and hole gases at LaInO3/BaSnO3 interfaces by polar distortions, termination, and thickness. Npj Computational Materials, 7(1), 174. https://doi.org/10.1038/s41524-021-00646-x
    Amari, H., Schulz, T., Baki, A., Stöver, J., Richter, C., Martin, J., Irmscher, K., Schwarzkopf, J., & Albrecht, M. (2021). In-situ TEM Observations of resistance switching in strontium titanate devices. Microscopy and Microanalysis, 27(S2), 69–70. https://doi.org/10.1017/S1431927621013349
    Kröncke, H., Maudet, F., Banerjee, S., Albert, J., Wiesner, S., Deshpande, V., & Dubourdieu, C. (2021). Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide. Journal of Vacuum Science & Technology A, 39(5), 052408. https://doi.org/10.1116/6.0001207
    Galazka, Z., Irmscher, K., Ganschow, S., Zupancic, M., Aggoune, W., Draxl, C., Albrecht, M., Klimm, D., Kwasniewski, A., Schulz, T., Pietsch, M., Dittmar, A., Grueneberg, R., Juda, U., Schewski, R., Bergmann, S., Cho, H., Char, K., Schroeder, T., & Bickermann, M. (2021). Melt growth and physical properties of bulk LaInO3 single crystals. Physica Status Solidi (a), 218(16), 2100016. https://doi.org/10.1002/pssa.202100016
    Grundmann, M., & Lorenz, M. (2021). Azimuthal anisotropy of rhombohedral (corundum phase) heterostructures. Physica Status Solidi (b), 258(7), 2100104. https://doi.org/10.1002/pssb.202100104
    Galazka, Z., Ganschow, S., Irmscher, K., Klimm, D., Albrecht, M., Schewski, R., Pietsch, M., Schulz, T., Dittmar, A., Kwasniewski, A., Grueneberg, R., Anooz, S. B., Popp, A., Juda, U., Hanke, I. M., Schroeder, T., & Bickermann, M. (2021). Bulk single crystals of β−Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides. Progress in Crystal Growth and Characterization of Materials, 67(1), 100511. https://doi.org/10.1016/j.pcrysgrow.2020.100511
    Böttcher, K., Miller, W., & Ganschow, S. (2021). Numerical modeling of heat transfer and thermal stress at the Czochralski growth of neodymium scandate single crystals. Crystal Research and Technology, 56(1), 2000106. https://doi.org/10.1002/crat.202000106
    Janzen, B. M., Mazzolini, P., Gillen, R., Falkenstein, A., Martin, M., Tornatzky, H., Maultzsch, J., Bierwagen, O., & Wagner, M. R. (2021). Isotopic study of Raman active phonon modes in β−Ga2O3. Journal of Materials Chemistry C, 9(7), 2311–2320. https://doi.org/10.1039/D0TC04101G
    Kockert, M., Mitdank, R., Moon, H., Kim, J., Mogilatenko, A., Moosavi, S. H., Kroener, M., Woias, P., Lee, W., & Fischer, S. F. (2021). Semimetal to semiconductor transition in Bi/TiO2 core/shell nanowires. Nanoscale Advances, 3(1), 263–271. https://doi.org/10.1039/D0NA00658K
    Grundmann, M., Stralka, T., Lorenz, M., Selle, S., Patzig, C., & Höche, T. (2021). Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3. Materials Advances, 2(13), 4316–4322. https://doi.org/10.1039/D1MA00204J
    Janzen, B. M., Mazzolini, P., Gillen, R., Peltason, V. F. S., Grote, L. P., Maultzsch, J., Fornari, R., Bierwagen, O., & Wagner, M. R. (2021). Comprehensive Raman study of orthorhombic κ/ε-Ga2O3  and the impact of rotational domains. Journal of Materials Chemistry C, 9(40), 14175–14189. https://doi.org/10.1039/D1TC03500B
    Zupancic, M., Aggoune, W., Markurt, T., Kim, Y., Kim, Y. M., Char, K., Draxl, C., & Albrecht, M. (2020). Role of the interface in controlling the epitaxial relationship between orthorhombic LaInO3 and cubic BaSnO3. Physical Review Materials, 4(12), 123605. https://doi.org/10.1103/PhysRevMaterials.4.123605
    Budde, M., Splith, D., Mazzolini, P., Tahraoui, A., Feldl, J., Ramsteiner, M., von Wenckstern, H., Grundmann, M., & Bierwagen, O. (2020). SnO/β−Ga2O3 pn heterojunction diodes. Applied Physics Letters, 117(25), 252106. https://doi.org/10.1063/5.0031442