Co-authored Publications

Publications with GraFOx contribution

    Kamutzki, F., Bekheet, M. F., Selve, S., Kampmann, F., Siemensmeyer, K., Kober, D., Gillen, R., Wagner, M., Maultzsch, J., Gurlo, A., & Hanaor, D. A. H. (2023). NaGdSi2O6-A novel antiferromagnetically coupled silicate with Vierer chain structure. Journal of Solid State Chemistry, 317.
    Islam, A. E., Sepelak, N. P., Liddy, K. J., Kahler, R., Dryden, D. M., Williams, J., Lee, H., Gann, K., Popp, A., Leedy, K. D., Hendricks, N. S., Brown, Jeff. L., Heller, E. R., Wang, W., Zhu, W., Thompson, M. O., Chabak, K. D., & Green, A. J. (2022). 500 °C operation of β−Ga 2O3field-effect transistors. Applied Physics Letters, 121(24).
    Wang, Y., Wang, Q., Zhao, J., Niermann, T., Liu, Y., Dai, L., Zheng, K., Sun, Y., Zhang, Y., Schwarzkopf, J., Schroeder, T., Jiang, Z., Ren, W., & Niu, G. (2022). A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperature. Applied Materials Today, 29.
    Huang, Y., Wu, X., Schalch, J., Duan, G., Chen, C., Zhao, X., Kaj, K., Zhang, H.-T., Engel-Herbert, R., Averitt, R. D., & Zhang, X. (2022). Complementary vanadium dioxide metamaterial with enhanced modulation amplitude at terahertz frequencies. Physical Review Applied, 18(5).
    Brown, H. G., Pelz, P. M., Hsu, S.-L., Zhang, Z., Ramesh, R., Inzani, K., Sheridan, E., Griffin, S. M., Schloz, M., Pekin, T. C., Koch, C. T., Findlay, S. D., Allen, L. J., Scott, M. C., Ophus, C., & Ciston, J. (2022). A three-dimensional reconstruction algorithm for scanning transmission electron microscopy data from a single sample orientation. Microscopy and Microanalysis, 28(5), 1632–1640.
    Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Effect of post-metallization anneal on (100) Ga 2O3/Ti-Au ohmic contact performance and interfacial degradation. APL Materials, 10(9).
    Ratcliff, L. E., Oshima, T., Nippert, F., Janzen, B. M., Kluth, E., Goldhahn, R., Feneberg, M., Mazzolini, P., Bierwagen, O., Wouters, C., Nofal, M., Albrecht, M., Swallow, J. E. N., Jones, L. A. H., Thakur, P. K., Lee, T.-L., Kalha, C., Schlueter, C., Veal, T. D., … Regoutz, A. (2022). Tackling disorder in γ−Ga 2O3. Advanced Materials, 34(37).
    Ahn, G., Zingl, M., Noh, S. J., Brahlek, M., Roth, J. D., Engel-Herbert, R., Millis, A. J., & Moon, S. J. (2022). Low-energy interband transition in the infrared response of the correlated metal SrVO3 in the ultraclean limit. Physical Review B, 106(8).
    Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Exploiting the nanostructural anisotropy of β−Ga 2O3 to demonstrate giant improvement in titanium/gold ohmic contacts. ACS Nano, 16(8), 11988–11997.
    Cusco, R., Yamaguchi, T., Kluth, E., Goldhahn, R., & Feneberg, M. (2022). Optical properties of corundum-structured In2O3. Applied Physics Letters, 121(6).
    Bein, N., Kmet, B., Rojac, T., Golob, A. B., Malic, B., Moxter, J., Schneider, T., Fulanovic, L., Azadeh, M., Froemling, T., Egert, S., Wang, H., van Aken, P., Schwarzkopf, J., & Klein, A. (2022). Fermi energy, electrical conductivity, and the energy gap of NaNbO3. Physical Review Materials, 6(8).
    Ozsoy-Keskinbora, C., Van den Broek, W., Boothroyd, C. B., Dunin-Borkowski, R. E., van Aken, P. A., & Koch, C. T. (2022). Synergistic use of gradient flipping and phase prediction for inline electron holography. Scientific Reports, 12(1).
    Foppa, L., Purcell, T. A. R., Levchenko, S. V., Scheffler, M., & Ghringhelli, L. M. (2022). Hierarchical symbolic regression for identifying key physical parameters correlated with bulk properties of Perovskites. Physical Review Letters, 129(5).
    Mazzolini, P., Fogarassy, Z., Parisini, A., Mezzadri, F., Diercks, D., Bosi, M., Seravalli, L., Sacchi, A., Spaggiari, G., Bersani, D., Bierwagen, O., Janzen, B. M., Marggraf, M. N., Wagner, M. R., Cora, I., Pecz, B., Tahraoui, A., Bosio, A., Borelli, C., … Fornari, R. (2022). Silane-mediated expansion of domains in Si-doped kappa−Ga 2O3 epitaxy and its impact on the in-plane electronic conduction. Advanced Functional Materials.
    Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., & Esseni, D. (2022). Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation. IEEE Transactions on Electron Devices, 69(7), 3694–3699.
    Steigert, A., Kojda, D., Ibaceta-Jana, J., Abou-Ras, D., Gunder, R., Alktash, N., Habicht, K., Wagner, M. R., Klenk, R., Raoux, S., Szyszka, B., Lauermann, I., & Muydinov, R. (2022). Water-assisted crystallization of amorphous indium zinc oxide films. Materials Today Communications, 31.
    Dai, L., Zhao, J., Li, J., Chen, B., Zhai, S., Xue, Z., Di, Z., Feng, B., Sun, Y., Luo, Y., Ma, M., Zhang, J., Ding, S., Zhao, L., Jiang, Z., Luo, W., Quan, Y., Schwarzkopf, J., Schroeder, T., … Niu, G. (2022). Highly heterogeneous epitaxy of flexoelectric BaTiO3δ membrane on Ge. Nature Communications, 13(1).
    Hilfiker, M., Williams, E., Kilic, U., Traouli, Y., Koeppe, N., Rivera, J., Abakar, A., Stokey, M., Korlacki, R., Galazka, Z., Irmscher, K., & Schubert, M. (2022). Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4. Applied Physics Letters, 120(13), 132105.
    Xia, X., Al-Mamun, N. S., Fares, C., Haque, A., Ren, F., Hassa, A., von Wenckstern, H., Grundmann, M., & Pearton, S. J. (2022). Band Alignment of Al2O3 on α−(AlxGa1-x)2O3. ECS Journal of Solid State Science and Technology, 11(2), 025006.
    Green, A. J., Speck, J., Xing, G., Moens, P., Allerstam, F., Gumaelius, K., Neyer, T., Arias-Purdue, A., Mehrotra, V., Kuramata, A., Sasaki, K., Watanabe, S., Koshi, K., Blevins, J., Bierwagen, O., Krishnamoorthy, S., Leedy, K., Arehart, A. R., Neal, A. T., … Higashiwaki, M. (2022). β−Gallium oxide power electronics. APL Materials, 10(2), 029201.
    Gorelov, V., Reining, L., Feneberg, M., Goldhahn, R., Schleife, A., Lambrecht, W. R. L., & Gatti, M. (2022). Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2O5. Npj Computational Materials, 8(1), 94.
    Parisini, A., Mazzolini, P., Bierwagen, O., Borelli, C., Egbo, K., Sacchi, A., Bosi, M., Seravalli, L., Tahraoui, A., & Fornari, R. (2022). Study of SnO/ɛ−Ga2O3 pn diodes in planar geometry. Journal of Vacuum Science & Technology A, 40(4), 042701.
    Uhlendorf, J., Galazka, Z., & Schmidt, H. (2021). Oxygen diffusion in β−Ga 2O3 single crystals at high temperatures. Applied Physics Letters, 119(24), 242106.
    Rodenbücher, C., Guguschev, C., Korte, C., Bette, S., & Szot, K. (2021). Is reduced strontium titanate a semiconductor or a Metal? Crystals, 11(7), 744.
    Stokey, M., Korlacki, R., Knight, S., Ruder, A., Hilfiker, M., Galazka, Z., Irmscher, K., Zhang, Y., Zhao, H., Darakchieva, V., & Schubert, M. (2021). Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3. Journal of Applied Physics, 129(22), 225102.
    Xu, H., Wu, R., Zhang, J.-Y., Han, W., Chen, L., Liang, X., Haw, C. Y., Mazzolini, P., Bierwagen, O., Qi, D.-C., & Zhang, K. H. L. (2021). Revealing the electronic structure and optical properties of CuFeO2 as a p-type oxide semiconductor. ACS Applied Electronic Materials, 3(4), 1834–1841.
    Regmi, S., Li, Z., Srivastava, A., Mahat, R., Kc, S., Rastogi, A., Galazka, Z., Datta, R., Mewes, T., & Gupta, A. (2021). Structural and magnetic properties of NiFe2O4 thin films grown on isostructural lattice-matched substrates. Applied Physics Letters, 118(15), 152402.
    Windsor, Y. W., Zahn, D., Kamrla, R., Feldl, J., Seiler, H., Chiang, C.-T., Ramsteiner, M., Widdra, W., Ernstorfer, R., & Rettig, L. (2021). Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO. Physical Review Letters, 126(14), 147202.
    Hilfiker, M., Stokey, M., Korlacki, R., Kilic, U., Galazka, Z., Irmscher, K., Zollner, S., & Schubert, M. (2021). Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters. Applied Physics Letters, 118(13), 132102.
    Vogt, P., Hensling, F. V. E., Azizie, K., Chang, C. S., Turner, D., Park, J., McCandless, J. P., Paik, H., Bocklund, B. J., Hoffman, G., Bierwagen, O., Jena, D., Xing, H. G., Mou, S., Muller, D. A., Shang, S.-L., Liu, Z.-K., & Schlom, D. G. (2021). Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy. APL Materials, 9(3), 031101.
    Xu, L., Fauqué, B., Zhu, Z., Galazka, Z., Irmscher, K., & Behnia, K. (2021). Thermal conductivity of bulk In2O3 single crystals. Physical Review Materials, 5(1), 014603.
    Hirschle, C., Schreuer, J., Galazka, Z., & Ritter, C. (2021). On the relation of structural disorder and thermoelastic properties in ZnGa2O4 and Zn1−xMgxGa2O4 (x ≈ 0.33). Journal of Alloys and Compounds, 886, 161214.
    Lyle, L. A. M., Jiang, K., Favela, E. V., Das, K., Popp, A., Galazka, Z., Wagner, G., & Porter, L. M. (2021). Effect of metal contacts on (100) β−Ga 2O3 Schottky barriers. Journal of Vacuum Science & Technology A, 39(3), 033202.
    Zeuschner, S. P., Mattern, M., Pudell, J.-E., von Reppert, A., Rössle, M., Leitenberger, W., Schwarzkopf, J., Boschker, J. E., Herzog, M., & Bargheer, M. (2021). Reciprocal space slicing: A time-efficient approach to femtosecond x-ray diffraction. Structural Dynamics, 8(1), 014302.
    Gopalan, P., Knight, S., Chanana, A., Stokey, M., Ranga, P., Scarpulla, M. A., Krishnamoorthy, S., Darakchieva, V., Galazka, Z., Irmscher, K., Fiedler, A., Blair, S., Schubert, M., & Sensale-Rodriguez, B. (2020). The anisotropic quasi-static permittivity of single-crystal β −Ga2O3  measured by terahertz spectroscopy. Applied Physics Letters, 117(25), 252103.
    Swallow, J. E. N., Vorwerk, C., Mazzolini, P., Vogt, P., Bierwagen, O., Karg, A., Eickhoff, M., Schörmann, J., Wagner, M. R., Roberts, J. W., Chalker, P. R., Smiles, M. J., Murgatroyd, P., Razek, S. A., Lebens-Higgins, Z. W., Piper, L. F. J., Jones, L. A. H., Thakur, P. K., Lee, T.-L., … Regoutz, A. (2020). Influence of polymorphism on the electronic structure of Ga2O3. Chemistry of Materials, 32(19), 8460–8470.
    Stokey, M., Korlacki, R., Knight, S., Hilfiker, M., Galazka, Z., Irmscher, K., Darakchieva, V., & Schubert, M. (2020). Brillouin zone center phonon modes in ZnGa2O4. Applied Physics Letters, 117(5), 052104.
    Rastogi, A., Li, Z., Singh, A. V., Regmi, S., Peters, T., Bougiatioti, P., Carsten né Meier, D., Mohammadi, J. B., Khodadadi, B., Mewes, T., Mishra, R., Gazquez, J., Borisevich, A. Y., Galazka, Z., Uecker, R., Reiss, G., Kuschel, T., & Gupta, A. (2020). Enhancement in thermally generated spin voltage at the interfaces between Pd and NiFe2O4 films grown on lattice-matched substrates. Physical Review Applied, 14(1), 014014.
    Jovic, V., Moser, S., Papadogianni, A., Koch, R. J., Rossi, A., Jozwiak, C., Bostwick, A., Rotenberg, E., Kennedy, J. V., Bierwagen, O., & Smith, K. E. (2020). The itinerant 2D electron gas of the indium oxide (111) surface: Implications for carbon‐ and energy‐conversion applications. Small, 16(12), 1903321.
    Schubert, M., Mock, A., Korlacki, R., Knight, S., Monemar, B., Goto, K., Kumagai, Y., Kuramata, A., Galazka, Z., Wagner, G., Tadjer, M. J., Wheeler, V. D., Higashiwaki, M., & Darakchieva, V. (2020). Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry β−Ga 2O3. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 501–534). Springer International Publishing.
    Hirschle, C., Schreuer, J., Ganschow, S., & Schulze-Jonack, I. (2019). Thermoelastic properties of rare-earth scandates SmScO3 , TbScO3 and DyScO3. Journal of Applied Physics, 126(16), 165103.
    Simion, C. E., Schipani, F., Papadogianni, A., Stanoiu, A., Budde, M., Oprea, A., Weimar, U., Bierwagen, O., & Barsan, N. (2019). Conductance model for single-crystalline/compact metal oxide gas-sensing layers in the nondegenerate limit: Example of epitaxial SnO2 (101). ACS Sensors, 4(9), 2420–2428.
    Nagata, T., Bierwagen, O., Galazka, Z., Ueda, S., Imura, M., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals. Japanese Journal of Applied Physics, 58(8), 080903.
    Michel, J., Splith, D., Rombach, J., Papadogianni, A., Berthold, T., Krischok, S., Grundmann, M., Bierwagen, O., von Wenckstern, H., & Himmerlich, M. (2019). Processing strategies for high-performance Schottky contacts on n-type oxide semiconductors: Insights from In2O3. ACS Applied Materials & Interfaces, 11(30), 27073–27087.
    Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., Rana, J., Tellekamp, M. B., Boschker, J. E., Markurt, T., Swallow, J. E. N., Jones, L. A. H., Veal, T. D., Yang, W., Lee, T.-L., Rodolakis, F., Sadowski, J. T., Prendergast, D., Lee, W.-C., … Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2. Physical Review Materials, 3(7), 074602.
    Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal. Japanese Journal of Applied Physics, 58(SD), SDDG06.
    Grillo, A., Barrat, J., Galazka, Z., Passacantando, M., Giubileo, F., Iemmo, L., Luongo, G., Urban, F., Dubourdieu, C., & Di Bartolomeo, A. (2019). High field-emission current density from β−Ga 2O3  nanopillars. Applied Physics Letters, 114(19), 193101.
    Lee, W.-C., Wahila, M. J., Mukherjee, S., Singh, C. N., Eustance, T., Regoutz, A., Paik, H., Boschker, J. E., Rodolakis, F., Lee, T.-L., Schlom, D. G., & Piper, L. F. J. (2019). Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2. Journal of Applied Physics, 125(8), 082539.
    Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., Parisini, A., Bosi, M., & Fornari, R. (2019). The electronic structure of ε −Ga2O3. APL Materials, 7(2), 022522.
    Feneberg, M., Lidig, C., White, M. E., Tsai, M. Y., Speck, J. S., Bierwagen, O., Galazka, Z., & Goldhahn, R. (2019). Anisotropic optical properties of highly doped rutile SnO2 : Valence band contributions to the Burstein-Moss shift. APL Materials, 7(2), 022508.