Co-authored Publications

    Publications with GraFOx contribution 2023

    Rajabi Kalvani, P., Parisini, A., Sozzi, G., Borelli, C., Mazzolini, P., Bierwagen, O., Vantaggio, S., Egbo, K., Bosi, M., Seravalli, L., & Fornari, R. (2023). Interfacial Properties of the SnO/κ-Ga₂O₃ p-n Heterojunction A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga₂O₃. ACS Applied Materials & Interfaces, acsami.3c08841. https://doi.org/10.1021/acsami.3c08841
    Langørgen, A., Kalmann Frodason, Y., Karsthof, R., von Wenckstern, H., Thue Jensen, I. J., Vines, L., & Grundmann, M. (2023). Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy. Journal of Applied Physics, 134(1), 015701. https://doi.org/10.1063/5.0150994
    Wang, R., Schultz, T., Papadogianni, A., Longhi, E., Gatsios, C., Zu, F., Zhai, T., Barlow, S., Marder, S. R., Bierwagen, O., Amsalem, P., & Koch, N. (2023). Tuning the surface electron accumulation layer of In₂O₃ by adsorption of molecular electron donors and acceptors. Small, 2300730. https://doi.org/10.1002/smll.202300730

    Publications with GraFOx contribution 2022

    Wang, Y., Wang, Q., Zhao, J., Niermann, T., Liu, Y., Dai, L., Zheng, K., Sun, Y., Zhang, Y., Schwarzkopf, J., Schroeder, T., Jiang, Z., Ren, W., & Niu, G. (2022). A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O₂ films with uniform polarization and high Curie temperature. Applied Materials Today, 29, 101587. https://doi.org/10.1016/j.apmt.2022.101587
    Islam, A. E., Sepelak, N. P., Liddy, K. J., Kahler, R., Dryden, D. M., Williams, J., Lee, H., Gann, K., Popp, A., Leedy, K. D., Hendricks, N. S., Brown, Jeff. L., Heller, E. R., Wang, W., Zhu, W., Thompson, M. O., Chabak, K. D., & Green, A. J. (2022). 500 °C operation of β-Ga ₂O₃field-Effect transistors. Applied Physics Letters, 121(24), 243501. https://doi.org/10.1063/5.0113744
    Gorelov, V., Reining, L., Feneberg, M., Goldhahn, R., Schleife, A., Lambrecht, W. R. L., & Gatti, M. (2022). Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅. Npj Computational Materials, 8(1), 94. https://doi.org/10.1038/s41524-022-00754-2
    Mazzolini, P., Fogarassy, Z., Parisini, A., Mezzadri, F., Diercks, D., Bosi, M., Seravalli, L., Sacchi, A., Spaggiari, G., Bersani, D., Bierwagen, O., Janzen, B. M., Marggraf, M. N., Wagner, M. R., Cora, I., Pecz, B., Tahraoui, A., Bosio, A., Borelli, C., … Fornari, R. (2022). Silane-mediated expansion of domains in Si-doped kappa-Ga ₂O₃ epitaxy and its impact on the in-Plane electronic conduction. Advanced Functional Materials, 2207821. https://doi.org/10.1002/adfm.202207821
    Huang, Y., Wu, X., Schalch, J., Duan, G., Chen, C., Zhao, X., Kaj, K., Zhang, H.-T., Engel-Herbert, R., Averitt, R. D., & Zhang, X. (2022). Complementary vanadium dioxide metamaterial with enhanced modulation amplitude at terahertz frequencies. Physical Review Applied, 18(5), 054086. https://doi.org/10.1103/PhysRevApplied.18.054086
    Kamutzki, F., Bekheet, M. F., Selve, S., Kampmann, F., Siemensmeyer, K., Kober, D., Gillen, R., Wagner, M., Maultzsch, J., Gurlo, A., & Hanaor, D. A. H. (2022). NaGdSi₂O₆-A novel antiferromagnetically coupled silicate with Vierer chain structure. Journal of Solid State Chemistry, 317, 123677. https://doi.org/10.1016/j.jssc.2022.123677
    Brown, H. G., Pelz, P. M., Hsu, S.-L., Zhang, Z., Ramesh, R., Inzani, K., Sheridan, E., Griffin, S. M., Schloz, M., Pekin, T. C., Koch, C. T., Findlay, S. D., Allen, L. J., Scott, M. C., Ophus, C., & Ciston, J. (2022). A three-dimensional reconstruction algorithm for scanning transmission electron microscopy data from a single sample orientation. Microscopy and Microanalysis, 28(5), 1632–1640. https://doi.org/10.1017/S1431927622012090
    Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Effect of post-metallization anneal on (100) Ga ₂O₃/Ti-Au ohmic contact performance and interfacial degradation. APL Materials, 10(9), 091105. https://doi.org/10.1063/5.0096245
    Ozsoy-Keskinbora, C., Van den Broek, W., Boothroyd, C. B., Dunin-Borkowski, R. E., van Aken, P. A., & Koch, C. T. (2022). Synergistic use of gradient flipping and phase prediction for inline electron holography. Scientific Reports, 12(1), 13294. https://doi.org/10.1038/s41598-022-17373-y
    Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Exploiting the nanostructural anisotropy of β-Ga ₂O₃ to demonstrate giant improvement in Titanium/Gold ohmic contacts. ACS Nano, 16(8), 11988–11997. https://doi.org/10.1021/acsnano.2c01957
    Cusco, R., Yamaguchi, T., Kluth, E., Goldhahn, R., & Feneberg, M. (2022). Optical properties of corundum-structured In₂O₃. Applied Physics Letters, 121(6), 062106. https://doi.org/10.1063/5.0096844
    Bein, N., Kmet, B., Rojac, T., Golob, A. B., Malic, B., Moxter, J., Schneider, T., Fulanovic, L., Azadeh, M., Froemling, T., Egert, S., Wang, H., van Aken, P., Schwarzkopf, J., & Klein, A. (2022). Fermi energy, electrical conductivity, and the energy gap of NaNbO₃. Physical Review Materials, 6(8), 084404. https://doi.org/10.1103/PhysRevMaterials.6.084404
    Ahn, G., Zingl, M., Noh, S. J., Brahlek, M., Roth, J. D., Engel-Herbert, R., Millis, A. J., & Moon, S. J. (2022). Low-energy interband transition in the infrared response of the correlated metal SrVO₃ in the ultraclean limit. Physical Review B, 106(8), 085133. https://doi.org/10.1103/PhysRevB.106.085133
    Ratcliff, L. E., Oshima, T., Nippert, F., Janzen, B. M., Kluth, E., Goldhahn, R., Feneberg, M., Mazzolini, P., Bierwagen, O., Wouters, C., Nofal, M., Albrecht, M., Swallow, J. E. N., Jones, L. A. H., Thakur, P. K., Lee, T.-L., Kalha, C., Schlueter, C., Veal, T. D., … Regoutz, A. (2022). Tackling disorder in γ-Ga ₂O₃. Advanced Materials, 34(37), 2204217. https://doi.org/10.1002/adma.202204217
    Foppa, L., Purcell, T. A. R., Levchenko, S. V., Scheffler, M., & Ghringhelli, L. M. (2022). Hierarchical symbolic regression for identifying key physical parameters correlated with bulk properties of Perovskites. Physical Review Letters, 129(5), 055301. https://doi.org/10.1103/PhysRevLett.129.055301
    Parisini, A., Mazzolini, P., Bierwagen, O., Borelli, C., Egbo, K., Sacchi, A., Bosi, M., Seravalli, L., Tahraoui, A., & Fornari, R. (2022). Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry. Journal of Vacuum Science & Technology A, 40(4), 042701. https://doi.org/10.1116/6.0001857
    Steigert, A., Kojda, D., Ibaceta-Jana, J., Abou-Ras, D., Gunder, R., Alktash, N., Habicht, K., Wagner, M. R., Klenk, R., Raoux, S., Szyszka, B., Lauermann, I., & Muydinov, R. (2022). Water-assisted crystallization of amorphous indium zinc oxide films. Materials Today Communications, 31, 103213. https://doi.org/10.1016/j.mtcomm.2022.103213
    Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., & Esseni, D. (2022). Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation. IEEE Transactions on Electron Devices, 69(7), 3694–3699. https://doi.org/10.1109/TED.2022.3175684
    Dai, L., Zhao, J., Li, J., Chen, B., Zhai, S., Xue, Z., Di, Z., Feng, B., Sun, Y., Luo, Y., Ma, M., Zhang, J., Ding, S., Zhao, L., Jiang, Z., Luo, W., Quan, Y., Schwarzkopf, J., Schroeder, T., … Niu, G. (2022). Highly heterogeneous epitaxy of flexoelectric BaTiO₃-δ membrane on Ge. Nature Communications, 13(1), 2990. https://doi.org/10.1038/s41467-022-30724-7
    Hilfiker, M., Williams, E., Kilic, U., Traouli, Y., Koeppe, N., Rivera, J., Abakar, A., Stokey, M., Korlacki, R., Galazka, Z., Irmscher, K., & Schubert, M. (2022). Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄. Applied Physics Letters, 120(13), 132105. https://doi.org/10.1063/5.0087623
    Xia, X., Al-Mamun, N. S., Fares, C., Haque, A., Ren, F., Hassa, A., von Wenckstern, H., Grundmann, M., & Pearton, S. J. (2022). Band Alignment of Al₂O₃ on A-(AlₓGa₁₋ₓ)₂O₃. ECS Journal of Solid State Science and Technology, 11(2), 025006. https://doi.org/10.1149/2162-8777/ac546f
    Green, A. J., Speck, J., Xing, G., Moens, P., Allerstam, F., Gumaelius, K., Neyer, T., Arias-Purdue, A., Mehrotra, V., Kuramata, A., Sasaki, K., Watanabe, S., Koshi, K., Blevins, J., Bierwagen, O., Krishnamoorthy, S., Leedy, K., Arehart, A. R., Neal, A. T., … Higashiwaki, M. (2022). β-Gallium oxide power electronics. APL Materials, 10(2), 029201. https://doi.org/10.1063/5.0060327

    Publications with GraFOx contribution 2021

    Hirschle, C., Schreuer, J., Galazka, Z., & Ritter, C. (2021). On the relation of structural disorder and thermoelastic properties in ZnGa₂O₄ and Zn₁₋ₓMgₓGa₂O₄ (x ≈ 0.33). Journal of Alloys and Compounds, 886, 161214. https://doi.org/10.1016/j.jallcom.2021.161214
    Uhlendorf, J., Galazka, Z., & Schmidt, H. (2021). Oxygen diffusion in β-Ga ₂O₃ single crystals at high temperatures. Applied Physics Letters, 119(24), 242106. https://doi.org/10.1063/5.0071729
    Stokey, M., Korlacki, R., Knight, S., Ruder, A., Hilfiker, M., Galazka, Z., Irmscher, K., Zhang, Y., Zhao, H., Darakchieva, V., & Schubert, M. (2021). Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In₂O₃. Journal of Applied Physics, 129(22), 225102. https://doi.org/10.1063/5.0052848
    Rodenbücher, C., Guguschev, C., Korte, C., Bette, S., & Szot, K. (2021). Is reduced strontium titanate a semiconductor or a Metal? Crystals, 11(7), 744. https://doi.org/10.3390/cryst11070744
    Xu, H., Wu, R., Zhang, J.-Y., Han, W., Chen, L., Liang, X., Haw, C. Y., Mazzolini, P., Bierwagen, O., Qi, D.-C., & Zhang, K. H. L. (2021). Revealing the electronic structure and optical properties of CuFeO₂ as a P-type oxide semiconductor. ACS Applied Electronic Materials, 3(4), 1834–1841. https://doi.org/10.1021/acsaelm.1c00090
    Windsor, Y. W., Zahn, D., Kamrla, R., Feldl, J., Seiler, H., Chiang, C.-T., Ramsteiner, M., Widdra, W., Ernstorfer, R., & Rettig, L. (2021). Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO. Physical Review Letters, 126(14), 147202. https://doi.org/10.1103/PhysRevLett.126.147202
    Regmi, S., Li, Z., Srivastava, A., Mahat, R., Kc, S., Rastogi, A., Galazka, Z., Datta, R., Mewes, T., & Gupta, A. (2021). Structural and magnetic properties of NiFe₂O₄ thin films grown on isostructural lattice-matched substrates. Applied Physics Letters, 118(15), 152402. https://doi.org/10.1063/5.0047865
    Lyle, L. A. M., Jiang, K., Favela, E. V., Das, K., Popp, A., Galazka, Z., Wagner, G., & Porter, L. M. (2021). Effect of metal contacts on (100) β-Ga ₂O₃ Schottky barriers. Journal of Vacuum Science & Technology A, 39(3), 033202. https://doi.org/10.1116/6.0000877
    Hilfiker, M., Stokey, M., Korlacki, R., Kilic, U., Galazka, Z., Irmscher, K., Zollner, S., & Schubert, M. (2021). Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters. Applied Physics Letters, 118(13), 132102. https://doi.org/10.1063/5.0043686
    Vogt, P., Hensling, F. V. E., Azizie, K., Chang, C. S., Turner, D., Park, J., McCandless, J. P., Paik, H., Bocklund, B. J., Hoffman, G., Bierwagen, O., Jena, D., Xing, H. G., Mou, S., Muller, D. A., Shang, S.-L., Liu, Z.-K., & Schlom, D. G. (2021). Adsorption-controlled growth of Ga₂O₃ by suboxide molecular-beam epitaxy. APL Materials, 9(3), 031101. https://doi.org/10.1063/5.0035469
    Zeuschner, S. P., Mattern, M., Pudell, J.-E., von Reppert, A., Rössle, M., Leitenberger, W., Schwarzkopf, J., Boschker, J. E., Herzog, M., & Bargheer, M. (2021). Reciprocal space slicing: A time-efficient approach to femtosecond x-Ray diffraction. Structural Dynamics, 8(1), 014302. https://doi.org/10.1063/4.0000040
    Xu, L., Fauqué, B., Zhu, Z., Galazka, Z., Irmscher, K., & Behnia, K. (2021). Thermal conductivity of bulk In₂O₃ single crystals. Physical Review Materials, 5(1), 014603. https://doi.org/10.1103/PhysRevMaterials.5.014603

    Publications with GraFOx contribution 2020

    Gopalan, P., Knight, S., Chanana, A., Stokey, M., Ranga, P., Scarpulla, M. A., Krishnamoorthy, S., Darakchieva, V., Galazka, Z., Irmscher, K., Fiedler, A., Blair, S., Schubert, M., & Sensale-Rodriguez, B. (2020). The anisotropic quasi-static permittivity of single-crystal β -Ga₂O₃ measured by terahertz spectroscopy. Applied Physics Letters, 117(25), 252103. https://doi.org/10.1063/5.0031464
    Jovic, V., Moser, S., Papadogianni, A., Koch, R. J., Rossi, A., Jozwiak, C., Bostwick, A., Rotenberg, E., Kennedy, J. V., Bierwagen, O., & Smith, K. E. (2020). The itinerant 2D electron gas of the indium oxide (111) surface: Implications for carbon- and energy-conversion applications. Small (Weinheim an Der Bergstrasse, Germany), 16(12), 1903321. https://doi.org/10.1002/smll.201903321
    Stokey, M., Korlacki, R., Knight, S., Hilfiker, M., Galazka, Z., Irmscher, K., Darakchieva, V., & Schubert, M. (2020). Brillouin zone center phonon modes in ZnGa₂O₄. Applied Physics Letters, 117(5), 052104. https://doi.org/10.1063/5.0012526
    Rastogi, A., Li, Z., Singh, A. V., Regmi, S., Peters, T., Bougiatioti, P., Carsten né Meier, D., Mohammadi, J. B., Khodadadi, B., Mewes, T., Mishra, R., Gazquez, J., Borisevich, A. Y., Galazka, Z., Uecker, R., Reiss, G., Kuschel, T., & Gupta, A. (2020). Enhancement in thermally generated spin voltage at the interfaces between Pd and NiFe₂O₄ films grown on lattice-matched substrates. Physical Review Applied, 14(1), 014014. https://doi.org/10.1103/PhysRevApplied.14.014014
    Schubert, M., Mock, A., Korlacki, R., Knight, S., Monemar, B., Goto, K., Kumagai, Y., Kuramata, A., Galazka, Z., Wagner, G., Tadjer, M. J., Wheeler, V. D., Higashiwaki, M., & Darakchieva, V. (2020). Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry β-Ga₂O₃. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 501–534). Springer International Publishing. https://doi.org/10.1007/978-3-030-37153-1_28

    Publications with GraFOx contribution 2019

    Hirschle, C., Schreuer, J., Ganschow, S., & Schulze-Jonack, I. (2019). Thermoelastic properties of rare-earth scandates SmScO3 , TbScO3 and DyScO3. Journal of Applied Physics, 126(16), 165103. https://doi.org/10.1063/1.5108584
    Simion, C. E., Schipani, F., Papadogianni, A., Stanoiu, A., Budde, M., Oprea, A., Weimar, U., Bierwagen, O., & Barsan, N. (2019). Conductance model for single-crystalline/compact metal oxide gas-sensing layers in the nondegenerate limit: Example of epitaxial SnO2 (101). ACS Sensors, 4(9), 2420–2428. https://doi.org/10.1021/acssensors.9b01018
    Nagata, T., Bierwagen, O., Galazka, Z., Ueda, S., Imura, M., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals. Japanese Journal of Applied Physics, 58(8), 080903. https://doi.org/10.7567/1347-4065/ab2c1e
    Michel, J., Splith, D., Rombach, J., Papadogianni, A., Berthold, T., Krischok, S., Grundmann, M., Bierwagen, O., von Wenckstern, H., & Himmerlich, M. (2019). Processing strategies for high-performance Schottky contacts on n-type oxide semiconductors: Insights from In2O3. ACS Applied Materials & Interfaces, 11(30), 27073–27087. https://doi.org/10.1021/acsami.9b06455
    Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., Rana, J., Tellekamp, M. B., Boschker, J. E., Markurt, T., Swallow, J. E. N., Jones, L. A. H., Veal, T. D., Yang, W., Lee, T.-L., Rodolakis, F., Sadowski, J. T., Prendergast, D., Lee, W.-C., … Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2. Physical Review Materials, 3(7), 074602. https://doi.org/10.1103/PhysRevMaterials.3.074602
    Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal. Japanese Journal of Applied Physics, 58(SD), SDDG06. https://doi.org/10.7567/1347-4065/ab0ff0
    Grillo, A., Barrat, J., Galazka, Z., Passacantando, M., Giubileo, F., Iemmo, L., Luongo, G., Urban, F., Dubourdieu, C., & Di Bartolomeo, A. (2019). High field-emission current density from β−Ga 2O3  nanopillars. Applied Physics Letters, 114(19), 193101. https://doi.org/10.1063/1.5096596
    Lee, W.-C., Wahila, M. J., Mukherjee, S., Singh, C. N., Eustance, T., Regoutz, A., Paik, H., Boschker, J. E., Rodolakis, F., Lee, T.-L., Schlom, D. G., & Piper, L. F. J. (2019). Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2. Journal of Applied Physics, 125(8), 082539. https://doi.org/10.1063/1.5052636
    Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., Parisini, A., Bosi, M., & Fornari, R. (2019). The electronic structure of ε −Ga2O3. APL Materials, 7(2), 022522. https://doi.org/10.1063/1.5054395

    Publications with GraFOx contribution 2018

    Feneberg, M., Lidig, C., White, M. E., Tsai, M. Y., Speck, J. S., Bierwagen, O., Galazka, Z., & Goldhahn, R. (2018). Anisotropic optical properties of highly doped rutile SnO2 : Valence band contributions to the Burstein-Moss shift. APL Materials, 7(2), 022508. https://doi.org/10.1063/1.5054351
    Tetzner, K., Thies, A., Bahat Treidel, E., Brunner, F., Wagner, G., & Würfl, J. (2018). Selective area isolation of β−Ga 2O3 using multiple energy nitrogen ion implantation. Applied Physics Letters, 113(17), 172104. https://doi.org/10.1063/1.5046139
    Kracht, M., Karg, A., Feneberg, M., Bläsing, J., Schörmann, J., Goldhahn, R., & Eickhoff, M. (2018). Anisotropic optical properties of metastable ( 011¯2) α−Ga 2O3Grown by Plasma-Assisted Molecular Beam Epitaxy. Physical Review Applied, 10(2), 024047. https://doi.org/10.1103/PhysRevApplied.10.024047
    Hirschle, C., Schreuer, J., & Galazka, Z. (2018). Interplay of cation ordering and thermoelastic properties of spinel structure MgGa2O4. Journal of Applied Physics, 124(6), 065111. https://doi.org/10.1063/1.5037786
    Schleife, A., Neumann, M. D., Esser, N., Galazka, Z., Gottwald, A., Nixdorf, J., Goldhahn, R., & Feneberg, M. (2018). Optical properties of In2O3 from experiment and first-principles theory: influence of lattice screening. New Journal of Physics, 20(5), 053016. https://doi.org/10.1088/1367-2630/aabeb0
    Zhang, J. Y., Li, W. W., Hoye, R. L. Z., MacManus-Driscoll, J. L., Budde, M., Bierwagen, O., Wang, L., Du, Y., Wahila, M. J., Piper, L. F. J., Lee, T.-L., Edwards, H. J., Dhanak, V. R., & Zhang, K. H. L. (2018). Electronic and transport properties of Li-doped NiO epitaxial thin films. Journal of Materials Chemistry C, 6(9), 2275–2282. https://doi.org/10.1039/C7TC05331B

    Publications with GraFOx contribution 2017

    Berthold, T., Katzer, S., Rombach, J., Krischok, S., Bierwagen, O., & Himmerlich, M. (2017). Towards understanding the cross-sensitivity of In 2O3 based ozone sensors : Effects of O3, O2 and H2O adsorption at In 2O3 (111) surfaces. Physica Status Solidi (b), 255(4), 1700324. https://doi.org/10.1002/pssb.201700324
    Li, D., Hoffmann, V., Richter, E., Tessaro, T., Galazka, Z., Weyers, M., & Tränkle, G. (2017). MOVPE growth of violet GaN LEDs on β−Ga 2O3 substrates. Journal of Crystal Growth, 478, 212–215. https://doi.org/10.1016/j.jcrysgro.2017.08.023
    Segura, A., Artús, L., Cuscó, R., Goldhahn, R., & Feneberg, M. (2017). Band gap of corundumlike  α−Ga 2O3 determined by absorption and ellipsometry. Physical Review Materials, 1(2), 024604. https://doi.org/10.1103/PhysRevMaterials.1.024604
    Singh, A. V., Khodadadi, B., Mohammadi, J. B., Keshavarz, S., Mewes, T., Negi, D. S., Datta, R., Galazka, Z., Uecker, R., & Gupta, A. (2017). Bulk single crystal‐like structural and magnetic characteristics of epitaxial spinel ferrite thin films with elimination of antiphase boundaries. Advanced Materials, 29(30), 1701222. https://doi.org/10.1002/adma.201701222
    Cai, B., Schwarzkopf, J., Feldt, C., Sellmann, J., Markurt, T., & Wördenweber, R. (2017). Combined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3. Physical Review B, 95(18), 184108. https://doi.org/10.1103/PhysRevB.95.184108
    Szalkai, D., Galazka, Z., Irmscher, K., Tutto, P., Klix, A., & Gehre, D. (2017). β−Ga 2O3 solid-state devices for fast neutron detection. IEEE Transactions on Nuclear Science, 64(6), 1574–1579. https://doi.org/10.1109/TNS.2017.2698831
    Green, A. J., Chabak, K. D., Baldini, M., Moser, N., Gilbert, R., Fitch, R. C., Wagner, G., Galazka, Z., Mccandless, J., Crespo, A., Leedy, K., & Jessen, G. H. (2017). β−Ga2O3 MOSFETs for Radio Frequency Operation. IEEE Electron Device Letters, 38(6), 790–793. https://doi.org/10.1109/LED.2017.2694805
    Philippen, J., Guguschev, C., & Klimm, D. (2017). Single crystal fiber growth of cerium doped strontium yttrate, SrY2O4:Ce3+. Journal of Crystal Growth, 459, 17–22. https://doi.org/10.1016/j.jcrysgro.2016.11.033
    Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yoshikawa, H., Yamashita, Y., & Chikyow, T. (2017). Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals. Applied Physics Express, 10(1), 011102. https://doi.org/10.7567/APEX.10.011102

    Publications with GraFOx contribution 2016

    Berthold, T., Rombach, J., Stauden, T., Polyakov, V., Cimalla, V., Krischok, S., Bierwagen, O., & Himmerlich, M. (2016). Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces. Journal of Applied Physics, 120(24), 245301. https://doi.org/10.1063/1.4972474
    Chabak, K. D., Moser, N., Green, A. J., Walker, D. E., Tetlak, S. E., Heller, E., Crespo, A., Fitch, R., McCandless, J. P., Leedy, K., Baldini, M., Wagner, G., Galazka, Z., Li, X., & Jessen, G. (2016). Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β−Ga 2O3 substrate with high breakdown voltage. Applied Physics Letters, 109(21), 213501. https://doi.org/10.1063/1.4967931
    Haeberle, J., Brizzi, S., Gaspar, D., Barquinha, P., Galazka, Z., Schulz, D., & Schmeißer, D. (2016). A spectroscopic comparison of IGZO thin films and the parent In2O3 , Ga2O3 , and ZnO single crystals. Materials Research Express, 3(10), 106302. https://doi.org/10.1088/2053-1591/3/10/106302
    Kaspar, T. C., Sushko, P. V., Bowden, M. E., Heald, S. M., Papadogianni, A., Tschammer, C., Bierwagen, O., & Chambers, S. A. (2016). Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films. Physical Review B, 94(15), 155409. https://doi.org/10.1103/PhysRevB.94.155409
    Green, A. J., Chabak, K. D., Heller, E. R., Fitch, R. C., Baldini, M., Fiedler, A., Irmscher, K., Wagner, G., Galazka, Z., Tetlak, S. E., Crespo, A., Leedy, K., & Jessen, G. H. (2016). 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped β −Ga 2O3 MOSFETs. IEEE Electron Device Letters, 37(7), 902–905. https://doi.org/10.1109/LED.2016.2568139