Kamutzki, F., Bekheet, M. F., Selve, S., Kampmann, F., Siemensmeyer, K., Kober, D., Gillen, R., Wagner, M., Maultzsch, J., Gurlo, A., & Hanaor, D. A. H. (2023). NaGdSi₂O₆-A novel antiferromagnetically coupled silicate with Vierer chain structure. Journal of Solid State Chemistry, 317. https://doi.org/10.1016/j.jssc.2022.123677

Islam, A. E., Sepelak, N. P., Liddy, K. J., Kahler, R., Dryden, D. M., Williams, J., Lee, H., Gann, K., Popp, A., Leedy, K. D., Hendricks, N. S., Brown, Jeff. L., Heller, E. R., Wang, W., Zhu, W., Thompson, M. O., Chabak, K. D., & Green, A. J. (2022). 500 °C operation of β−Ga ₂O₃field-effect transistors. Applied Physics Letters, 121(24). https://doi.org/10.1063/5.0113744

Wang, Y., Wang, Q., Zhao, J., Niermann, T., Liu, Y., Dai, L., Zheng, K., Sun, Y., Zhang, Y., Schwarzkopf, J., Schroeder, T., Jiang, Z., Ren, W., & Niu, G. (2022). A robust high-performance electronic synapse based on epitaxial ferroelectric Hf_0.5Zr_0.5O₂ films with uniform polarization and high Curie temperature. Applied Materials Today, 29. https://doi.org/10.1016/j.apmt.2022.101587

Huang, Y., Wu, X., Schalch, J., Duan, G., Chen, C., Zhao, X., Kaj, K., Zhang, H.-T., Engel-Herbert, R., Averitt, R. D., & Zhang, X. (2022). Complementary vanadium dioxide metamaterial with enhanced modulation amplitude at terahertz frequencies. Physical Review Applied, 18(5). https://doi.org/10.1103/PhysRevApplied.18.054086

Brown, H. G., Pelz, P. M., Hsu, S.-L., Zhang, Z., Ramesh, R., Inzani, K., Sheridan, E., Griffin, S. M., Schloz, M., Pekin, T. C., Koch, C. T., Findlay, S. D., Allen, L. J., Scott, M. C., Ophus, C., & Ciston, J. (2022). A three-dimensional reconstruction algorithm for scanning transmission electron microscopy data from a single sample orientation. Microscopy and Microanalysis, 28(5), 1632–1640. https://doi.org/10.1017/S1431927622012090

Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Effect of post-metallization anneal on (100) Ga ₂O₃/Ti-Au ohmic contact performance and interfacial degradation. APL Materials, 10(9). https://doi.org/10.1063/5.0096245

Ratcliff, L. E., Oshima, T., Nippert, F., Janzen, B. M., Kluth, E., Goldhahn, R., Feneberg, M., Mazzolini, P., Bierwagen, O., Wouters, C., Nofal, M., Albrecht, M., Swallow, J. E. N., Jones, L. A. H., Thakur, P. K., Lee, T.-L., Kalha, C., Schlueter, C., Veal, T. D., … Regoutz, A. (2022). Tackling disorder in γ−Ga ₂O₃. Advanced Materials, 34(37). https://doi.org/10.1002/adma.202204217

Ahn, G., Zingl, M., Noh, S. J., Brahlek, M., Roth, J. D., Engel-Herbert, R., Millis, A. J., & Moon, S. J. (2022). Low-energy interband transition in the infrared response of the correlated metal SrVO₃ in the ultraclean limit. Physical Review B, 106(8). https://doi.org/10.1103/PhysRevB.106.085133

Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Exploiting the nanostructural anisotropy of β−Ga ₂O₃ to demonstrate giant improvement in titanium/gold ohmic contacts. ACS Nano, 16(8), 11988–11997. https://doi.org/10.1021/acsnano.2c01957

Cusco, R., Yamaguchi, T., Kluth, E., Goldhahn, R., & Feneberg, M. (2022). Optical properties of corundum-structured In₂O₃. Applied Physics Letters, 121(6). https://doi.org/10.1063/5.0096844

Bein, N., Kmet, B., Rojac, T., Golob, A. B., Malic, B., Moxter, J., Schneider, T., Fulanovic, L., Azadeh, M., Froemling, T., Egert, S., Wang, H., van Aken, P., Schwarzkopf, J., & Klein, A. (2022). Fermi energy, electrical conductivity, and the energy gap of NaNbO₃. Physical Review Materials, 6(8). https://doi.org/10.1103/PhysRevMaterials.6.084404

Ozsoy-Keskinbora, C., Van den Broek, W., Boothroyd, C. B., Dunin-Borkowski, R. E., van Aken, P. A., & Koch, C. T. (2022). Synergistic use of gradient flipping and phase prediction for inline electron holography. Scientific Reports, 12(1). https://doi.org/10.1038/s41598-022-17373-y

Foppa, L., Purcell, T. A. R., Levchenko, S. V., Scheffler, M., & Ghringhelli, L. M. (2022). Hierarchical symbolic regression for identifying key physical parameters correlated with bulk properties of Perovskites. Physical Review Letters, 129(5). https://doi.org/10.1103/PhysRevLett.129.055301

Mazzolini, P., Fogarassy, Z., Parisini, A., Mezzadri, F., Diercks, D., Bosi, M., Seravalli, L., Sacchi, A., Spaggiari, G., Bersani, D., Bierwagen, O., Janzen, B. M., Marggraf, M. N., Wagner, M. R., Cora, I., Pecz, B., Tahraoui, A., Bosio, A., Borelli, C., … Fornari, R. (2022). Silane-mediated expansion of domains in Si-doped kappa−Ga ₂O₃ epitaxy and its impact on the in-plane electronic conduction. Advanced Functional Materials. https://doi.org/10.1002/adfm.202207821

Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., & Esseni, D. (2022). Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation. IEEE Transactions on Electron Devices, 69(7), 3694–3699. https://doi.org/10.1109/TED.2022.3175684

Steigert, A., Kojda, D., Ibaceta-Jana, J., Abou-Ras, D., Gunder, R., Alktash, N., Habicht, K., Wagner, M. R., Klenk, R., Raoux, S., Szyszka, B., Lauermann, I., & Muydinov, R. (2022). Water-assisted crystallization of amorphous indium zinc oxide films. Materials Today Communications, 31. https://doi.org/10.1016/j.mtcomm.2022.103213

Dai, L., Zhao, J., Li, J., Chen, B., Zhai, S., Xue, Z., Di, Z., Feng, B., Sun, Y., Luo, Y., Ma, M., Zhang, J., Ding, S., Zhao, L., Jiang, Z., Luo, W., Quan, Y., Schwarzkopf, J., Schroeder, T., … Niu, G. (2022). Highly heterogeneous epitaxy of flexoelectric BaTiO₃−δ membrane on Ge. Nature Communications, 13(1). https://doi.org/10.1038/s41467-022-30724-7

Hilfiker, M., Williams, E., Kilic, U., Traouli, Y., Koeppe, N., Rivera, J., Abakar, A., Stokey, M., Korlacki, R., Galazka, Z., Irmscher, K., & Schubert, M. (2022). Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄. Applied Physics Letters, 120(13), 132105. https://doi.org/10.1063/5.0087623

Xia, X., Al-Mamun, N. S., Fares, C., Haque, A., Ren, F., Hassa, A., von Wenckstern, H., Grundmann, M., & Pearton, S. J. (2022). Band Alignment of Al₂O₃ on α−(Al_xGa_1-x)₂O₃. ECS Journal of Solid State Science and Technology, 11(2), 025006. https://doi.org/10.1149/2162-8777/ac546f

Green, A. J., Speck, J., Xing, G., Moens, P., Allerstam, F., Gumaelius, K., Neyer, T., Arias-Purdue, A., Mehrotra, V., Kuramata, A., Sasaki, K., Watanabe, S., Koshi, K., Blevins, J., Bierwagen, O., Krishnamoorthy, S., Leedy, K., Arehart, A. R., Neal, A. T., … Higashiwaki, M. (2022). β−Gallium oxide power electronics. APL Materials, 10(2), 029201. https://doi.org/10.1063/5.0060327

Gorelov, V., Reining, L., Feneberg, M., Goldhahn, R., Schleife, A., Lambrecht, W. R. L., & Gatti, M. (2022). Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅. Npj Computational Materials, 8(1), 94. https://doi.org/10.1038/s41524-022-00754-2

Parisini, A., Mazzolini, P., Bierwagen, O., Borelli, C., Egbo, K., Sacchi, A., Bosi, M., Seravalli, L., Tahraoui, A., & Fornari, R. (2022). Study of SnO/ɛ−Ga₂O₃ p–n diodes in planar geometry. Journal of Vacuum Science & Technology A, 40(4), 042701. https://doi.org/10.1116/6.0001857

Uhlendorf, J., Galazka, Z., & Schmidt, H. (2021). Oxygen diffusion in β−Ga ₂O₃ single crystals at high temperatures. Applied Physics Letters, 119(24), 242106. https://doi.org/10.1063/5.0071729

Rodenbücher, C., Guguschev, C., Korte, C., Bette, S., & Szot, K. (2021). Is reduced strontium titanate a semiconductor or a Metal? Crystals, 11(7), 744. https://doi.org/10.3390/cryst11070744

Stokey, M., Korlacki, R., Knight, S., Ruder, A., Hilfiker, M., Galazka, Z., Irmscher, K., Zhang, Y., Zhao, H., Darakchieva, V., & Schubert, M. (2021). Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In₂O₃. Journal of Applied Physics, 129(22), 225102. https://doi.org/10.1063/5.0052848

Xu, H., Wu, R., Zhang, J.-Y., Han, W., Chen, L., Liang, X., Haw, C. Y., Mazzolini, P., Bierwagen, O., Qi, D.-C., & Zhang, K. H. L. (2021). Revealing the electronic structure and optical properties of CuFeO₂ as a p-type oxide semiconductor. ACS Applied Electronic Materials, 3(4), 1834–1841. https://doi.org/10.1021/acsaelm.1c00090

Regmi, S., Li, Z., Srivastava, A., Mahat, R., Kc, S., Rastogi, A., Galazka, Z., Datta, R., Mewes, T., & Gupta, A. (2021). Structural and magnetic properties of NiFe₂O₄ thin films grown on isostructural lattice-matched substrates. Applied Physics Letters, 118(15), 152402. https://doi.org/10.1063/5.0047865

Windsor, Y. W., Zahn, D., Kamrla, R., Feldl, J., Seiler, H., Chiang, C.-T., Ramsteiner, M., Widdra, W., Ernstorfer, R., & Rettig, L. (2021). Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO. Physical Review Letters, 126(14), 147202. https://doi.org/10.1103/PhysRevLett.126.147202

Hilfiker, M., Stokey, M., Korlacki, R., Kilic, U., Galazka, Z., Irmscher, K., Zollner, S., & Schubert, M. (2021). Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters. Applied Physics Letters, 118(13), 132102. https://doi.org/10.1063/5.0043686

Vogt, P., Hensling, F. V. E., Azizie, K., Chang, C. S., Turner, D., Park, J., McCandless, J. P., Paik, H., Bocklund, B. J., Hoffman, G., Bierwagen, O., Jena, D., Xing, H. G., Mou, S., Muller, D. A., Shang, S.-L., Liu, Z.-K., & Schlom, D. G. (2021). Adsorption-controlled growth of Ga₂O₃ by suboxide molecular-beam epitaxy. APL Materials, 9(3), 031101. https://doi.org/10.1063/5.0035469

Xu, L., Fauqué, B., Zhu, Z., Galazka, Z., Irmscher, K., & Behnia, K. (2021). Thermal conductivity of bulk In₂O₃ single crystals. Physical Review Materials, 5(1), 014603. https://doi.org/10.1103/PhysRevMaterials.5.014603

Hirschle, C., Schreuer, J., Galazka, Z., & Ritter, C. (2021). On the relation of structural disorder and thermoelastic properties in ZnGa₂O₄ and Zn_1−xMg_xGa₂O₄ (x ≈ 0.33). Journal of Alloys and Compounds, 886, 161214. https://doi.org/10.1016/j.jallcom.2021.161214

Lyle, L. A. M., Jiang, K., Favela, E. V., Das, K., Popp, A., Galazka, Z., Wagner, G., & Porter, L. M. (2021). Effect of metal contacts on (100) β−Ga ₂O₃ Schottky barriers. Journal of Vacuum Science & Technology A, 39(3), 033202. https://doi.org/10.1116/6.0000877

Zeuschner, S. P., Mattern, M., Pudell, J.-E., von Reppert, A., Rössle, M., Leitenberger, W., Schwarzkopf, J., Boschker, J. E., Herzog, M., & Bargheer, M. (2021). Reciprocal space slicing: A time-efficient approach to femtosecond x-ray diffraction. Structural Dynamics, 8(1), 014302. https://doi.org/10.1063/4.0000040

Gopalan, P., Knight, S., Chanana, A., Stokey, M., Ranga, P., Scarpulla, M. A., Krishnamoorthy, S., Darakchieva, V., Galazka, Z., Irmscher, K., Fiedler, A., Blair, S., Schubert, M., & Sensale-Rodriguez, B. (2020). The anisotropic quasi-static permittivity of single-crystal β −Ga₂O₃  measured by terahertz spectroscopy. Applied Physics Letters, 117(25), 252103. https://doi.org/10.1063/5.0031464

Swallow, J. E. N., Vorwerk, C., Mazzolini, P., Vogt, P., Bierwagen, O., Karg, A., Eickhoff, M., Schörmann, J., Wagner, M. R., Roberts, J. W., Chalker, P. R., Smiles, M. J., Murgatroyd, P., Razek, S. A., Lebens-Higgins, Z. W., Piper, L. F. J., Jones, L. A. H., Thakur, P. K., Lee, T.-L., … Regoutz, A. (2020). Influence of polymorphism on the electronic structure of Ga₂O₃. Chemistry of Materials, 32(19), 8460–8470. https://doi.org/10.1021/acs.chemmater.0c02465

Stokey, M., Korlacki, R., Knight, S., Hilfiker, M., Galazka, Z., Irmscher, K., Darakchieva, V., & Schubert, M. (2020). Brillouin zone center phonon modes in ZnGa₂O₄. Applied Physics Letters, 117(5), 052104. https://doi.org/10.1063/5.0012526

Rastogi, A., Li, Z., Singh, A. V., Regmi, S., Peters, T., Bougiatioti, P., Carsten né Meier, D., Mohammadi, J. B., Khodadadi, B., Mewes, T., Mishra, R., Gazquez, J., Borisevich, A. Y., Galazka, Z., Uecker, R., Reiss, G., Kuschel, T., & Gupta, A. (2020). Enhancement in thermally generated spin voltage at the interfaces between Pd and NiFe₂O₄ films grown on lattice-matched substrates. Physical Review Applied, 14(1), 014014. https://doi.org/10.1103/PhysRevApplied.14.014014

Jovic, V., Moser, S., Papadogianni, A., Koch, R. J., Rossi, A., Jozwiak, C., Bostwick, A., Rotenberg, E., Kennedy, J. V., Bierwagen, O., & Smith, K. E. (2020). The itinerant 2D electron gas of the indium oxide (111) surface: Implications for carbon‐ and energy‐conversion applications. Small, 16(12), 1903321. https://doi.org/10.1002/smll.201903321

Schubert, M., Mock, A., Korlacki, R., Knight, S., Monemar, B., Goto, K., Kumagai, Y., Kuramata, A., Galazka, Z., Wagner, G., Tadjer, M. J., Wheeler, V. D., Higashiwaki, M., & Darakchieva, V. (2020). Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry β−Ga ₂O₃. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 501–534). Springer International Publishing. https://doi.org/10.1007/978-3-030-37153-1_28

Hirschle, C., Schreuer, J., Ganschow, S., & Schulze-Jonack, I. (2019). Thermoelastic properties of rare-earth scandates SmScO₃ , TbScO₃ and DyScO₃. Journal of Applied Physics, 126(16), 165103. https://doi.org/10.1063/1.5108584

Simion, C. E., Schipani, F., Papadogianni, A., Stanoiu, A., Budde, M., Oprea, A., Weimar, U., Bierwagen, O., & Barsan, N. (2019). Conductance model for single-crystalline/compact metal oxide gas-sensing layers in the nondegenerate limit: Example of epitaxial SnO₂ (101). ACS Sensors, 4(9), 2420–2428. https://doi.org/10.1021/acssensors.9b01018

Nagata, T., Bierwagen, O., Galazka, Z., Ueda, S., Imura, M., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study on electronic state and electrical properties of SnO₂ single crystals. Japanese Journal of Applied Physics, 58(8), 080903. https://doi.org/10.7567/1347-4065/ab2c1e

Michel, J., Splith, D., Rombach, J., Papadogianni, A., Berthold, T., Krischok, S., Grundmann, M., Bierwagen, O., von Wenckstern, H., & Himmerlich, M. (2019). Processing strategies for high-performance Schottky contacts on n-type oxide semiconductors: Insights from In₂O₃. ACS Applied Materials & Interfaces, 11(30), 27073–27087. https://doi.org/10.1021/acsami.9b06455

Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., Rana, J., Tellekamp, M. B., Boschker, J. E., Markurt, T., Swallow, J. E. N., Jones, L. A. H., Veal, T. D., Yang, W., Lee, T.-L., Rodolakis, F., Sadowski, J. T., Prendergast, D., Lee, W.-C., … Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO₂. Physical Review Materials, 3(7), 074602. https://doi.org/10.1103/PhysRevMaterials.3.074602

Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In₂O₃ (111) single crystal. Japanese Journal of Applied Physics, 58(SD), SDDG06. https://doi.org/10.7567/1347-4065/ab0ff0

Grillo, A., Barrat, J., Galazka, Z., Passacantando, M., Giubileo, F., Iemmo, L., Luongo, G., Urban, F., Dubourdieu, C., & Di Bartolomeo, A. (2019). High field-emission current density from β−Ga ₂O₃  nanopillars. Applied Physics Letters, 114(19), 193101. https://doi.org/10.1063/1.5096596

Lee, W.-C., Wahila, M. J., Mukherjee, S., Singh, C. N., Eustance, T., Regoutz, A., Paik, H., Boschker, J. E., Rodolakis, F., Lee, T.-L., Schlom, D. G., & Piper, L. F. J. (2019). Cooperative effects of strain and electron correlation in epitaxial VO₂ and NbO₂. Journal of Applied Physics, 125(8), 082539. https://doi.org/10.1063/1.5052636

Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., Parisini, A., Bosi, M., & Fornari, R. (2019). The electronic structure of ε −Ga₂O₃. APL Materials, 7(2), 022522. https://doi.org/10.1063/1.5054395

Feneberg, M., Lidig, C., White, M. E., Tsai, M. Y., Speck, J. S., Bierwagen, O., Galazka, Z., & Goldhahn, R. (2019). Anisotropic optical properties of highly doped rutile SnO₂ : Valence band contributions to the Burstein-Moss shift. APL Materials, 7(2), 022508. https://doi.org/10.1063/1.5054351