GraFOx Publications 2024

    Chen, W., Egbo, K., Zhang, H., Ardenghi, A., & Bierwagen, O. (2024). Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge. Journal of Vacuum Science & Technology A, 42(3), 032708.
    Meißner, M., Bernhardt, N., Nippert, F., Janzen, B. M., Galazka, Z., & Wagner, M. R. (2024). Anisotropy of optical transitions in β-Ga2O3 investigated by polarized photoluminescence excitation spectroscopy. Applied Physics Letters, 124(15), 152102.
    Zupancic, M., Aggoune, W., Gloter, A., Hoffmann, G., Schmidt, F.-P., Galazka, Z., Pfützenreuter, D., Riaz, A. A., Schlueter, C., Amari, H., Regoutz, A., Schwarzkopf, J., Lunkenbein, T., Bierwagen, O., Draxl, C., & Albrecht, M. (2024). Polar discontinuity governs surface segregation and interface termination: A case study of LaInO3/BaSnO3. Physical Review Materials, 8(3), 034602.
    Mazzolini, P., Wouters, C., Albrecht, M., Falkenstein, A., Martin, M., Vogt, P., & Bierwagen, O. (2024). Molecular Beam Epitaxy of β-(In x Ga1–x )2O3 on β-Ga 2O3 (010): Compositional control, layer quality, anisotropic strain relaxation, and prospects for two-dimensional electron gas confinement. ACS Applied Materials & Interfaces, acsami.3c19095.
    Wouters, C., Nofal, M., Mazzolini, P., Zhang, J., Remmele, T., Kwasniewski, A., Bierwagen, O., & Albrecht, M. (2024). Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3. APL Materials, 12(1), 011110.

    GraFOx Publications 2023

    Seyidov, P., Varley, J. B., Frodason, Y. K., Klimm, D., Vines, L., Galazka, Z., Chou, T., Popp, A., Irmscher, K., & Fiedler, A. (2023). Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga₂O₃ Crystals. Advanced Electronic Materials, 2300428.
    Seyidov, P., Varley, J. B., Shen, J.-X., Galazka, Z., Chou, T.-S., Popp, A., Albrecht, M., Irmscher, K., & Fiedler, A. (2023). Charge state transition levels of Ni in β-Ga₂O₃ crystals from experiment and theory: An attractive candidate for compensation doping. Journal of Applied Physics, 134(20), 205701.
    Chou, T.-S., Rehm, J., Bin Anooz, S., Ernst, O., Akhtar, A., Galazka, Z., Miller, W., Albrecht, M., Seyidov, P., Fiedler, A., & Popp, A. (2023). Exploring miscut angle influence on (100) β-Ga₂O₃ homoepitaxial films growth: Comparing MOVPE growth with MBE approaches. Journal of Applied Physics, 134(19), 195301.
    Montag, S., Splith, D., Kneiß, M., Grundmann, M., Garcia Fernandez, J., Prytz, Ø., & von Wenckstern, H. (2023). Cation segregation observed in an (In,Ga)₂O₃ material thin film library beyond the miscibility limit of the bixbyite structure. Physical Review Materials, 7(9), 094603.
    Reis, A., Hanke, M., Lopes, J. M. J., & Trampert, A. (2023). Anisotropic strain relaxation in epitaxially constrained α-(Al,Ga)₂O₃ thin films on a-plane Al₂O₃. Applied Physics Letters, 123(12), 122102.
    Hoffmann, G., Zupancic, M., Klimm, D., Schewski, R., Albrecht, M., Ramsteiner, M., Zohair, F., & Bierwagen, O. (2023). Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3 (110): Growth window, strain relaxation, and domain pattern. Physical Review Materials, 7(8), 084605.
    Maudet, F., Dijck, C. V., Raza, M. H., & Dubourdieu, C. (2023). A fully automatized method for the unambiguous wavelength-by-wavelength determination of the thickness and optical property of a very thin film with a transparent range. Journal of Applied Physics, 134(4), 045301.
    Van Dijck, C., Maudet, F., Dubourdieu, C., & Deshpande, V. (2023). Amorphous GaOx based charge trap memory device for neuromorphic applications. Solid-State Electronics, 207, 108717.
    Tetzner, K., Thies, A., Seyidov, P., Chou, T.-S., Rehm, J., Ostermay, I., Galazka, Z., Fiedler, A., Popp, A., Würfl, J., & Hilt, O. (2023). Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing. Journal of Vacuum Science & Technology A, 41(4), 043102.
    Köpp, S., Petersen, C., Splith, D., Grundmann, M., & von Wenckstern, H. (2023). Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films. Journal of Vacuum Science & Technology A, 41(4), 043411.
    Chen, W., Egbo, K., Tornatzky, H., Ramsteiner, M., Wagner, M. R., & Bierwagen, O. (2023). In situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge. APL Materials, 11(7), 071110.
    Schultz, T., Kneiß, M., Storm, P., Splith, D., von Wenckstern, H., Koch, C. T., Hammud, A., Grundmann, M., & Koch, N. (2023). Growth of κ-([Al,In]ₓGa₁₋ₓ)₂O₃ quantum wells and their potential for quantum-well infrared photodetectors. ACS Applied Materials & Interfaces, 15(24), 29535–29541.
    Chou, T.-S., Seyidov, P., Bin Anooz, S., Grüneberg, R., Rehm, J., Tran, T. T. V., Fiedler, A., Tetzner, K., Galazka, Z., Albrecht, M., & Popp, A. (2023). High-mobility 4 μm MOVPE-grown (100) β-Ga₂O₃ film by parasitic particles suppression. Japanese Journal of Applied Physics, 62(SF), SF1004.
    Petersen, C., Vogt, S., Kneiß, M., von Wenckstern, H., & Grundmann, M. (2023). PLD of α-Ga₂O₃ on m-plane Al₂O₃: Growth regime, growth process, and structural properties. APL Materials, 11(6), 061122.
    Kluth, E., Anhar Uddin Bhuiyan, A. F. M., Meng, L., Bläsing, J., Zhao, H., Strittmatter, A., Goldhahn, R., & Feneberg, M. (2023). Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlₓGa₁₋ₓ)₂O₃ alloys. Japanese Journal of Applied Physics, 62(5), 051001.
    Tetzner, K., Klupsch, M., Popp, A., Bin Anooz, S., Chou, T.-S., Galazka, Z., Ickert, K., Matalla, M., Unger, R.-S., Treidel, E. B., Wolf, M., Trampert, A., Würfl, J., & Hilt, O. (2023). Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm −1. Japanese Journal of Applied Physics, 62(SF), SF1010.
    Baki, A., Abdeldayem, M., Morales, C., Flege, J. I., Klimm, D., Bierwagen, O., & Schwarzkopf, J. (2023). Potential of La-doped SrTiO₃ thin films grown by metal–organic vapor phase epitaxy for thermoelectric applications. Crystal Growth & Design, 23(4), 2522–2530.
    Egbo, K., Lähnemann, J., Falkenstein, A., Varley, J. B., & Bierwagen, O. (2023). Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing. Applied Physics Letters, 122, 122101.
    Kluth, E., Fay, M., Parmenter, C., Roberts, J., Smith, E., Stoppiello, C., Massabuau, F., Goldhahn, R., & Feneberg, M. (2023). Redshift and amplitude increase in the dielectric function of corundum-like α-(TiₓGa₁₋ₓ)₂O₃. Applied Physics Letters, 122(9), 092101.
    Reis, A., Hanke, M., Bierwagen, O., Trampert, A., Mazzolini, P., & Welter, E. (2023). Disorder–Order transition in Ga₂O₃ and its solid solution with In₂O₃ upon thermal annealing. Physica Status Solidi (b), 2200535.
    Chou, T.-S., Seyidov, P., Bin Anooz, S., Grüneberg, R., Pietsch, M., Rehm, J., Tran, T. T. V., Tetzner, K., Galazka, Z., Albrecht, M., Irmscher, K., Fiedler, A., & Popp, A. (2023). Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga₂O₃ films for vertical device application. Applied Physics Letters, 122(5), 052102.
    Jaber, N., Feldl, J., Stoever, J., Irmscher, K., Albrecht, M., Ramsteiner, M., & Schwarzkopf, J. (2023). Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO₂ films grown by pulsed-laser deposition. Physical Review Materials, 7(1), 014601.
    Galazka, Z., Fiedler, A., Popp, A., Ganschow, S., Kwasniewski, A., Seyidov, P., Pietsch, M., Dittmar, A., Anooz, S. B., Irmscher, K., Suendermann, M., Klimm, D., Chou, T.-S., Rehm, J., Schroeder, T., & Bickermann, M. (2023). Bulk single crystals and physical properties of β-(AlₓGa₁₋ₓ)₂O₃ (x = 0–0.35) grown by the Czochralski method. Journal of Applied Physics, 133(3), 035702.
    Egbo, K., Luna, E., Lähnemann, J., Hoffmann, G., Trampert, A., Grümbel, J., Kluth, E., Feneberg, M., Goldhahn, R., & Bierwagen, O. (2023). Epitaxial synthesis of unintentionally doped P-type SnO (001) via suboxide molecular beam epitaxy. Journal of Applied Physics, 133(4), 045701.

    GraFOx Publications 2022

    Rehm, J., Chou, T.-S., Anooz, S. B., Seyidov, P., Fiedler, A., Galazka, Z., & Popp, A. (2022). Perspectives on MOVPE-grown (100) β-Ga₂O₃ thin films and its Al-alloy for power electronics application. Applied Physics Letters, 121(24), 240503.
    Vogt, S., Petersen, C., Kneiß, M., Splith, D., Schultz, T., von Wenckstern, H., Koch, N., & Grundmann, M. (2022). Realization of conductive N-type doped α-Ga₂O₃ on M-plane sapphire grown by a two-step pulsed laser deposition process. Physica Status Solidi (a), 220(3), 2200721.
    Klimm, D., Amgalan, B., Ganschow, S., Kwasniewski, A., Galazka, Z., & Bickermann, M. (2022). The thermal conductivity tensor of β-Ga₂O₃ from 300 to 1275 K. Crystal Research and Technology, 58(2), 2200204.
    Seyidov, P., Varley, J. B., Galazka, Z., Chou, T.-S., Popp, A., Fiedler, A., & Irmscher, K. (2022). Cobalt as a promising dopant for producing semi-insulating β-Ga₂O₃ crystals: Charge state transition levels from experiment and theory. APL Materials, 10(11), 111109.
    Pfützenreuter, D., Kim, S., Cho, H., Bierwagen, O., Zupancic, M., Albrecht, M., Char, K., & Schwarzkopf, J. (2022). Confinement of electrons at the LaInO₃/BaSnO₃ heterointerface. Advanced Materials Interfaces, 9, 2201279.
    Guimaraes, M. de O., Richter, C., Hanke, M., Anooz, S. B., Wang, Y., Schwarzkopf, J., & Schmidbauer, M. (2022). Ferroelectric phase transitions in tensile-strained NaNbO₃ epitaxial films probed by in situ x-Ray diffraction. Journal of Applied Physics, 132(15), 154102.
    Wang, Y., Bin Anooz, S., Niu, G., Schmidbauer, M., Wang, L., Ren, W., & Schwarzkopf, J. (2022). Thickness effect on ferroelectric domain formation in compressively strained K0.65Na0.35NbO₃ epitaxial films. Physical Review Materials, 6(8), 084413.
    Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Miller, W., Tran, T. T. V., Rehm, J., Albrecht, M., & Popp, A. (2022). Machine learning supported analysis of MOVPE grown β-Ga₂O₃ thin films on sapphire. Journal of Crystal Growth, 592, 126737.
    Vorwerk, C., Sottile, F., & Draxl, C. (2022). All-electron many-body approach to resonant inelastic X-ray scattering. Physical Chemistry Chemical Physics, 24(29), 17439–17448.
    Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Rehm, J., Tran, T. T. V., Irmscher, K., Seyidov, P., Miller, W., Galazka, Z., Albrecht, M., & Popp, A. (2022). Si doping mechanism in MOVPE-grown (100) β-Ga₂O₃ films. Applied Physics Letters, 121(3), 032103.
    Ardenghi, A., Bierwagen, O., Falkenstein, A., Hoffmann, G., Lähnemann, J., Martin, M., & Mazzolini, P. (2022). Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga₂O₃. Applied Physics Letters, 121(4), 042109.
    Hamada, M., Ganschow, S., Klimm, D., Serghiou, G., Reichmann, H.-J., & Bickermann, M. (2022). Wüstite (Fe₁₋ₓO) - Thermodynamics and crystal growth. Zeitschrift Für Naturforschung B, 77(6), 463–468.
    Janzen, B. M., Gillen, R., Galazka, Z., Maultzsch, J., & Wagner, M. R. (2022). First- and second-order Raman spectroscopy of monoclinic β-Ga₂O₃. Physical Review Materials, 6(5), 054601.
    Bin Anooz, S., Wang, Y., Petrik, P., de Oliveira Guimaraes, M., Schmidbauer, M., & Schwarzkopf, J. (2022). High temperature phase transitions in NaNbO₃ epitaxial films grown under tensile lattice strain. Applied Physics Letters, 120(20), 202901.
    Papadogianni, A., Nagata, T., & Bierwagen, O. (2022). The electrical conductivity of cubic (In₁₋ₓGaₓ)₂O₃ films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer. Japanese Journal of Applied Physics, 61(4), 045502.
    Guguschev, C., Richter, C., Brützam, M., Dadzis, K., Hirschle, C., Gesing, T. M., Schulze, M., Kwasniewski, A., Schreuer, J., & Schlom, D. G. (2022). Revisiting the growth of large (Mg,Zr):SrGa₁₂O₁₉ Single crystals: Core formation and its impact on structural homogeneity revealed by correlative X-ray imaging. Crystal Growth & Design, 22(4), 2557–2568.
    Galazka, Z., Ganschow, S., Seyidov, P., Irmscher, K., Pietsch, M., Chou, T.-S., Bin Anooz, S., Grueneberg, R., Popp, A., Dittmar, A., Kwasniewski, A., Suendermann, M., Klimm, D., Straubinger, T., Schroeder, T., & Bickermann, M. (2022). Two inch diameter, highly conducting bulk β-Ga₂O₃ single crystals grown by the Czochralski method. Applied Physics Letters, 120(15), 152101.
    Boy, J., Mitdank, R., Galazka, Z., & Fischer, S. F. (2022). Thermal conductivity, diffusivity and specific heat capacity of as-Grown, degenerate single-crystalline ZnGa₂O₄. Materials Research Express, 9(6), 065902.
    Tetzner, K., Egbo, K., Klupsch, M., Unger, R.-S., Popp, A., Chou, T.-S., Anooz, S. B., Galazka, Z., Trampert, A., Bierwagen, O., & Würfl, J. (2022). SnO/β-Ga₂O₃ heterojunction field-effect transistors and vertical p–n diodes. Applied Physics Letters, 120(11), 112110.
    Aggoune, W., Eljarrat, A., Nabok, D., Irmscher, K., Zupancic, M., Galazka, Z., Albrecht, M., Koch, C., & Draxl, C. (2022). A consistent picture of excitations in cubic BaSnO₃ revealed by combining theory and experiment. Communications Materials, 3(1), 12.
    Lion, K., Pavone, P., & Draxl, C. (2022). Elastic stability of Ga₂O₃ : Addressing the β to α phase transition from first principles. Physical Review Materials, 6(1), 013601.
    Grümbel, J., Goldhahn, R., Jeon, D.-W., & Feneberg, M. (2022). Anharmonicity of lattice vibrations in thin film α-Ga₂O₃ investigated by temperature dependent Raman spectroscopy. Applied Physics Letters, 120(2), 022104.

    GraFOx Publications 2021

    Reichmann, F., Dabrowski, J., Becker, A. P., Klesse, W. M., Irmscher, K., Schewski, R., Galazka, Z., & Mulazzi, M. (2021). Experimental and theoretical investigation of the surface electronic structure of ZnGa₂O₄ (100) single-crystals. Physica Status Solidi (b), 259(3), 2100452.
    Pfützenreuter, D., Zupancic, M., Galazka, Z., Schewski, R., Dittmar, A., Irmscher, K., Albrecht, M., & Schwarzkopf, J. (2021). Epitaxial BaSnO₃ thin films with low dislocation density grown on lattice matched LaInO₃ substrates. Nanotechnology, 32(50), 505609.
    Kneiß, M., Splith, D., von Wenckstern, H., Lorenz, M., Schultz, T., Koch, N., & Grundmann, M. (2021). Strain states and relaxation for α-(AlₓGa₁₋ₓ)₂O₃ thin films on prismatic planes of alphaAl2O3in the full composition range: Fundamental difference of a- and m-Epitaxial planes in the manifestation of shear strain and lattice tilt. Journal of Materials Research, 36(23), 4816–4831.
    Galazka, Z., Irmscher, K., Pietsch, M., Ganschow, S., Schulz, D., Klimm, D., Hanke, I. M., Schroeder, T., & Bickermann, M. (2021). Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides. Journal of Materials Research, 36(23), 4746–4755.
    Chou, T.-S., Bin Anooz, S., Grüneberg, R., Irmscher, K., Dropka, N., Rehm, J., Tran, T. T. V., Miller, W., Seyidov, P., Albrecht, M., & Popp, A. (2021). Toward precise N-Type doping control in MOVPE-grown β-Ga₂O₃ thin films by deep-learning approach. Crystals, 12(1), 8.
    Baki, A., Stöver, J., Schulz, T., Markurt, T., Amari, H., Richter, C., Martin, J., Irmscher, K., Albrecht, M., & Schwarzkopf, J. (2021). Influence of Sr deficiency on structural and electrical properties of SrTiO₃ thin films grown by Metal–Organic vapor phase epitaxy. Scientific Reports, 11(1), 7497.
    Hoffmann, G., Cheng, Z., Brandt, O., & Bierwagen, O. (2021). Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources. APL Materials, 9(11), 111110.
    Chou, T.-S., Seyidov, P., Bin Anooz, S., Grüneberg, R., Tran, T. T. V., Irmscher, K., Albrecht, M., Galazka, Z., Schwarzkopf, J., & Popp, A. (2021). Fast homoepitaxial growth of (100) β-Ga₂O₃ thin films via MOVPE. AIP Advances, 11(11), 115323.
    Amari, H., Schulz, T., Baki, A., Stöver, J., Richter, C., Martin, J., Irmscher, K., Schwarzkopf, J., & Albrecht, M. (2021). In-situ TEM Observations of resistance switching in strontium titanate devices. Microscopy and Microanalysis, 27(S2), 69–70.
    Aggoune, W., & Draxl, C. (2021). Tuning two-dimensional electron and hole gases at LaInO₃/BaSnO₃ interfaces by polar distortions, termination, and thickness. Npj Computational Materials, 7(1), 174.
    Kröncke, H., Maudet, F., Banerjee, S., Albert, J., Wiesner, S., Deshpande, V., & Dubourdieu, C. (2021). Effect of O₂ plasma exposure time during atomic layer deposition of amorphous gallium oxide. Journal of Vacuum Science & Technology A, 39(5), 052408.
    Galazka, Z., Irmscher, K., Ganschow, S., Zupancic, M., Aggoune, W., Draxl, C., Albrecht, M., Klimm, D., Kwasniewski, A., Schulz, T., Pietsch, M., Dittmar, A., Grueneberg, R., Juda, U., Schewski, R., Bergmann, S., Cho, H., Char, K., Schroeder, T., & Bickermann, M. (2021). Melt growth and physical properties of bulk LaInO₃ single crystals. Physica Status Solidi (a), 218(16), 2100016.
    Grundmann, M., & Lorenz, M. (2021). Azimuthal anisotropy of rhombohedral (corundum phase) heterostructures. Physica Status Solidi (b), 258(7), 2100104.
    Grundmann, M., Stralka, T., Lorenz, M., Selle, S., Patzig, C., & Höche, T. (2021). Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)₂O₃ thin films on r-Plane Al₂O₃. Materials Advances, 2(13), 4316–4322.
    Aggoune, W., Irmscher, K., Nabok, D., Vona, C., Bin Anooz, S., Galazka, Z., Albrecht, M., & Draxl, C. (2021). Fingerprints of optical absorption in the perovskite LaInO₃ : Insight from many-body theory and experiment. Physical Review B, 103(11), 115105.
    Galazka, Z., Ganschow, S., Irmscher, K., Klimm, D., Albrecht, M., Schewski, R., Pietsch, M., Schulz, T., Dittmar, A., Kwasniewski, A., Grueneberg, R., Anooz, S. B., Popp, A., Juda, U., Hanke, I. M., Schroeder, T., & Bickermann, M. (2021). Bulk single crystals of β-Ga₂O₃ and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides. Progress in Crystal Growth and Characterization of Materials, 67(1), 100511.
    Kockert, M., Mitdank, R., Moon, H., Kim, J., Mogilatenko, A., Moosavi, S. H., Kroener, M., Woias, P., Lee, W., & Fischer, S. F. (2021). Semimetal to semiconductor transition in Bi/TiO₂ Core/Shell nanowires. Nanoscale Advances, 3(1), 263–271.
    Janzen, B. M., Mazzolini, P., Gillen, R., Peltason, V. F. S., Grote, L. P., Maultzsch, J., Fornari, R., Bierwagen, O., & Wagner, M. R. (2021). Comprehensive Raman study of orthorhombic κ/ϵ-Ga₂O₃ and the impact of rotational domains. Journal of Materials Chemistry C, 9(40), 14175–14189.
    Janzen, B. M., Mazzolini, P., Gillen, R., Falkenstein, A., Martin, M., Tornatzky, H., Maultzsch, J., Bierwagen, O., & Wagner, M. R. (2021). Isotopic study of Raman active phonon modes in β-Ga₂O₃. Journal of Materials Chemistry C, 9(7), 2311–2320.
    Böttcher, K., Miller, W., & Ganschow, S. (2021). Numerical modeling of heat transfer and thermal stress at the Czochralski growth of neodymium scandate single crystals. Crystal Research and Technology, 56(1), 2000106.
    Bin Anooz, S., Grüneberg, R., Chou, T.-S., Fiedler, A., Irmscher, K., Wouters, C., Schewski, R., Albrecht, M., Galazka, Z., Miller, W., Schwarzkopf, J., & Popp, A. (2021). Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE. Journal of Physics D: Applied Physics, 54(3), 034003.

    GraFOx Publications 2020

    Zupancic, M., Aggoune, W., Markurt, T., Kim, Y., Kim, Y. M., Char, K., Draxl, C., & Albrecht, M. (2020). Role of the interface in controlling the epitaxial relationship between orthorhombic LaInO₃ and cubic BaSnO₃. Physical Review Materials, 4(12), 123605.
    Wouters, C., Sutton, C., Ghiringhelli, L. M., Markurt, T., Schewski, R., Hassa, A., von Wenckstern, H., Grundmann, M., Scheffler, M., & Albrecht, M. (2020). Investigating the ranges of (Meta)Stable phase formation in (InₓGa₁₋ₓ)₂O₃ : Impact of the cation coordination. Physical Review Materials, 4(12), 125001.
    Niavol, S. S., Budde, M., Papadogianni, A., Heilmann, M., Moghaddam, H. M., Aldao, C. M., Ligorio, G., List-Kratochvil, E. J. W., Lopes, J. M. J., Barsan, N., Bierwagen, O., & Schipani, F. (2020). Conduction mechanisms in epitaxial NiO/Graphene gas sensors. Sensors and Actuators B: Chemical, 325, 128797.
    Knoop, F., Purcell, T., Scheffler, M., & Carbogno, C. (2020). FHI-vibes: Ab initio vibrational simulations. Journal of Open Source Software, 5(56), 2671.
    Kamimura, J., Budde, M., Bogdanoff, P., Tschammer, C., Abdi, F. F., van de Krol, R., Bierwagen, O., Riechert, H., & Geelhaar, L. (2020). Protection mechanism against photocorrosion of GaN photoanodes provided by NiO thin layers. Solar RRL, 4(12), 2000568.
    Grundmann, M., Stralka, T., & Lorenz, M. (2020). Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)₂O₃ thin films from pulsed laser deposition at 1000 °C on r-Plane Al2O3. Applied Physics Letters, 117(24), 242102.
    Budde, M., Mazzolini, P., Feldl, J., Golz, C., Nagata, T., Ueda, S., Hoffmann, G., Hatami, F., Masselink, W. T., Ramsteiner, M., & Bierwagen, O. (2020). Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass. Physical Review Materials, 4(12), 124602.
    Budde, M., Splith, D., Mazzolini, P., Tahraoui, A., Feldl, J., Ramsteiner, M., von Wenckstern, H., Grundmann, M., & Bierwagen, O. (2020). SnO/β-Ga₂O₃ pn heterojunction diodes. Applied Physics Letters, 117(25), 252106.
    Mazzolini, P., Falkenstein, A., Galazka, Z., Martin, M., & Bierwagen, O. (2020). Offcut-related step-flow and growth rate enhancement during (100) β-Ga₂O₃ homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE). Applied Physics Letters, 117(22), 222105.
    Fiedler, A., Ramsteiner, M., Galazka, Z., & Irmscher, K. (2020). Raman scattering in heavily donor doped β-Ga₂O₃. Applied Physics Letters, 117(15), 152107.
    Galazka, Z. (2020). Transparent semiconducting oxides: Bulk crystal growth and fundamental properties. Jenny Stanford Publishing.
    Papadogianni, A., Rombach, J., Berthold, T., Polyakov, V., Krischok, S., Himmerlich, M., & Bierwagen, O. (2020). Two-dimensional electron gas of the In₂O₃ surface : Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping. Physical Review B, 102(7), 075301.
    Knoop, F., Purcell, T. A. R., Scheffler, M., & Carbogno, C. (2020). Anharmonicity measure for materials. Physical Review Materials, 4(8), 083809.
    Mazzolini, P., & Bierwagen, O. (2020). Towards smooth (010) β-Ga₂O₃ films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio. Journal of Physics D: Applied Physics, 53(35), 354003.
    Zacharias, M., Scheffler, M., & Carbogno, C. (2020). Fully anharmonic nonperturbative theory of vibronically renormalized electronic band structures. Physical Review B, 102(4), 045126.
    Tillack, S., Gulans, A., & Draxl, C. (2020). Maximally localized Wannier functions within the (L)APW + LO Method. Physical Review B, 101(23), 235102.
    Boy, J., Handwerg, M., Mitdank, R., Galazka, Z., & Fischer, S. F. (2020). Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa₂O₄ single crystals. AIP Advances, 10(5), 055005.
    Bin Anooz, S., Grüneberg, R., Wouters, C., Schewski, R., Albrecht, M., Fiedler, A., Irmscher, K., Galazka, Z., Miller, W., Wagner, G., Schwarzkopf, J., & Popp, A. (2020). Step flow growth of β-Ga₂O₃ thin films on vicinal (100) β-Ga₂O₃ substrates grown by MOVPE. Applied Physics Letters, 116(18), 182106.
    Galazka, Z. (2020). Czochralski Method. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 15–36). Springer International Publishing.
    Bierwagen, O., Vogt, P., & Mazzolini, P. (2020). Plasma-assisted molecular beam epitaxy 2: Fundamentals of suboxide-related growth kinetics, thermodynamics, catalysis, polymorphs, and faceting. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 95–121). Springer International Publishing.
    Hoffmann, G., Budde, M., Mazzolini, P., & Bierwagen, O. (2020). Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga₂O. APL Materials, 8(3), 031110.
    Galazka, Z., Schewski, R., Irmscher, K., Drozdowski, W., Witkowski, M. E., Makowski, M., Wojtowicz, A. J., Hanke, I. M., Pietsch, M., Schulz, T., Klimm, D., Ganschow, S., Dittmar, A., Fiedler, A., Schroeder, T., & Bickermann, M. (2020). Bulk β-Ga₂O₃ single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiation. Journal of Alloys and Compounds, 818, 152842.
    Klimm, D., Guguschev, C., Ganschow, S., Bickermann, M., & Schlom, D. G. (2020). REScO₃ Substrates—Purveyors of Strain Engineering. Crystal Research and Technology, 55(2), 1900111.
    Ramsteiner, M., Feldl, J., & Galazka, Z. (2020). Signatures of free carriers in Raman spectra of cubic In₂O₃. Semiconductor Science and Technology, 35(1), 015017.
    Galazka, Z., Irmscher, K., Schewski, R., Hanke, I. M., Pietsch, M., Ganschow, S., Klimm, D., Dittmar, A., Fiedler, A., Schroeder, T., & Bickermann, M. (2020). Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono-, di-, tri-, and tetravalent ions. Journal of Crystal Growth, 529, 125297.
    Budde, M., Remmele, T., Tschammer, C., Feldl, J., Franz, P., Lähnemann, J., Cheng, Z., Hanke, M., Ramsteiner, M., Albrecht, M., & Bierwagen, O. (2020). Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1). Journal of Applied Physics, 127(1), 015306.
    Mazzolini, P., Falkenstein, A., Wouters, C., Schewski, R., Markurt, T., Galazka, Z., Martin, M., Albrecht, M., & Bierwagen, O. (2020). Substrate-orientation dependence of β-Ga₂O₃ (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE). APL Materials, 8(1), 011107.

    GraFOx Publications 2019

    Golz, C., Galazka, Z., Lähnemann, J., Hortelano, V., Hatami, F., Masselink, W. T., & Bierwagen, O. (2019). Electrical conductivity tensor of β-Ga₂O₃ analyzed by van der Pauw measurements: Inherent anisotropy, off-Diagonal element, and the impact of grain boundaries. Physical Review Materials, 3(12), 124604.
    Guguschev, C., Klimm, D., Brützam, M., Gesing, T. M., Gogolin, M., Paik, H., Dittmar, A., Fratello, V. J., & Schlom, D. G. (2019). Single crystal growth and characterization of Ba₂ScNbO₆ – A novel substrate for BaSnO₃ films. Journal of Crystal Growth, 528, 125263.
    Fiedler, A., Galazka, Z., & Irmscher, K. (2019). Electroluminescence of Cr 3+ and pseudo-Stark effect in β-Ga₂O₃ Schottky barrier diodes. Journal of Applied Physics, 126(21), 213104.
    Sutton, C., Ghiringhelli, L. M., Yamamoto, T., Lysogorskiy, Y., Blumenthal, L., Hammerschmidt, T., Golebiowski, J. R., Liu, X., Ziletti, A., & Scheffler, M. (2019). Crowd-sourcing materials-science challenges with the NOMAD 2018 Kaggle competition. Npj Computational Materials, 5(1), 111.
    Golz, C., Galazka, Z., Popp, A., Anooz, S. B., Wagner, G., Hatami, F., & Masselink, W. T. (2019). Deep-level noise characterization of MOVPE-grown β-Ga ₂O₃. Applied Physics Letters, 115(13), 133504.
    Ahrling, R., Boy, J., Handwerg, M., Chiatti, O., Mitdank, R., Wagner, G., Galazka, Z., & Fischer, S. F. (2019). Transport properties and finite size effects in β-Ga₂O₃ thin films. Scientific Reports, 9(1), 13149.
    Vorwerk, C., Aurich, B., Cocchi, C., & Draxl, C. (2019). Bethe–Salpeter equation for absorption and scattering spectroscopy: Implementation in the exciting code. Electronic Structure, 1(3), 037001.
    Bin Anooz, S., Popp, A., Grüneberg, R., Wouters, C., Schewski, R., Schmidbauer, M., Albrecht, M., Fiedler, A., Ramsteiner, M., Klimm, D., Irmscher, K., Galazka, Z., & Wagner, G. (2019). Indium incorporation in homoepitaxial β-Ga₂O₃ thin films grown by metal organic vapor phase epitaxy. Journal of Applied Physics, 125(19), 195702.
    Feneberg, M., Bläsing, J., Sekiyama, T., Ota, K., Akaiwa, K., Ichino, K., & Goldhahn, R. (2019). Anisotropic phonon properties and effective electron mass in α -Ga₂O₃. Applied Physics Letters, 114(14), 142102.
    Hidde, J., Guguschev, C., & Klimm, D. (2019). Thermal analysis and crystal growth of doped Nb₂O₅. Journal of Crystal Growth, 509, 60–65.
    Fiedler, A., Schewski, R., Galazka, Z., & Irmscher, K. (2019). Static dielectric constant of β-Ga₂O₃ perpendicular to the principal planes (100), (010), and (001). ECS Journal of Solid State Science and Technology, 8(7), Q3083–Q3085.
    Schewski, R., Lion, K., Fiedler, A., Wouters, C., Popp, A., Levchenko, S. V., Schulz, T., Schmidbauer, M., Bin Anooz, S., Grüneberg, R., Galazka, Z., Wagner, G., Irmscher, K., Scheffler, M., Draxl, C., & Albrecht, M. (2019). Step-flow growth in homoepitaxy of β-Ga₂O₃ (100)—The influence of the miscut direction and faceting. APL Materials, 7(2), 022515.
    Mazzolini, P., Vogt, P., Schewski, R., Wouters, C., Albrecht, M., & Bierwagen, O. (2019). Faceting and metal-exchange catalysis in (010) β-Ga₂O₃ thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy. APL Materials, 7(2), 022511.
    Galazka, Z., Ganschow, S., Schewski, R., Irmscher, K., Klimm, D., Kwasniewski, A., Pietsch, M., Fiedler, A., Schulze-Jonack, I., Albrecht, M., Schröder, T., & Bickermann, M. (2019). Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa₂O₄ single crystals. APL Materials, 7(2), 022512.
    Boy, J., Handwerg, M., Ahrling, R., Mitdank, R., Wagner, G., Galazka, Z., & Fischer, S. F. (2019). Temperature dependence of the Seebeck coefficient of epitaxial β-Ga₂O₃ thin films. APL Materials, 7(2), 022526.
    Bartel, C. J., Sutton, C., Goldsmith, B. R., Ouyang, R., Musgrave, C. B., Ghiringhelli, L. M., & Scheffler, M. (2019). New tolerance factor to predict the stability of perovskite oxides and halides. Science Advances, 5(2), eaav0693.
    Hirsch, T., Guguschev, C., Kwasniewski, A., Ganschow, S., & Klimm, D. (2019). Investigation of the Nd₂O₃ –Lu₂O₃ –Sc₂O₃ phase diagram for the preparation of perovskite-type mixed crystals NdLu₁₋ₓScₓO₃. Journal of Crystal Growth, 505, 38–43.

    GraFOx Publications 2018

    Vogt, P., & Bierwagen, O. (2018). Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga₂O₃, In₂O₃, and SnO₂. Physical Review Materials, 2(12), 120401.
    Galazka, Z. (2018). β-Ga₂O₃ for wide-bandgap electronics and optoelectronics. Semiconductor Science and Technology, 33(11), 113001.
    Boschker, J., Markurt, T., Albrecht, M., & Schwarzkopf, J. (2018). Heteroepitaxial growth of T-Nb₂O₅ on SrTiO₃. Nanomaterials, 8(11), 895.
    Cheng, Z., Hanke, M., Galazka, Z., & Trampert, A. (2018). Thermal expansion of single-crystalline β-Ga₂O₃ from RT to 1200 K studied by synchrotron-based high resolution x-Ray diffraction. Applied Physics Letters, 113(18), 182102.
    Cheng, Z., Hanke, M., Galazka, Z., & Trampert, A. (2018). Growth mode evolution during (100)-Oriented β-Ga₂O₃ homoepitaxy. Nanotechnology, 29(39), 395705.
    Thielert, B., Janowitz, C., Galazka, Z., & Mulazzi, M. (2018). Theoretical and experimental investigation of the electronic properties of the wide band-gap transparent semiconductor MgGa₂O₄. Physical Review B, 97(23), 235309.
    Budde, M., Tschammer, C., Franz, P., Feldl, J., Ramsteiner, M., Goldhahn, R., Feneberg, M., Barsan, N., Oprea, A., & Bierwagen, O. (2018). Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 123(19), 195301.
    Baldini, M., Galazka, Z., & Wagner, G. (2018). Recent progress in the growth of β-Ga₂O₃ for power electronics applications. Materials Science in Semiconductor Processing, 78, 132–146.
    Feneberg, M., Nixdorf, J., Neumann, M. D., Esser, N., Artús, L., Cuscó, R., Yamaguchi, T., & Goldhahn, R. (2018). Ordinary dielectric function of corundumlike α-Ga₂O₃ from 40 meV to 20 eV. Physical Review Materials, 2(4), 044601.
    Guguschev, C., Hidde, J., Gesing, T. M., Gogolin, M., & Klimm, D. (2018). Czochralski growth and characterization of TbₓGd₁₋ₓ ScO₃ and TbₓDy ₁₋ₓScO₃ solid-solution single crystals. CrystEngComm, 20(20), 2868–2876.
    Kokott, S., Levchenko, S. V., Rinke, P., & Scheffler, M. (2018). First-principles supercell calculations of small polarons with proper account for long-range polarization effects. New Journal of Physics, 20(3), 033023.
    Hidde, J., Guguschev, C., Ganschow, S., & Klimm, D. (2018). Thermal conductivity of rare-earth scandates in comparison to other oxidic substrate crystals. Journal of Alloys and Compounds, 738, 415–421.
    Galazka, Z., Ganschow, S., Fiedler, A., Bertram, R., Klimm, D., Irmscher, K., Schewski, R., Pietsch, M., Albrecht, M., & Bickermann, M. (2018). Doping of Czochralski-grown bulk β-Ga₂O₃ single crystals with Cr, Ce and Al. Journal of Crystal Growth, 486, 82–90.
    Bierwagen, O., & Galazka, Z. (2018). The inherent transport anisotropy of rutile tin dioxide (SnO₂ ) determined by van der Pauw measurements and its consequences for applications. Applied Physics Letters, 112(9), 092105.

    GraFOx Publications 2017

    Papadogianni, A., Kirste, L., & Bierwagen, O. (2017). Structural and electron transport properties of single-crystalline In₂O₃ films compensated by Ni acceptors. Applied Physics Letters, 111(26), 262103.
    Vogt, P., Brandt, O., Riechert, H., Lähnemann, J., & Bierwagen, O. (2017). Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors. Physical Review Letters, 119(19), 196001.
    Fiedler, A., Schewski, R., Baldini, M., Galazka, Z., Wagner, G., Albrecht, M., & Irmscher, K. (2017). Influence of incoherent twin boundaries on the electrical properties of β-Ga₂O₃ layers homoepitaxially grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 122(16), 165701.
    Cheng, Z., Hanke, M., Vogt, P., Bierwagen, O., & Trampert, A. (2017). Phase formation and strain relaxation of Ga₂O₃ on C-plane and a-Plane sapphire substrates as studied by synchrotron-based x-Ray diffraction. Applied Physics Letters, 111(16), 162104.
    Baldini, M., Albrecht, M., Fiedler, A., Irmscher, K., Schewski, R., & Wagner, G. (2017). Si- and Sn-doped homoepitaxial β-Ga ₂O₃ layers grown by MOVPE on (010)-Oriented substrates. ECS Journal of Solid State Science and Technology, 6(2), Q3040–Q3044.
    Galazka, Z., Uecker, R., Klimm, D., Irmscher, K., Naumann, M., Pietsch, M., Kwasniewski, A., Bertram, R., Ganschow, S., & Bickermann, M. (2017). Scaling-Up of Bulk β-Ga₂O₃ single crystals by the Czochralski method. ECS Journal of Solid State Science and Technology, 6(2), Q3007–Q3011.
    Guguschev, C., Kok, D. J., Juda, U., Uecker, R., Sintonen, S., Galazka, Z., & Bickermann, M. (2017). Top-seeded solution growth of SrTiO₃ single crystals virtually free of mosaicity. Journal of Crystal Growth, 468, 305–310.
    Klimm, D., Guguschev, C., Kok, D. J., Naumann, M., Ackermann, L., Rytz, D., Peltz, M., Dupré, K., Neumann, M. D., Kwasniewski, A., Schlom, D. G., & Bickermann, M. (2017). Crystal growth and characterization of the pyrochlore Tb₂Ti ₂O₇. CrystEngComm, 19(28), 3908–3914.
    Schmidbauer, M., Hanke, M., Kwasniewski, A., Braun, D., von Helden, L., Feldt, C., Leake, S. J., & Schwarzkopf, J. (2017). Scanning X-ray nanodiffraction from ferroelectric domains in strained K 0.75 Na 0.25 NbO₃ epitaxial films grown on (110) TbScO₃. Journal of Applied Crystallography, 50(2), 519–524.
    Vorwerk, C., Cocchi, C., & Draxl, C. (2017). Addressing electron-hole correlation in core excitations of solids: An all-electron many-body approach from first principles. Physical Review B, 95(15), 155121.
    Guguschev, C., Philippen, J., Kok, D. J., Markurt, T., Klimm, D., Hinrichs, K., Uecker, R., Bertram, R., & Bickermann, M. (2017). Czochralski growth and characterization of cerium doped calcium scandate. CrystEngComm, 19(18), 2553–2560.
    Galazka, Z., Uecker, R., Irmscher, K., Klimm, D., Bertram, R., Kwasniewski, A., Naumann, M., Schewski, R., Pietsch, M., Juda, U., Fiedler, A., Albrecht, M., Ganschow, S., Markurt, T., Guguschev, C., & Bickermann, M. (2017). Melt growth and properties of bulk BaSnO₃ single crystals. Journal of Physics: Condensed Matter, 29(7), 075701.
    Uecker, R., Bertram, R., Brützam, M., Galazka, Z., Gesing, T. M., Guguschev, C., Klimm, D., Klupsch, M., Kwasniewski, A., & Schlom, D. G. (2017). Large-lattice-parameter perovskite single-crystal substrates. Journal of Crystal Growth, 457, 137–142.
    Miller, W., Böttcher, K., Galazka, Z., & Schreuer, J. (2017). Numerical Modelling of the Czochralski Growth of β-Ga₂O₃. Crystals, 7(1), 26.

    GraFOx Publications 2016

    Schewski, R., Baldini, M., Irmscher, K., Fiedler, A., Markurt, T., Neuschulz, B., Remmele, T., Schulz, T., Wagner, G., Galazka, Z., & Albrecht, M. (2016). Evolution of planar defects during homoepitaxial growth of β-Ga₂O₃ layers on (100) substrates—A quantitative model. Journal of Applied Physics, 120(22), 225308.
    Handwerg, M., Mitdank, R., Galazka, Z., & Fischer, S. F. (2016). Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-GaO₃ single crystal along [100], [010] and [001]. Semiconductor Science and Technology, 31(12), 125006.
    Cocchi, C., Zschiesche, H., Nabok, D., Mogilatenko, A., Albrecht, M., Galazka, Z., Kirmse, H., Draxl, C., & Koch, C. T. (2016). Atomic signatures of local environment from core-level spectroscopy in β-Ga₂O₃. Physical Review B, 94(7), 075147.
    Vogt, P., & Bierwagen, O. (2016). Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)₂O₃. APL Materials, 4(8), 086112.
    Vogt, P., & Bierwagen, O. (2016). Comparison of the growth kinetics of In₂O₃ and Ga₂O₃ and their suboxide desorption during plasma-assisted molecular beam epitaxy. Applied Physics Letters, 109(6), 062103.

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