GraFOx Publications

    Egbo, K., Lähnemann, J., Falkenstein, A., Varley, J. B., & Bierwagen, O. (2023). Acceptor and compensating donor doping ofsingle crystalline SnO (001) films grown bymolecular beam epitaxy and its perspectives foroptoelectronics and gas-sensing. Applied Physics Letters, 122, 122101.
    Baki, A., Abdeldayem, M., Morales, C., Flege, J. I., Klimm, D., Bierwagen, O., & Schwarzkopf, J. (2023). Potential of La-Doped SrTiO3 Thin Films Grown by Metal–Organic Vapor Phase Epitaxy for Thermoelectric Applications. Crystal Growth & Design, 01438.
    Reis, A., Hanke, M., Bierwagen, O., Trampert, A., Mazzolini, P., & Welter, E. (2023). Disorder–order transition in Ga2O3 and its solid solution with In2O3 upon thermal annealing. Physica Status Solidi (b), 2200535.
    Egbo, K., Luna, E., Lähnemann, J., Hoffmann, G., Trampert, A., Grümbel, J., Kluth, E., Feneberg, M., Goldhahn, R., & Bierwagen, O. (2023). Epitaxial synthesis of unintentionally doped p−type SnO (001) via suboxide molecular beam epitaxy. Journal of Applied Physics, 133(4), 045701.
    Jaber, N., Feldl, J., Stoever, J., Irmscher, K., Albrecht, M., Ramsteiner, M., & Schwarzkopf, J. (2023). Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO2 films grown by pulsed-laser deposition. Physical Review Materials, 7(1), 014601.
    Vogt, S., Petersen, C., Kneiß, M., Splith, D., Schultz, T., von Wenckstern, H., Koch, N., & Grundmann, M. (2022). Realization of conductive n‐type doped α−Ga2O3 on m‐plane sapphire grown by a two‐step pulsed laser deposition process. Physica Status Solidi (a), 220(3), 2200721.
    Rehm, J., Chou, T.-S., Anooz, S. B., Seyidov, P., Fiedler, A., Galazka, Z., & Popp, A. (2022). Perspectives on MOVPE-grown (100) β−Ga2O3 thin films and its Al-alloy for power electronics application. Applied Physics Letters, 121(24).
    Seyidov, P., Varley, J. B., Galazka, Z., Chou, T.-S., Popp, A., Fiedler, A., & Irmscher, K. (2022). Cobalt as a promising dopant for producing semi-insulating β−Ga2O3crystals: Charge state transition levels from experiment and theory. APL Materials, 10(11).
    Pfuetzenreuter, D., Kim, S., Cho, H., Bierwagen, O., Zupancic, M., Albrecht, M., Char, K., & Schwarzkopf, J. (2022). Confinement of electrons at the LaInO3/BaSnO3 heterointerface. Advanced Materials Interfaces, 9, 2201279.
    Guimaraes, M. de O., Richter, C., Hanke, M., Anooz, S. B., Wang, Y., Schwarzkopf, J., & Schmidbauer, M. (2022). Ferroelectric phase transitions in tensile-strained NaNbO3 epitaxial films probed by in situ x-ray diffraction. Journal of Applied Physics, 132(15).
    Wang, Y., Bin Anooz, S., Niu, G., Schmidbauer, M., Wang, L., Ren, W., & Schwarzkopf, J. (2022). Thickness effect on ferroelectric domain formation in compressively strained K0.65Na0.35NbO3 epitaxial films. Physical Review Materials, 6(8).
    Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Miller, W., Tran, T. T. V., Rehm, J., Albrecht, M., & Popp, A. (2022). Machine learning supported analysis of MOVPE grown β−Ga2O3 thin films on sapphire. Journal of Crystal Growth, 592.
    Vorwerk, C., Sottile, F., & Draxl, C. (2022). All-electron many-body approach to resonant inelastic X-ray scattering. Physical Chemistry Chemical Physics, 24(29), 17439–17448.
    Ardenghi, A., Bierwagen, O., Falkenstein, A., Hoffmann, G., Lähnemann, J., Martin, M., & Mazzolini, P. (2022). Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β−Ga2O3. Applied Physics Letters, 121(4), 042109.
    Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Rehm, J., Tran, T. T. V., Irmscher, K., Seyidov, P., Miller, W., Galazka, Z., Albrecht, M., & Popp, A. (2022). Si doping mechanism in MOVPE-grown (100) β−Ga2O3 films. Applied Physics Letters, 121(3).
    Hamada, M., Ganschow, S., Klimm, D., Serghiou, G., Reichmann, H.-J., & Bickermann, M. (2022). Wüstite (Fe1-xO) - Thermodynamics and crystal growth. Zeitschrift Für Naturforschung B, 77(6), 463–468.
    Janzen, B. M., Gillen, R., Galazka, Z., Maultzsch, J., & Wagner, M. R. (2022). First- and second-order Raman spectroscopy of monoclinic β−Ga2O3. Physical Review Materials, 6(5).
    Bin Anooz, S., Wang, Y., Petrik, P., de Oliveira Guimaraes, M., Schmidbauer, M., & Schwarzkopf, J. (2022). High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain. Applied Physics Letters, 120(20).
    Klimm, D., Amgalan, B., Ganschow, S., Kwasniewski, A., Galazka, Z., & Bickermann, M. (2022). The thermal conductivity tensor of β−Ga2O3 from 300 to 1275 K. Crystal Research and Technology.
    Galazka, Z., Ganschow, S., Seyidov, P., Irmscher, K., Pietsch, M., Chou, T.-S., Bin Anooz, S., Grueneberg, R., Popp, A., Dittmar, A., Kwasniewski, A., Suendermann, M., Klimm, D., Straubinger, T., Schroeder, T., & Bickermann, M. (2022). Two inch diameter, highly conducting bulk β−Ga2O3 single crystals grown by the Czochralski method. Applied Physics Letters, 120(15), 152101.
    Guguschev, C., Richter, C., Brützam, M., Dadzis, K., Hirschle, C., Gesing, T. M., Schulze, M., Kwasniewski, A., Schreuer, J., & Schlom, D. G. (2022). Revisiting the growth of large (Mg,Zr):SrGa12O19 single crystals: Core formation and its impact on structural homogeneity revealed by correlative X-ray imaging. Crystal Growth & Design, 22(4), 2557–2568.
    Papadogianni, A., Nagata, T., & Bierwagen, O. (2022). The electrical conductivity of cubic (In1−xGax)2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer. Japanese Journal of Applied Physics, 61(4), 045502.
    Boy, J., Mitdank, R., Galazka, Z., & Fischer, S. F. (2022). Thermal conductivity, diffusivity and specific heat capacity of as-grown, degenerate single-crystalline ZnGa2O4. Materials Research Express.
    Tetzner, K., Egbo, K., Klupsch, M., Unger, R.-S., Popp, A., Chou, T.-S., Anooz, S. B., Galazka, Z., Trampert, A., Bierwagen, O., & Würfl, J. (2022). SnO/β−Ga2O3 heterojunction field-effect transistors and vertical p–n diodes. Applied Physics Letters, 120(11), 112110.
    Aggoune, W., Eljarrat, A., Nabok, D., Irmscher, K., Zupancic, M., Galazka, Z., Albrecht, M., Koch, C., & Draxl, C. (2022). A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment. Communications Materials, 3(1), 12.
    Grümbel, J., Goldhahn, R., Jeon, D.-W., & Feneberg, M. (2022). Anharmonicity of lattice vibrations in thin film α-Ga2O3 investigated by temperature dependent Raman spectroscopy. Applied Physics Letters, 120(2), 022104.
    Lion, K., Pavone, P., & Draxl, C. (2022). Elastic stability of Ga2O3 : Addressing the β to α phase transition from first principles. Physical Review Materials, 6(1), 013601.
    Chou, T.-S., Bin Anooz, S., Grüneberg, R., Irmscher, K., Dropka, N., Rehm, J., Tran, T. T. V., Miller, W., Seyidov, P., Albrecht, M., & Popp, A. (2021). Toward precise n-Type doping control in MOVPE-grown β−Ga2O3 thin films by deep-learning approach. Crystals, 12(1), 8.
    Kneiß, M., Splith, D., von Wenckstern, H., Lorenz, M., Schultz, T., Koch, N., & Grundmann, M. (2021). Strain states and relaxation for α-(AlxGa1-x)2O3  thin films on prismatic planes of alphaAl2O3in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt. Journal of Materials Research, 36(23), 4816–4831.
    Galazka, Z., Irmscher, K., Pietsch, M., Ganschow, S., Schulz, D., Klimm, D., Hanke, I. M., Schroeder, T., & Bickermann, M. (2021). Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides. Journal of Materials Research, 36(23), 4746–4755.
    Pfützenreuter, D., Zupancic, M., Galazka, Z., Schewski, R., Dittmar, A., Irmscher, K., Albrecht, M., & Schwarzkopf, J. (2021). Epitaxial BaSnO3 thin films with low dislocation density grown on lattice matched LaInO3 substrates. Nanotechnology, 32(50), 505609.
    Chou, T.-S., Seyidov, P., Bin Anooz, S., Grüneberg, R., Tran, T. T. V., Irmscher, K., Albrecht, M., Galazka, Z., Schwarzkopf, J., & Popp, A. (2021). Fast homoepitaxial growth of (100) β−Ga2O3 thin films via MOVPE. AIP Advances, 11(11), 115323.
    Hoffmann, G., Cheng, Z., Brandt, O., & Bierwagen, O. (2021). Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources. APL Materials, 9(11), 111110.
    Aggoune, W., Irmscher, K., Nabok, D., Vona, C., Bin Anooz, S., Galazka, Z., Albrecht, M., & Draxl, C. (2021). Fingerprints of optical absorption in the perovskite LaInO3 : Insight from many-body theory and experiment. Physical Review B, 103(11), 115105.
    Reichmann, F., Dabrowski, J., Becker, A. P., Klesse, W. M., Irmscher, K., Schewski, R., Galazka, Z., & Mulazzi, M. (2021). Experimental and theoretical investigation of the surface electronic structure of ZnGa2O4 (100) single‐crystals. Physica Status Solidi (b), 259(3), 2100452.
    Bin Anooz, S., Grüneberg, R., Chou, T.-S., Fiedler, A., Irmscher, K., Wouters, C., Schewski, R., Albrecht, M., Galazka, Z., Miller, W., Schwarzkopf, J., & Popp, A. (2021). Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β−Ga2O3 thin films grown by MOVPE. Journal of Physics D: Applied Physics, 54(3), 034003.
    Baki, A., Stöver, J., Schulz, T., Markurt, T., Amari, H., Richter, C., Martin, J., Irmscher, K., Albrecht, M., & Schwarzkopf, J. (2021). Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy. Scientific Reports, 11(1), 7497.
    Aggoune, W., & Draxl, C. (2021). Tuning two-dimensional electron and hole gases at LaInO3/BaSnO3 interfaces by polar distortions, termination, and thickness. Npj Computational Materials, 7(1), 174.
    Amari, H., Schulz, T., Baki, A., Stöver, J., Richter, C., Martin, J., Irmscher, K., Schwarzkopf, J., & Albrecht, M. (2021). In-situ TEM Observations of resistance switching in strontium titanate devices. Microscopy and Microanalysis, 27(S2), 69–70.
    Kröncke, H., Maudet, F., Banerjee, S., Albert, J., Wiesner, S., Deshpande, V., & Dubourdieu, C. (2021). Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide. Journal of Vacuum Science & Technology A, 39(5), 052408.
    Galazka, Z., Irmscher, K., Ganschow, S., Zupancic, M., Aggoune, W., Draxl, C., Albrecht, M., Klimm, D., Kwasniewski, A., Schulz, T., Pietsch, M., Dittmar, A., Grueneberg, R., Juda, U., Schewski, R., Bergmann, S., Cho, H., Char, K., Schroeder, T., & Bickermann, M. (2021). Melt growth and physical properties of bulk LaInO3 single crystals. Physica Status Solidi (a), 218(16), 2100016.
    Grundmann, M., & Lorenz, M. (2021). Azimuthal anisotropy of rhombohedral (corundum phase) heterostructures. Physica Status Solidi (b), 258(7), 2100104.
    Galazka, Z., Ganschow, S., Irmscher, K., Klimm, D., Albrecht, M., Schewski, R., Pietsch, M., Schulz, T., Dittmar, A., Kwasniewski, A., Grueneberg, R., Anooz, S. B., Popp, A., Juda, U., Hanke, I. M., Schroeder, T., & Bickermann, M. (2021). Bulk single crystals of β−Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides. Progress in Crystal Growth and Characterization of Materials, 67(1), 100511.
    Böttcher, K., Miller, W., & Ganschow, S. (2021). Numerical modeling of heat transfer and thermal stress at the Czochralski growth of neodymium scandate single crystals. Crystal Research and Technology, 56(1), 2000106.
    Janzen, B. M., Mazzolini, P., Gillen, R., Falkenstein, A., Martin, M., Tornatzky, H., Maultzsch, J., Bierwagen, O., & Wagner, M. R. (2021). Isotopic study of Raman active phonon modes in β−Ga2O3. Journal of Materials Chemistry C, 9(7), 2311–2320.
    Kockert, M., Mitdank, R., Moon, H., Kim, J., Mogilatenko, A., Moosavi, S. H., Kroener, M., Woias, P., Lee, W., & Fischer, S. F. (2021). Semimetal to semiconductor transition in Bi/TiO2 core/shell nanowires. Nanoscale Advances, 3(1), 263–271.
    Grundmann, M., Stralka, T., Lorenz, M., Selle, S., Patzig, C., & Höche, T. (2021). Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3. Materials Advances, 2(13), 4316–4322.
    Janzen, B. M., Mazzolini, P., Gillen, R., Peltason, V. F. S., Grote, L. P., Maultzsch, J., Fornari, R., Bierwagen, O., & Wagner, M. R. (2021). Comprehensive Raman study of orthorhombic κ/ε-Ga2O3  and the impact of rotational domains. Journal of Materials Chemistry C, 9(40), 14175–14189.
    Zupancic, M., Aggoune, W., Markurt, T., Kim, Y., Kim, Y. M., Char, K., Draxl, C., & Albrecht, M. (2020). Role of the interface in controlling the epitaxial relationship between orthorhombic LaInO3 and cubic BaSnO3. Physical Review Materials, 4(12), 123605.
    Budde, M., Splith, D., Mazzolini, P., Tahraoui, A., Feldl, J., Ramsteiner, M., von Wenckstern, H., Grundmann, M., & Bierwagen, O. (2020). SnO/β−Ga2O3 pn heterojunction diodes. Applied Physics Letters, 117(25), 252106.