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Seyidov, P., Varley, J. B., Shen, J.-X., Galazka, Z., Chou, T.-S., Popp, A., Albrecht, M., Irmscher, K., & Fiedler, A. (2023). Charge state transition levels of Ni in β-Ga₂O₃ crystals from experiment and theory: An attractive candidate for compensation doping. Journal of Applied Physics, 134(20), 205701. https://doi.org/10.1063/5.0173761

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Van Dijck, C., Maudet, F., Dubourdieu, C., & Deshpande, V. (2023). Amorphous GaOx based charge trap memory device for neuromorphic applications. Solid-State Electronics, 207, 108717. https://doi.org/10.1016/j.sse.2023.108717

Tetzner, K., Thies, A., Seyidov, P., Chou, T.-S., Rehm, J., Ostermay, I., Galazka, Z., Fiedler, A., Popp, A., Würfl, J., & Hilt, O. (2023). Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing. Journal of Vacuum Science & Technology A, 41(4), 043102. https://doi.org/10.1116/6.0002642

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Chen, W., Egbo, K., Tornatzky, H., Ramsteiner, M., Wagner, M. R., & Bierwagen, O. (2023). In situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO₂ and its etching by Ge. APL Materials, 11(7), 071110. https://doi.org/10.1063/5.0155869

Schultz, T., Kneiß, M., Storm, P., Splith, D., von Wenckstern, H., Koch, C. T., Hammud, A., Grundmann, M., & Koch, N. (2023). Growth of κ-([Al,In]ₓGa₁₋ₓ)₂O₃ quantum wells and their potential for quantum-well infrared photodetectors. ACS Applied Materials & Interfaces, 15(24), 29535–29541. https://doi.org/10.1021/acsami.3c02695

Chou, T.-S., Seyidov, P., Bin Anooz, S., Grüneberg, R., Rehm, J., Tran, T. T. V., Fiedler, A., Tetzner, K., Galazka, Z., Albrecht, M., & Popp, A. (2023). High-mobility 4 μm MOVPE-grown (100) β-Ga₂O₃ film by parasitic particles suppression. Japanese Journal of Applied Physics, 62(SF), SF1004. https://doi.org/10.35848/1347-4065/acb360

Petersen, C., Vogt, S., Kneiß, M., von Wenckstern, H., & Grundmann, M. (2023). PLD of α-Ga₂O₃ on m-plane Al₂O₃: Growth regime, growth process, and structural properties. APL Materials, 11(6), 061122. https://doi.org/10.1063/5.0149797

Kluth, E., Anhar Uddin Bhuiyan, A. F. M., Meng, L., Bläsing, J., Zhao, H., Strittmatter, A., Goldhahn, R., & Feneberg, M. (2023). Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlₓGa₁₋ₓ)₂O₃ alloys. Japanese Journal of Applied Physics, 62(5), 051001. https://doi.org/10.35848/1347-4065/acd095

Tetzner, K., Klupsch, M., Popp, A., Bin Anooz, S., Chou, T.-S., Galazka, Z., Ickert, K., Matalla, M., Unger, R.-S., Treidel, E. B., Wolf, M., Trampert, A., Würfl, J., & Hilt, O. (2023). Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm ⁻¹. Japanese Journal of Applied Physics, 62(SF), SF1010. https://doi.org/10.35848/1347-4065/acbebc

Baki, A., Abdeldayem, M., Morales, C., Flege, J. I., Klimm, D., Bierwagen, O., & Schwarzkopf, J. (2023). Potential of La-doped SrTiO₃ thin films grown by metal–organic vapor phase epitaxy for thermoelectric applications. Crystal Growth & Design, 23(4), 2522–2530. https://doi.org/10.1021/acs.cgd.2c01438

Egbo, K., Lähnemann, J., Falkenstein, A., Varley, J. B., & Bierwagen, O. (2023). Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing. Applied Physics Letters, 122, 122101. https://doi.org/10.1063/5.0130935

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Reis, A., Hanke, M., Bierwagen, O., Trampert, A., Mazzolini, P., & Welter, E. (2023). Disorder–Order transition in Ga₂O₃ and its solid solution with In₂O₃ upon thermal annealing. Physica Status Solidi (b), 2200535. https://doi.org/10.1002/pssb.202200535

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Jaber, N., Feldl, J., Stoever, J., Irmscher, K., Albrecht, M., Ramsteiner, M., & Schwarzkopf, J. (2023). Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO₂ films grown by pulsed-laser deposition. Physical Review Materials, 7(1), 014601. https://doi.org/10.1103/PhysRevMaterials.7.014601

Galazka, Z., Fiedler, A., Popp, A., Ganschow, S., Kwasniewski, A., Seyidov, P., Pietsch, M., Dittmar, A., Anooz, S. B., Irmscher, K., Suendermann, M., Klimm, D., Chou, T.-S., Rehm, J., Schroeder, T., & Bickermann, M. (2023). Bulk single crystals and physical properties of β-(AlₓGa₁₋ₓ)₂O₃ (x = 0–0.35) grown by the Czochralski method. Journal of Applied Physics, 133(3), 035702. https://doi.org/10.1063/5.0131285

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Chou, T.-S., Bin Anooz, S., Grüneberg, R., Tran, T. V. T., Rehm, J., Galazka, Z., & Popp, A. (2023). Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy. Journal of Crystal Growth, 603, 127003. https://doi.org/10.1016/j.jcrysgro.2022.127003

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Klimm, D., Amgalan, B., Ganschow, S., Kwasniewski, A., Galazka, Z., & Bickermann, M. (2022). The thermal conductivity tensor of β-Ga₂O₃ from 300 to 1275 K. Crystal Research and Technology, 58(2), 2200204. https://doi.org/10.1002/crat.202200204

Seyidov, P., Varley, J. B., Galazka, Z., Chou, T.-S., Popp, A., Fiedler, A., & Irmscher, K. (2022). Cobalt as a promising dopant for producing semi-insulating β-Ga₂O₃ crystals: Charge state transition levels from experiment and theory. APL Materials, 10(11), 111109. https://doi.org/10.1063/5.0112915

Pfützenreuter, D., Kim, S., Cho, H., Bierwagen, O., Zupancic, M., Albrecht, M., Char, K., & Schwarzkopf, J. (2022). Confinement of electrons at the LaInO₃/BaSnO₃ heterointerface. Advanced Materials Interfaces, 9, 2201279. https://doi.org/10.1002/admi.202201279

Guimaraes, M. de O., Richter, C., Hanke, M., Anooz, S. B., Wang, Y., Schwarzkopf, J., & Schmidbauer, M. (2022). Ferroelectric phase transitions in tensile-strained NaNbO₃ epitaxial films probed by in situ x-Ray diffraction. Journal of Applied Physics, 132(15), 154102. https://doi.org/10.1063/5.0113949

Wang, Y., Bin Anooz, S., Niu, G., Schmidbauer, M., Wang, L., Ren, W., & Schwarzkopf, J. (2022). Thickness effect on ferroelectric domain formation in compressively strained K_0.65Na_0.35NbO₃ epitaxial films. Physical Review Materials, 6(8), 084413. https://doi.org/10.1103/PhysRevMaterials.6.084413

Chou, T.-S., Bin Anooz, S., Grueneberg, R., Dropka, N., Miller, W., Tran, T. T. V., Rehm, J., Albrecht, M., & Popp, A. (2022). Machine learning supported analysis of MOVPE grown β-Ga₂O₃ thin films on sapphire. Journal of Crystal Growth, 592, 126737. https://doi.org/10.1016/j.jcrysgro.2022.126737

Vorwerk, C., Sottile, F., & Draxl, C. (2022). All-electron many-body approach to resonant inelastic X-ray scattering. Physical Chemistry Chemical Physics, 24(29), 17439–17448. https://doi.org/10.1039/d2cp00994c

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Ardenghi, A., Bierwagen, O., Falkenstein, A., Hoffmann, G., Lähnemann, J., Martin, M., & Mazzolini, P. (2022). Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga₂O₃. Applied Physics Letters, 121(4), 042109. https://doi.org/10.1063/5.0087987

Hamada, M., Ganschow, S., Klimm, D., Serghiou, G., Reichmann, H.-J., & Bickermann, M. (2022). Wüstite (Fe₁₋ₓO) - Thermodynamics and crystal growth. Zeitschrift Für Naturforschung B, 77(6), 463–468. https://doi.org/10.1515/znb-2022-0071

Bin Anooz, S., Wang, Y., Petrik, P., de Oliveira Guimaraes, M., Schmidbauer, M., & Schwarzkopf, J. (2022). High temperature phase transitions in NaNbO₃ epitaxial films grown under tensile lattice strain. Applied Physics Letters, 120(20), 202901. https://doi.org/10.1063/5.0087959

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Papadogianni, A., Nagata, T., & Bierwagen, O. (2022). The electrical conductivity of cubic (In₁₋ₓGaₓ)₂O₃ films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer. Japanese Journal of Applied Physics, 61(4), 045502. https://doi.org/10.35848/1347-4065/ac4ec7

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Boy, J., Mitdank, R., Galazka, Z., & Fischer, S. F. (2022). Thermal conductivity, diffusivity and specific heat capacity of as-Grown, degenerate single-crystalline ZnGa₂O₄. Materials Research Express, 9(6), 065902. https://doi.org/10.1088/2053-1591/ac5f8a

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Seyidov, P., Ramsteiner, M., Galazka, Z., & Irmscher, K. (2022). Resonant electronic Raman scattering from Ir4+ ions in β -Ga2O3. Journal of Applied Physics, 131(3), 035707. https://doi.org/10.1063/5.0080248

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