GraFOx partners collaborate in research activities coordinated into four clusters: Cluster D: Devices, Cluster G: Growth & Surfaces, Cluster P: Physical Properties, and Cluster X: Exploratory Materials Research.
There are currently 35 GraFOx projects. Project IDs correspond to the project area of focus, which often spans more than one cluster.
Projects
| ID | Project Title | PI | Institution | Methods | Funding |
| P1 | Temperature dependence of band gaps and thermal transport | Prof. Matthias Scheffler | FHI | Ab-initio MD with anharmonicity | EU |
| P2X | Thermal and thermo-/electrical transport processes | Prof. Saskia Fischer | HUB | Thermal transport experiments | GraFOxII / DFG |
| P3 | Excitations in III2O3: impact of electron-vibrational coupling | Prof. Claudia Draxl | HUB | Ab-initio theory | HUB |
| P4X | Elementary optical excitations in oxides | Prof. Rüdiger Goldhahn, Prof. Martin Feneberg, Dr. Markus Wagner | UM, TUB | Spectroscopy, Ellipsometry / PLE | GraFOx II / TUB |
| P5 | Mapping electronic structure, potential, band bending at interfaces | Prof. Christoph T. Koch | HUB | TEM EELS + inline e-holography | GraFOx II |
| P6X | Analysis of phase diagrams and metastability of oxide solid solutions | Dr. Martin Albrecht | IKZ | In-situ TEM | GraFOx II |
| P7 | Structural and electronic properties of alloys and heterostructures | Dr. Manfred Ramsteiner | PDI | Micro Raman | GraFOx II |
| P8D | Ga2O3-based memristive devices | Deshpande, Dr. Catherine Dubourdieu | HZB | Processing, I(V) | GraFOx II |
| P9 | Point defects control in Ga2O3 thin films grown via molecular beam epitaxy | Dr. Markus Wagner | TUB | Raman scattering | DFG |
| P10 | BaSnO3 based heterostructures for electronic applications | Prof. Claudia Draxl | HUB | Ab-initio theory | Leibniz, HUB |
| P11 | BaSnO3 based heterostructures for electronic applications | Dr. Martin Albrecht | IKZ | TEM | Leibnitz |
| P12 | In-situ studies of memristors | Dr. Martin Albrecht | IKZ | In-situ TEM | Leibnitz |
| G2 | Unbiased determination of surface reconstructions | Prof. Matthias Scheffler, Prof. Claudia Draxl | FHI, HUB | MD | GraFOx II |
| G3P | In-situ XRD of strain, phase formation, and surface reconstructions | Dr. Michael Hanke | PDI | MBE + in-situ XRD + RHEED | GraFOx II |
| G4 | Ab initio study of the MBE growth of group-III oxides | Prof. Matthias Scheffler, Prof. Claudia Draxl | FHI, HUB | KMC + ab-initio parameters | FHI, HUB |
| G7 | Semiconducting or insulating amorphous and epitaxial Ga2O3 | Dr. Catherine Dubourdieu, Deshpande | HZB | ALD | GraFOx II |
| G8D | Growth of complex oxides for resistive switching | Dr. Jutta Schwarzkopf | IKZ | MOCVD | Leibniz |
| G11 | BaSnO3 based heterostructures for electronic applications | Dr. Oliver Bierwagen | PDI | MBE | Leibniz |
| G12 | BaSnO3 based heterostructures for electronic applications | Dr. Jutta Schwarzkopf | IKZ | MOCVD, PLD | Leibniz |
| G13 | Point defects control in Ga2O3 thin films grown via molecular beam epitaxy | Dr. Oliver Bierwagen, Dr. Piero Mazzolini | PDI | MBE | DFG |
| G 14 | Reproducible Gallium Oxide Bulk Growth + Wafering | Prof. Matthias Bickermann, Straubinger | IKZ | Czochralski | BMWi |
| G15 | Thermal transport in thin oxide layers | Dr. Andreas Popp | IKZ, HU | MOCVD | DFG |
| D1 | GoNext: Vertical Ga2O3-high voltage devices | Dr. Kornelius Tetzner, Würfl | FHB | Device processing and test | BMBF |
| D1G1 | GoNext: Bulk growth of highly Si-doped Ga2O3 | Prof. Matthias Bickermann | IKZ | Melt growth | BMBF |
| D1G2 | GoNext: Growth of thick Ga2O3 layers with low impurity concentr. | Dr. Andreas Popp | IKZ | MOVPE | BMBF |
| D1P | GoNext: Point defects and electrical transport | Klaus Irmscher, Dr. Andreas Fiedler | IKZ | DLTS, CV / IV, Hall | BMBF |
| D2P | Characterization of midgap trap states in alloys and heterostructures | Prof. W. Ted Masselink, Dr. Fariba Hatami | HUB | Deep level noise spectr. | GraFOx II |
| D3G | Dielectrics (HfO2, ZrO2, HfZrO, Ga2O3, Al2O3, …) for electronic devices | Dr. Catherine Dubourdieu, Deshpande | HZB | PE-ALD, Annealing | GraFOx II |
| D4 | Fabrication and characterization of UVC photo detectors | Dr. Holger von Wenckstern, Prof. Marius Grundmann | UL | Processing, I(V), spectr. | UL |
| D5 | Fundamentals of Metal Oxides as Chemoresistive Gas Sensors | Dr. Nicolae Barsan, Dr. Oliver Bierwagen | UT, PDI | In-operando I(V), IR spectr./MBE | DFG |
| X1 | Memristor Materials by Design | Dr. Martin Albrecht | IKZ, FHI, HUB | MOVPE, TEM, Theory | Leibniz |
| X2 | (Si,Ge,Sn)O2-based ultra-wide bandgap semiconductors for power electronics | Dr. Oliver Bierwagen | PDI, IKZ, FBH | Melt growth, MBE, TEM, CV / Hall, Device processing and test | Leibniz |
| G5X | Metastable III2O3 alloys, deep acceptor-doping, and p-type oxides | Dr. Oliver Bierwagen | PDI | MBE | GraFOx II |
| G6X | Combinatorial PLD of oxide solid solutions | Dr. Holger von Wenckstern, Prof. Marius Grundmann | UL | Combinatorial PLD | GraFOx II |
| G1X | Bulk Growth of TCOs and Complex Oxides | Prof. Matthias Bickermann | IKZ | Melt growth | GraFOx II |
