Co-authored Publications

    Publications with GraFOx contribution 2023

    Rajabi Kalvani, P., Parisini, A., Sozzi, G., Borelli, C., Mazzolini, P., Bierwagen, O., Vantaggio, S., Egbo, K., Bosi, M., Seravalli, L., & Fornari, R. (2023). Interfacial Properties of the SnO/κ-Ga₂O₃ p-n Heterojunction A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga₂O₃. ACS Applied Materials & Interfaces, acsami.3c08841.
    Langørgen, A., Kalmann Frodason, Y., Karsthof, R., von Wenckstern, H., Thue Jensen, I. J., Vines, L., & Grundmann, M. (2023). Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy. Journal of Applied Physics, 134(1), 015701.
    Wang, R., Schultz, T., Papadogianni, A., Longhi, E., Gatsios, C., Zu, F., Zhai, T., Barlow, S., Marder, S. R., Bierwagen, O., Amsalem, P., & Koch, N. (2023). Tuning the surface electron accumulation layer of In₂O₃ by adsorption of molecular electron donors and acceptors. Small, 2300730.

    Publications with GraFOx contribution 2022

    Wang, Y., Wang, Q., Zhao, J., Niermann, T., Liu, Y., Dai, L., Zheng, K., Sun, Y., Zhang, Y., Schwarzkopf, J., Schroeder, T., Jiang, Z., Ren, W., & Niu, G. (2022). A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O₂ films with uniform polarization and high Curie temperature. Applied Materials Today, 29, 101587.
    Islam, A. E., Sepelak, N. P., Liddy, K. J., Kahler, R., Dryden, D. M., Williams, J., Lee, H., Gann, K., Popp, A., Leedy, K. D., Hendricks, N. S., Brown, Jeff. L., Heller, E. R., Wang, W., Zhu, W., Thompson, M. O., Chabak, K. D., & Green, A. J. (2022). 500 °C operation of β-Ga ₂O₃field-Effect transistors. Applied Physics Letters, 121(24), 243501.
    Gorelov, V., Reining, L., Feneberg, M., Goldhahn, R., Schleife, A., Lambrecht, W. R. L., & Gatti, M. (2022). Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅. Npj Computational Materials, 8(1), 94.
    Mazzolini, P., Fogarassy, Z., Parisini, A., Mezzadri, F., Diercks, D., Bosi, M., Seravalli, L., Sacchi, A., Spaggiari, G., Bersani, D., Bierwagen, O., Janzen, B. M., Marggraf, M. N., Wagner, M. R., Cora, I., Pecz, B., Tahraoui, A., Bosio, A., Borelli, C., … Fornari, R. (2022). Silane-mediated expansion of domains in Si-doped kappa-Ga ₂O₃ epitaxy and its impact on the in-Plane electronic conduction. Advanced Functional Materials, 2207821.
    Huang, Y., Wu, X., Schalch, J., Duan, G., Chen, C., Zhao, X., Kaj, K., Zhang, H.-T., Engel-Herbert, R., Averitt, R. D., & Zhang, X. (2022). Complementary vanadium dioxide metamaterial with enhanced modulation amplitude at terahertz frequencies. Physical Review Applied, 18(5), 054086.
    Kamutzki, F., Bekheet, M. F., Selve, S., Kampmann, F., Siemensmeyer, K., Kober, D., Gillen, R., Wagner, M., Maultzsch, J., Gurlo, A., & Hanaor, D. A. H. (2022). NaGdSi₂O₆-A novel antiferromagnetically coupled silicate with Vierer chain structure. Journal of Solid State Chemistry, 317, 123677.
    Brown, H. G., Pelz, P. M., Hsu, S.-L., Zhang, Z., Ramesh, R., Inzani, K., Sheridan, E., Griffin, S. M., Schloz, M., Pekin, T. C., Koch, C. T., Findlay, S. D., Allen, L. J., Scott, M. C., Ophus, C., & Ciston, J. (2022). A three-dimensional reconstruction algorithm for scanning transmission electron microscopy data from a single sample orientation. Microscopy and Microanalysis, 28(5), 1632–1640.
    Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Effect of post-metallization anneal on (100) Ga ₂O₃/Ti-Au ohmic contact performance and interfacial degradation. APL Materials, 10(9), 091105.
    Ozsoy-Keskinbora, C., Van den Broek, W., Boothroyd, C. B., Dunin-Borkowski, R. E., van Aken, P. A., & Koch, C. T. (2022). Synergistic use of gradient flipping and phase prediction for inline electron holography. Scientific Reports, 12(1), 13294.
    Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Exploiting the nanostructural anisotropy of β-Ga ₂O₃ to demonstrate giant improvement in Titanium/Gold ohmic contacts. ACS Nano, 16(8), 11988–11997.
    Cusco, R., Yamaguchi, T., Kluth, E., Goldhahn, R., & Feneberg, M. (2022). Optical properties of corundum-structured In₂O₃. Applied Physics Letters, 121(6), 062106.
    Bein, N., Kmet, B., Rojac, T., Golob, A. B., Malic, B., Moxter, J., Schneider, T., Fulanovic, L., Azadeh, M., Froemling, T., Egert, S., Wang, H., van Aken, P., Schwarzkopf, J., & Klein, A. (2022). Fermi energy, electrical conductivity, and the energy gap of NaNbO₃. Physical Review Materials, 6(8), 084404.
    Ahn, G., Zingl, M., Noh, S. J., Brahlek, M., Roth, J. D., Engel-Herbert, R., Millis, A. J., & Moon, S. J. (2022). Low-energy interband transition in the infrared response of the correlated metal SrVO₃ in the ultraclean limit. Physical Review B, 106(8), 085133.
    Ratcliff, L. E., Oshima, T., Nippert, F., Janzen, B. M., Kluth, E., Goldhahn, R., Feneberg, M., Mazzolini, P., Bierwagen, O., Wouters, C., Nofal, M., Albrecht, M., Swallow, J. E. N., Jones, L. A. H., Thakur, P. K., Lee, T.-L., Kalha, C., Schlueter, C., Veal, T. D., … Regoutz, A. (2022). Tackling disorder in γ-Ga ₂O₃. Advanced Materials, 34(37), 2204217.
    Foppa, L., Purcell, T. A. R., Levchenko, S. V., Scheffler, M., & Ghringhelli, L. M. (2022). Hierarchical symbolic regression for identifying key physical parameters correlated with bulk properties of Perovskites. Physical Review Letters, 129(5), 055301.
    Parisini, A., Mazzolini, P., Bierwagen, O., Borelli, C., Egbo, K., Sacchi, A., Bosi, M., Seravalli, L., Tahraoui, A., & Fornari, R. (2022). Study of SnO/ɛ-Ga₂O₃ pn diodes in planar geometry. Journal of Vacuum Science & Technology A, 40(4), 042701.
    Steigert, A., Kojda, D., Ibaceta-Jana, J., Abou-Ras, D., Gunder, R., Alktash, N., Habicht, K., Wagner, M. R., Klenk, R., Raoux, S., Szyszka, B., Lauermann, I., & Muydinov, R. (2022). Water-assisted crystallization of amorphous indium zinc oxide films. Materials Today Communications, 31, 103213.
    Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., & Esseni, D. (2022). Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation. IEEE Transactions on Electron Devices, 69(7), 3694–3699.
    Dai, L., Zhao, J., Li, J., Chen, B., Zhai, S., Xue, Z., Di, Z., Feng, B., Sun, Y., Luo, Y., Ma, M., Zhang, J., Ding, S., Zhao, L., Jiang, Z., Luo, W., Quan, Y., Schwarzkopf, J., Schroeder, T., … Niu, G. (2022). Highly heterogeneous epitaxy of flexoelectric BaTiO₃-δ membrane on Ge. Nature Communications, 13(1), 2990.
    Hilfiker, M., Williams, E., Kilic, U., Traouli, Y., Koeppe, N., Rivera, J., Abakar, A., Stokey, M., Korlacki, R., Galazka, Z., Irmscher, K., & Schubert, M. (2022). Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄. Applied Physics Letters, 120(13), 132105.
    Xia, X., Al-Mamun, N. S., Fares, C., Haque, A., Ren, F., Hassa, A., von Wenckstern, H., Grundmann, M., & Pearton, S. J. (2022). Band Alignment of Al₂O₃ on A-(AlₓGa₁₋ₓ)₂O₃. ECS Journal of Solid State Science and Technology, 11(2), 025006.
    Green, A. J., Speck, J., Xing, G., Moens, P., Allerstam, F., Gumaelius, K., Neyer, T., Arias-Purdue, A., Mehrotra, V., Kuramata, A., Sasaki, K., Watanabe, S., Koshi, K., Blevins, J., Bierwagen, O., Krishnamoorthy, S., Leedy, K., Arehart, A. R., Neal, A. T., … Higashiwaki, M. (2022). β-Gallium oxide power electronics. APL Materials, 10(2), 029201.

    Publications with GraFOx contribution 2021

    Hirschle, C., Schreuer, J., Galazka, Z., & Ritter, C. (2021). On the relation of structural disorder and thermoelastic properties in ZnGa₂O₄ and Zn₁₋ₓMgₓGa₂O₄ (x ≈ 0.33). Journal of Alloys and Compounds, 886, 161214.
    Uhlendorf, J., Galazka, Z., & Schmidt, H. (2021). Oxygen diffusion in β-Ga ₂O₃ single crystals at high temperatures. Applied Physics Letters, 119(24), 242106.
    Stokey, M., Korlacki, R., Knight, S., Ruder, A., Hilfiker, M., Galazka, Z., Irmscher, K., Zhang, Y., Zhao, H., Darakchieva, V., & Schubert, M. (2021). Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In₂O₃. Journal of Applied Physics, 129(22), 225102.
    Rodenbücher, C., Guguschev, C., Korte, C., Bette, S., & Szot, K. (2021). Is reduced strontium titanate a semiconductor or a Metal? Crystals, 11(7), 744.
    Xu, H., Wu, R., Zhang, J.-Y., Han, W., Chen, L., Liang, X., Haw, C. Y., Mazzolini, P., Bierwagen, O., Qi, D.-C., & Zhang, K. H. L. (2021). Revealing the electronic structure and optical properties of CuFeO₂ as a P-type oxide semiconductor. ACS Applied Electronic Materials, 3(4), 1834–1841.
    Windsor, Y. W., Zahn, D., Kamrla, R., Feldl, J., Seiler, H., Chiang, C.-T., Ramsteiner, M., Widdra, W., Ernstorfer, R., & Rettig, L. (2021). Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO. Physical Review Letters, 126(14), 147202.
    Regmi, S., Li, Z., Srivastava, A., Mahat, R., Kc, S., Rastogi, A., Galazka, Z., Datta, R., Mewes, T., & Gupta, A. (2021). Structural and magnetic properties of NiFe₂O₄ thin films grown on isostructural lattice-matched substrates. Applied Physics Letters, 118(15), 152402.
    Lyle, L. A. M., Jiang, K., Favela, E. V., Das, K., Popp, A., Galazka, Z., Wagner, G., & Porter, L. M. (2021). Effect of metal contacts on (100) β-Ga ₂O₃ Schottky barriers. Journal of Vacuum Science & Technology A, 39(3), 033202.
    Hilfiker, M., Stokey, M., Korlacki, R., Kilic, U., Galazka, Z., Irmscher, K., Zollner, S., & Schubert, M. (2021). Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters. Applied Physics Letters, 118(13), 132102.
    Vogt, P., Hensling, F. V. E., Azizie, K., Chang, C. S., Turner, D., Park, J., McCandless, J. P., Paik, H., Bocklund, B. J., Hoffman, G., Bierwagen, O., Jena, D., Xing, H. G., Mou, S., Muller, D. A., Shang, S.-L., Liu, Z.-K., & Schlom, D. G. (2021). Adsorption-controlled growth of Ga₂O₃ by suboxide molecular-beam epitaxy. APL Materials, 9(3), 031101.
    Zeuschner, S. P., Mattern, M., Pudell, J.-E., von Reppert, A., Rössle, M., Leitenberger, W., Schwarzkopf, J., Boschker, J. E., Herzog, M., & Bargheer, M. (2021). Reciprocal space slicing: A time-efficient approach to femtosecond x-Ray diffraction. Structural Dynamics, 8(1), 014302.
    Xu, L., Fauqué, B., Zhu, Z., Galazka, Z., Irmscher, K., & Behnia, K. (2021). Thermal conductivity of bulk In₂O₃ single crystals. Physical Review Materials, 5(1), 014603.

    Publications with GraFOx contribution 2020

    Gopalan, P., Knight, S., Chanana, A., Stokey, M., Ranga, P., Scarpulla, M. A., Krishnamoorthy, S., Darakchieva, V., Galazka, Z., Irmscher, K., Fiedler, A., Blair, S., Schubert, M., & Sensale-Rodriguez, B. (2020). The anisotropic quasi-static permittivity of single-crystal β -Ga₂O₃ measured by terahertz spectroscopy. Applied Physics Letters, 117(25), 252103.
    Jovic, V., Moser, S., Papadogianni, A., Koch, R. J., Rossi, A., Jozwiak, C., Bostwick, A., Rotenberg, E., Kennedy, J. V., Bierwagen, O., & Smith, K. E. (2020). The itinerant 2D electron gas of the indium oxide (111) surface: Implications for carbon- and energy-conversion applications. Small (Weinheim an Der Bergstrasse, Germany), 16(12), 1903321.
    Stokey, M., Korlacki, R., Knight, S., Hilfiker, M., Galazka, Z., Irmscher, K., Darakchieva, V., & Schubert, M. (2020). Brillouin zone center phonon modes in ZnGa₂O₄. Applied Physics Letters, 117(5), 052104.
    Rastogi, A., Li, Z., Singh, A. V., Regmi, S., Peters, T., Bougiatioti, P., Carsten né Meier, D., Mohammadi, J. B., Khodadadi, B., Mewes, T., Mishra, R., Gazquez, J., Borisevich, A. Y., Galazka, Z., Uecker, R., Reiss, G., Kuschel, T., & Gupta, A. (2020). Enhancement in thermally generated spin voltage at the interfaces between Pd and NiFe₂O₄ films grown on lattice-matched substrates. Physical Review Applied, 14(1), 014014.
    Schubert, M., Mock, A., Korlacki, R., Knight, S., Monemar, B., Goto, K., Kumagai, Y., Kuramata, A., Galazka, Z., Wagner, G., Tadjer, M. J., Wheeler, V. D., Higashiwaki, M., & Darakchieva, V. (2020). Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry β-Ga₂O₃. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 501–534). Springer International Publishing.

    Publications with GraFOx contribution 2019

    Hirschle, C., Schreuer, J., Ganschow, S., & Schulze-Jonack, I. (2019). Thermoelastic properties of rare-earth scandates SmScO3 , TbScO3 and DyScO3. Journal of Applied Physics, 126(16), 165103.
    Simion, C. E., Schipani, F., Papadogianni, A., Stanoiu, A., Budde, M., Oprea, A., Weimar, U., Bierwagen, O., & Barsan, N. (2019). Conductance model for single-crystalline/compact metal oxide gas-sensing layers in the nondegenerate limit: Example of epitaxial SnO2 (101). ACS Sensors, 4(9), 2420–2428.
    Nagata, T., Bierwagen, O., Galazka, Z., Ueda, S., Imura, M., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals. Japanese Journal of Applied Physics, 58(8), 080903.
    Michel, J., Splith, D., Rombach, J., Papadogianni, A., Berthold, T., Krischok, S., Grundmann, M., Bierwagen, O., von Wenckstern, H., & Himmerlich, M. (2019). Processing strategies for high-performance Schottky contacts on n-type oxide semiconductors: Insights from In2O3. ACS Applied Materials & Interfaces, 11(30), 27073–27087.
    Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., Rana, J., Tellekamp, M. B., Boschker, J. E., Markurt, T., Swallow, J. E. N., Jones, L. A. H., Veal, T. D., Yang, W., Lee, T.-L., Rodolakis, F., Sadowski, J. T., Prendergast, D., Lee, W.-C., … Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2. Physical Review Materials, 3(7), 074602.
    Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal. Japanese Journal of Applied Physics, 58(SD), SDDG06.
    Grillo, A., Barrat, J., Galazka, Z., Passacantando, M., Giubileo, F., Iemmo, L., Luongo, G., Urban, F., Dubourdieu, C., & Di Bartolomeo, A. (2019). High field-emission current density from β−Ga 2O3  nanopillars. Applied Physics Letters, 114(19), 193101.
    Lee, W.-C., Wahila, M. J., Mukherjee, S., Singh, C. N., Eustance, T., Regoutz, A., Paik, H., Boschker, J. E., Rodolakis, F., Lee, T.-L., Schlom, D. G., & Piper, L. F. J. (2019). Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2. Journal of Applied Physics, 125(8), 082539.
    Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., Parisini, A., Bosi, M., & Fornari, R. (2019). The electronic structure of ε −Ga2O3. APL Materials, 7(2), 022522.

    Publications with GraFOx contribution 2018

    Feneberg, M., Lidig, C., White, M. E., Tsai, M. Y., Speck, J. S., Bierwagen, O., Galazka, Z., & Goldhahn, R. (2018). Anisotropic optical properties of highly doped rutile SnO2 : Valence band contributions to the Burstein-Moss shift. APL Materials, 7(2), 022508.
    Tetzner, K., Thies, A., Bahat Treidel, E., Brunner, F., Wagner, G., & Würfl, J. (2018). Selective area isolation of β−Ga 2O3 using multiple energy nitrogen ion implantation. Applied Physics Letters, 113(17), 172104.
    Kracht, M., Karg, A., Feneberg, M., Bläsing, J., Schörmann, J., Goldhahn, R., & Eickhoff, M. (2018). Anisotropic optical properties of metastable ( 011¯2) α−Ga 2O3Grown by Plasma-Assisted Molecular Beam Epitaxy. Physical Review Applied, 10(2), 024047.
    Hirschle, C., Schreuer, J., & Galazka, Z. (2018). Interplay of cation ordering and thermoelastic properties of spinel structure MgGa2O4. Journal of Applied Physics, 124(6), 065111.
    Schleife, A., Neumann, M. D., Esser, N., Galazka, Z., Gottwald, A., Nixdorf, J., Goldhahn, R., & Feneberg, M. (2018). Optical properties of In2O3 from experiment and first-principles theory: influence of lattice screening. New Journal of Physics, 20(5), 053016.
    Zhang, J. Y., Li, W. W., Hoye, R. L. Z., MacManus-Driscoll, J. L., Budde, M., Bierwagen, O., Wang, L., Du, Y., Wahila, M. J., Piper, L. F. J., Lee, T.-L., Edwards, H. J., Dhanak, V. R., & Zhang, K. H. L. (2018). Electronic and transport properties of Li-doped NiO epitaxial thin films. Journal of Materials Chemistry C, 6(9), 2275–2282.

    Publications with GraFOx contribution 2017

    Berthold, T., Katzer, S., Rombach, J., Krischok, S., Bierwagen, O., & Himmerlich, M. (2017). Towards understanding the cross-sensitivity of In 2O3 based ozone sensors : Effects of O3, O2 and H2O adsorption at In 2O3 (111) surfaces. Physica Status Solidi (b), 255(4), 1700324.
    Li, D., Hoffmann, V., Richter, E., Tessaro, T., Galazka, Z., Weyers, M., & Tränkle, G. (2017). MOVPE growth of violet GaN LEDs on β−Ga 2O3 substrates. Journal of Crystal Growth, 478, 212–215.
    Segura, A., Artús, L., Cuscó, R., Goldhahn, R., & Feneberg, M. (2017). Band gap of corundumlike  α−Ga 2O3 determined by absorption and ellipsometry. Physical Review Materials, 1(2), 024604.
    Singh, A. V., Khodadadi, B., Mohammadi, J. B., Keshavarz, S., Mewes, T., Negi, D. S., Datta, R., Galazka, Z., Uecker, R., & Gupta, A. (2017). Bulk single crystal‐like structural and magnetic characteristics of epitaxial spinel ferrite thin films with elimination of antiphase boundaries. Advanced Materials, 29(30), 1701222.
    Cai, B., Schwarzkopf, J., Feldt, C., Sellmann, J., Markurt, T., & Wördenweber, R. (2017). Combined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3. Physical Review B, 95(18), 184108.
    Szalkai, D., Galazka, Z., Irmscher, K., Tutto, P., Klix, A., & Gehre, D. (2017). β−Ga 2O3 solid-state devices for fast neutron detection. IEEE Transactions on Nuclear Science, 64(6), 1574–1579.
    Green, A. J., Chabak, K. D., Baldini, M., Moser, N., Gilbert, R., Fitch, R. C., Wagner, G., Galazka, Z., Mccandless, J., Crespo, A., Leedy, K., & Jessen, G. H. (2017). β−Ga2O3 MOSFETs for Radio Frequency Operation. IEEE Electron Device Letters, 38(6), 790–793.
    Philippen, J., Guguschev, C., & Klimm, D. (2017). Single crystal fiber growth of cerium doped strontium yttrate, SrY2O4:Ce3+. Journal of Crystal Growth, 459, 17–22.
    Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yoshikawa, H., Yamashita, Y., & Chikyow, T. (2017). Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals. Applied Physics Express, 10(1), 011102.

    Publications with GraFOx contribution 2016

    Berthold, T., Rombach, J., Stauden, T., Polyakov, V., Cimalla, V., Krischok, S., Bierwagen, O., & Himmerlich, M. (2016). Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces. Journal of Applied Physics, 120(24), 245301.
    Chabak, K. D., Moser, N., Green, A. J., Walker, D. E., Tetlak, S. E., Heller, E., Crespo, A., Fitch, R., McCandless, J. P., Leedy, K., Baldini, M., Wagner, G., Galazka, Z., Li, X., & Jessen, G. (2016). Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β−Ga 2O3 substrate with high breakdown voltage. Applied Physics Letters, 109(21), 213501.
    Haeberle, J., Brizzi, S., Gaspar, D., Barquinha, P., Galazka, Z., Schulz, D., & Schmeißer, D. (2016). A spectroscopic comparison of IGZO thin films and the parent In2O3 , Ga2O3 , and ZnO single crystals. Materials Research Express, 3(10), 106302.
    Kaspar, T. C., Sushko, P. V., Bowden, M. E., Heald, S. M., Papadogianni, A., Tschammer, C., Bierwagen, O., & Chambers, S. A. (2016). Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films. Physical Review B, 94(15), 155409.
    Green, A. J., Chabak, K. D., Heller, E. R., Fitch, R. C., Baldini, M., Fiedler, A., Irmscher, K., Wagner, G., Galazka, Z., Tetlak, S. E., Crespo, A., Leedy, K., & Jessen, G. H. (2016). 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped β −Ga 2O3 MOSFETs. IEEE Electron Device Letters, 37(7), 902–905.