Co-authored Publications

Chou, T., Tran, T. T. V., Peelaers, H., Tetzner, K., Hilt, O., Rehm, J., Bin Anooz, S., Fiedler, A., Galazka, Z., Albrecht, M., & Popp, A. (2024). Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga ₂ O ₃ Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices. Advanced Electronic Materials, 2400342. https://doi.org/10.1002/aelm.202400342

Kalvani, P. R., Pavesi, M., Bierwagen, O., Vantaggio, S., Mattei, F., Mazzolini, P., Fornari, R., & Parisini, A. (2024). Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga₂O₃ planar Schottky diode. Materials Science in Semiconductor Processing, 185, 109004. https://doi.org/10.1016/j.mssp.2024.109004

Zhang, J., Yang, Z., Kuang, S., Zhang, Z., Wei, S., Willis, J., Lee, T.-L., Mazzolini, P., Bierwagen, O., Chen, S., Chen, Z., Chen, D., Qi, H., Scanlon, D., & Zhang, K. H. L. (2024). Electronic structure and surface band bending of Sn-doped β−Ga₂O₃ thin films studied by x-ray photoemission spectroscopy and ab initio calculations. Physical Review B, 110(11), 115120. https://doi.org/10.1103/PhysRevB.110.115120

Galazka, Z., Fiedler, A., Popp, A., Seyidov, P., Anooz, S. B., Blukis, R., Rehm, J., Tetzner, K., Pietsch, M., Dittmar, A., Ganschow, S., Akhtar, A., Remmele, T., Albrecht, M., Schulz, T., Chou, T., Kwasniewski, A., Suendermann, M., Schroeder, T., & Bickermann, M. (2024). Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al _x Ga _1‐x ) ₂ O Single Crystals Grown by the Czochralski Method. Advanced Materials Interfaces, 2400122. https://doi.org/10.1002/admi.202400122

Mazzolini, P., Varley, J. B., Parisini, A., Sacchi, A., Pavesi, M., Bosio, A., Bosi, M., Seravalli, L., Janzen, B. M., Marggraf, M. N., Bernhard, N., Wagner, M. R., Ardenghi, A., Bierwagen, O., Falkenstein, A., Kler, J., De Souza, R. A., Martin, M., Mezzadri, F., … Fornari, R. (2024). Engineering shallow and deep level defects in κ-Ga₂O₃ thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments. Materials Today Physics, 45, 101463. https://doi.org/10.1016/j.mtphys.2024.101463

Fratello, V. J., Boatner, L. A., Dabkowska, H. A., Dabkowski, A., Siegrist, T., Wei, K., Guguschev, C., Klimm, D., Brützam, M., Schlom, D. G., & Subramanian, S. (2024). Solid solution perovskite substrate materials with indifferent points. Journal of Crystal Growth, 634, 127606. https://doi.org/10.1016/j.jcrysgro.2024.127606

Rajabi Kalvani, P., Parisini, A., Sozzi, G., Borelli, C., Mazzolini, P., Bierwagen, O., Vantaggio, S., Egbo, K., Bosi, M., Seravalli, L., & Fornari, R. (2023). Interfacial properties of the SnO/κ-Ga₂O₃ p-n heterojunction a case of subsurface doping density reduction via thermal treatment in κ-Ga₂O₃. ACS Applied Materials & Interfaces, acsami.3c08841. https://doi.org/10.1021/acsami.3c08841

Langørgen, A., Kalmann Frodason, Y., Karsthof, R., von Wenckstern, H., Thue Jensen, I. J., Vines, L., & Grundmann, M. (2023). Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy. Journal of Applied Physics, 134(1), 015701. https://doi.org/10.1063/5.0150994

Wang, R., Schultz, T., Papadogianni, A., Longhi, E., Gatsios, C., Zu, F., Zhai, T., Barlow, S., Marder, S. R., Bierwagen, O., Amsalem, P., & Koch, N. (2023). Tuning the surface electron accumulation layer of In₂O₃ by adsorption of molecular electron donors and acceptors. Small, 2300730. https://doi.org/10.1002/smll.202300730

Wang, Y., Wang, Q., Zhao, J., Niermann, T., Liu, Y., Dai, L., Zheng, K., Sun, Y., Zhang, Y., Schwarzkopf, J., Schroeder, T., Jiang, Z., Ren, W., & Niu, G. (2022). A robust high-performance electronic synapse based on epitaxial ferroelectric Hf_0.5Zr_0.5O₂ films with uniform polarization and high Curie temperature. Applied Materials Today, 29, 101587. https://doi.org/10.1016/j.apmt.2022.101587

Islam, A. E., Sepelak, N. P., Liddy, K. J., Kahler, R., Dryden, D. M., Williams, J., Lee, H., Gann, K., Popp, A., Leedy, K. D., Hendricks, N. S., Brown, Jeff. L., Heller, E. R., Wang, W., Zhu, W., Thompson, M. O., Chabak, K. D., & Green, A. J. (2022). 500 °C operation of β-Ga ₂O₃field-Effect transistors. Applied Physics Letters, 121(24), 243501. https://doi.org/10.1063/5.0113744

Gorelov, V., Reining, L., Feneberg, M., Goldhahn, R., Schleife, A., Lambrecht, W. R. L., & Gatti, M. (2022). Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅. Npj Computational Materials, 8(1), 94. https://doi.org/10.1038/s41524-022-00754-2

Mazzolini, P., Fogarassy, Z., Parisini, A., Mezzadri, F., Diercks, D., Bosi, M., Seravalli, L., Sacchi, A., Spaggiari, G., Bersani, D., Bierwagen, O., Janzen, B. M., Marggraf, M. N., Wagner, M. R., Cora, I., Pecz, B., Tahraoui, A., Bosio, A., Borelli, C., … Fornari, R. (2022). Silane-mediated expansion of domains in Si-doped kappa-Ga ₂O₃ epitaxy and its impact on the in-Plane electronic conduction. Advanced Functional Materials, 2207821. https://doi.org/10.1002/adfm.202207821

Huang, Y., Wu, X., Schalch, J., Duan, G., Chen, C., Zhao, X., Kaj, K., Zhang, H.-T., Engel-Herbert, R., Averitt, R. D., & Zhang, X. (2022). Complementary vanadium dioxide metamaterial with enhanced modulation amplitude at terahertz frequencies. Physical Review Applied, 18(5), 054086. https://doi.org/10.1103/PhysRevApplied.18.054086

Kamutzki, F., Bekheet, M. F., Selve, S., Kampmann, F., Siemensmeyer, K., Kober, D., Gillen, R., Wagner, M., Maultzsch, J., Gurlo, A., & Hanaor, D. A. H. (2022). NaGdSi₂O₆-A novel antiferromagnetically coupled silicate with Vierer chain structure. Journal of Solid State Chemistry, 317, 123677. https://doi.org/10.1016/j.jssc.2022.123677

Brown, H. G., Pelz, P. M., Hsu, S.-L., Zhang, Z., Ramesh, R., Inzani, K., Sheridan, E., Griffin, S. M., Schloz, M., Pekin, T. C., Koch, C. T., Findlay, S. D., Allen, L. J., Scott, M. C., Ophus, C., & Ciston, J. (2022). A three-dimensional reconstruction algorithm for scanning transmission electron microscopy data from a single sample orientation. Microscopy and Microanalysis, 28(5), 1632–1640. https://doi.org/10.1017/S1431927622012090

Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Effect of post-metallization anneal on (100) Ga ₂O₃/Ti-Au ohmic contact performance and interfacial degradation. APL Materials, 10(9), 091105. https://doi.org/10.1063/5.0096245

Ozsoy-Keskinbora, C., Van den Broek, W., Boothroyd, C. B., Dunin-Borkowski, R. E., van Aken, P. A., & Koch, C. T. (2022). Synergistic use of gradient flipping and phase prediction for inline electron holography. Scientific Reports, 12(1), 13294. https://doi.org/10.1038/s41598-022-17373-y

Lee, M.-H., Chou, T.-S., Bin Anooz, S., Galazka, Z., Popp, A., & Peterson, R. L. (2022). Exploiting the nanostructural anisotropy of β-Ga ₂O₃ to demonstrate giant improvement in Titanium/Gold ohmic contacts. ACS Nano, 16(8), 11988–11997. https://doi.org/10.1021/acsnano.2c01957

Cusco, R., Yamaguchi, T., Kluth, E., Goldhahn, R., & Feneberg, M. (2022). Optical properties of corundum-structured In₂O₃. Applied Physics Letters, 121(6), 062106. https://doi.org/10.1063/5.0096844

Bein, N., Kmet, B., Rojac, T., Golob, A. B., Malic, B., Moxter, J., Schneider, T., Fulanovic, L., Azadeh, M., Froemling, T., Egert, S., Wang, H., van Aken, P., Schwarzkopf, J., & Klein, A. (2022). Fermi energy, electrical conductivity, and the energy gap of NaNbO₃. Physical Review Materials, 6(8), 084404. https://doi.org/10.1103/PhysRevMaterials.6.084404

Ahn, G., Zingl, M., Noh, S. J., Brahlek, M., Roth, J. D., Engel-Herbert, R., Millis, A. J., & Moon, S. J. (2022). Low-energy interband transition in the infrared response of the correlated metal SrVO₃ in the ultraclean limit. Physical Review B, 106(8), 085133. https://doi.org/10.1103/PhysRevB.106.085133

Ratcliff, L. E., Oshima, T., Nippert, F., Janzen, B. M., Kluth, E., Goldhahn, R., Feneberg, M., Mazzolini, P., Bierwagen, O., Wouters, C., Nofal, M., Albrecht, M., Swallow, J. E. N., Jones, L. A. H., Thakur, P. K., Lee, T.-L., Kalha, C., Schlueter, C., Veal, T. D., … Regoutz, A. (2022). Tackling disorder in γ-Ga ₂O₃. Advanced Materials, 34(37), 2204217. https://doi.org/10.1002/adma.202204217

Foppa, L., Purcell, T. A. R., Levchenko, S. V., Scheffler, M., & Ghringhelli, L. M. (2022). Hierarchical symbolic regression for identifying key physical parameters correlated with bulk properties of Perovskites. Physical Review Letters, 129(5), 055301. https://doi.org/10.1103/PhysRevLett.129.055301

Parisini, A., Mazzolini, P., Bierwagen, O., Borelli, C., Egbo, K., Sacchi, A., Bosi, M., Seravalli, L., Tahraoui, A., & Fornari, R. (2022). Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry. Journal of Vacuum Science & Technology A, 40(4), 042701. https://doi.org/10.1116/6.0001857

Steigert, A., Kojda, D., Ibaceta-Jana, J., Abou-Ras, D., Gunder, R., Alktash, N., Habicht, K., Wagner, M. R., Klenk, R., Raoux, S., Szyszka, B., Lauermann, I., & Muydinov, R. (2022). Water-assisted crystallization of amorphous indium zinc oxide films. Materials Today Communications, 31, 103213. https://doi.org/10.1016/j.mtcomm.2022.103213

Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., & Esseni, D. (2022). Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation. IEEE Transactions on Electron Devices, 69(7), 3694–3699. https://doi.org/10.1109/TED.2022.3175684

Dai, L., Zhao, J., Li, J., Chen, B., Zhai, S., Xue, Z., Di, Z., Feng, B., Sun, Y., Luo, Y., Ma, M., Zhang, J., Ding, S., Zhao, L., Jiang, Z., Luo, W., Quan, Y., Schwarzkopf, J., Schroeder, T., … Niu, G. (2022). Highly heterogeneous epitaxy of flexoelectric BaTiO₃-δ membrane on Ge. Nature Communications, 13(1), 2990. https://doi.org/10.1038/s41467-022-30724-7

Reichmann, F., Dabrowski, J., Becker, A. P., Klesse, W. M., Irmscher, K., Schewski, R., Galazka, Z., & Mulazzi, M. (2022). Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa ₂ O ₄ (100) Single‐Crystals. Physica Status Solidi (b), 259(3), 2100452. https://doi.org/10.1002/pssb.202100452

Hilfiker, M., Williams, E., Kilic, U., Traouli, Y., Koeppe, N., Rivera, J., Abakar, A., Stokey, M., Korlacki, R., Galazka, Z., Irmscher, K., & Schubert, M. (2022). Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄. Applied Physics Letters, 120(13), 132105. https://doi.org/10.1063/5.0087623

Xia, X., Al-Mamun, N. S., Fares, C., Haque, A., Ren, F., Hassa, A., von Wenckstern, H., Grundmann, M., & Pearton, S. J. (2022). Band Alignment of Al₂O₃ on A-(AlₓGa₁₋ₓ)₂O₃. ECS Journal of Solid State Science and Technology, 11(2), 025006. https://doi.org/10.1149/2162-8777/ac546f

Green, A. J., Speck, J., Xing, G., Moens, P., Allerstam, F., Gumaelius, K., Neyer, T., Arias-Purdue, A., Mehrotra, V., Kuramata, A., Sasaki, K., Watanabe, S., Koshi, K., Blevins, J., Bierwagen, O., Krishnamoorthy, S., Leedy, K., Arehart, A. R., Neal, A. T., … Higashiwaki, M. (2022). β-Gallium oxide power electronics. APL Materials, 10(2), 029201. https://doi.org/10.1063/5.0060327

Uhlendorf, J., Galazka, Z., & Schmidt, H. (2021). Oxygen diffusion in β-Ga₂O₃ single crystals at high temperatures. Applied Physics Letters, 119(24), 242106. https://doi.org/10.1063/5.0071729

Hirschle, C., Schreuer, J., Galazka, Z., & Ritter, C. (2021). On the relation of structural disorder and thermoelastic properties in ZnGa₂O₄ and Zn₁₋ₓMgₓGa₂O₄ (x ≈ 0.33). Journal of Alloys and Compounds, 886, 161214. https://doi.org/10.1016/j.jallcom.2021.161214

Drozdowski, W., Makowski, M., Witkowski, M. E., Wojtowicz, A. J., Irmscher, K., Schewski, R., & Galazka, Z. (2021). Recent progress in the development of β-Ga₂O₃ scintillator crystals grown by the Czochralski method. Optical Materials Express, 11(8), 2488. https://doi.org/10.1364/OME.431340

Stokey, M., Korlacki, R., Knight, S., Ruder, A., Hilfiker, M., Galazka, Z., Irmscher, K., Zhang, Y., Zhao, H., Darakchieva, V., & Schubert, M. (2021). Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In₂O₃. Journal of Applied Physics, 129(22), 225102. https://doi.org/10.1063/5.0052848

Rodenbücher, C., Guguschev, C., Korte, C., Bette, S., & Szot, K. (2021). Is reduced strontium titanate a semiconductor or a Metal? Crystals, 11(7), 744. https://doi.org/10.3390/cryst11070744

Xu, H., Wu, R., Zhang, J.-Y., Han, W., Chen, L., Liang, X., Haw, C. Y., Mazzolini, P., Bierwagen, O., Qi, D.-C., & Zhang, K. H. L. (2021). Revealing the electronic structure and optical properties of CuFeO₂ as a P-type oxide semiconductor. ACS Applied Electronic Materials, 3(4), 1834–1841. https://doi.org/10.1021/acsaelm.1c00090

Windsor, Y. W., Zahn, D., Kamrla, R., Feldl, J., Seiler, H., Chiang, C.-T., Ramsteiner, M., Widdra, W., Ernstorfer, R., & Rettig, L. (2021). Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO. Physical Review Letters, 126(14), 147202. https://doi.org/10.1103/PhysRevLett.126.147202

Regmi, S., Li, Z., Srivastava, A., Mahat, R., Kc, S., Rastogi, A., Galazka, Z., Datta, R., Mewes, T., & Gupta, A. (2021). Structural and magnetic properties of NiFe₂O₄ thin films grown on isostructural lattice-matched substrates. Applied Physics Letters, 118(15), 152402. https://doi.org/10.1063/5.0047865

Lyle, L. A. M., Jiang, K., Favela, E. V., Das, K., Popp, A., Galazka, Z., Wagner, G., & Porter, L. M. (2021). Effect of metal contacts on (100) β-Ga ₂O₃ Schottky barriers. Journal of Vacuum Science & Technology A, 39(3), 033202. https://doi.org/10.1116/6.0000877

Hilfiker, M., Stokey, M., Korlacki, R., Kilic, U., Galazka, Z., Irmscher, K., Zollner, S., & Schubert, M. (2021). Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters. Applied Physics Letters, 118(13), 132102. https://doi.org/10.1063/5.0043686

Vogt, P., Hensling, F. V. E., Azizie, K., Chang, C. S., Turner, D., Park, J., McCandless, J. P., Paik, H., Bocklund, B. J., Hoffman, G., Bierwagen, O., Jena, D., Xing, H. G., Mou, S., Muller, D. A., Shang, S.-L., Liu, Z.-K., & Schlom, D. G. (2021). Adsorption-controlled growth of Ga₂O₃ by suboxide molecular-beam epitaxy. APL Materials, 9(3), 031101. https://doi.org/10.1063/5.0035469

Zeuschner, S. P., Mattern, M., Pudell, J.-E., von Reppert, A., Rössle, M., Leitenberger, W., Schwarzkopf, J., Boschker, J. E., Herzog, M., & Bargheer, M. (2021). Reciprocal space slicing: A time-efficient approach to femtosecond x-Ray diffraction. Structural Dynamics, 8(1), 014302. https://doi.org/10.1063/4.0000040

Xu, L., Fauqué, B., Zhu, Z., Galazka, Z., Irmscher, K., & Behnia, K. (2021). Thermal conductivity of bulk In₂O₃ single crystals. Physical Review Materials, 5(1), 014603. https://doi.org/10.1103/PhysRevMaterials.5.014603

Gopalan, P., Knight, S., Chanana, A., Stokey, M., Ranga, P., Scarpulla, M. A., Krishnamoorthy, S., Darakchieva, V., Galazka, Z., Irmscher, K., Fiedler, A., Blair, S., Schubert, M., & Sensale-Rodriguez, B. (2020). The anisotropic quasi-static permittivity of single-crystal β -Ga₂O₃ measured by terahertz spectroscopy. Applied Physics Letters, 117(25), 252103. https://doi.org/10.1063/5.0031464

Jovic, V., Moser, S., Papadogianni, A., Koch, R. J., Rossi, A., Jozwiak, C., Bostwick, A., Rotenberg, E., Kennedy, J. V., Bierwagen, O., & Smith, K. E. (2020). The itinerant 2D electron gas of the indium oxide (111) surface: Implications for carbon- and energy-conversion applications. Small (Weinheim an Der Bergstrasse, Germany), 16(12), 1903321. https://doi.org/10.1002/smll.201903321

Stokey, M., Korlacki, R., Knight, S., Hilfiker, M., Galazka, Z., Irmscher, K., Darakchieva, V., & Schubert, M. (2020). Brillouin zone center phonon modes in ZnGa₂O₄. Applied Physics Letters, 117(5), 052104. https://doi.org/10.1063/5.0012526

Rastogi, A., Li, Z., Singh, A. V., Regmi, S., Peters, T., Bougiatioti, P., Carsten né Meier, D., Mohammadi, J. B., Khodadadi, B., Mewes, T., Mishra, R., Gazquez, J., Borisevich, A. Y., Galazka, Z., Uecker, R., Reiss, G., Kuschel, T., & Gupta, A. (2020). Enhancement in thermally generated spin voltage at the interfaces between Pd and NiFe₂O₄ films grown on lattice-matched substrates. Physical Review Applied, 14(1), 014014. https://doi.org/10.1103/PhysRevApplied.14.014014

Jang, Y., Hong, S., Seo, J., Cho, H., Char, K., & Galazka, Z. (2020). Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4. Applied Physics Letters, 116(20), 202104. https://doi.org/10.1063/5.0007716

Drozdowski, W., Makowski, M., Witkowski, M. E., Wojtowicz, A. J., Schewski, R., Irmscher, K., & Galazka, Z. (2020). Semiconductor scintillator development: Pure and doped β-Ga2O3. Optical Materials, 105, 109856. https://doi.org/10.1016/j.optmat.2020.109856

Schubert, M., Mock, A., Korlacki, R., Knight, S., Monemar, B., Goto, K., Kumagai, Y., Kuramata, A., Galazka, Z., Wagner, G., Tadjer, M. J., Wheeler, V. D., Higashiwaki, M., & Darakchieva, V. (2020). Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry β-Ga₂O₃. In M. Higashiwaki & S. Fujita (Eds.), Gallium Oxide (Vol. 293, pp. 501–534). Springer International Publishing. https://doi.org/10.1007/978-3-030-37153-1_28

Zimmermann, C., Frodason, Y. K., Barnard, A. W., Varley, J. B., Irmscher, K., Galazka, Z., Karjalainen, A., Meyer, W. E., Auret, F. D., & Vines, L. (2020). Ti- and Fe-related charge transition levels in β−Ga2O3. Applied Physics Letters, 116(7), 072101. https://doi.org/10.1063/1.5139402

Hirschle, C., Schreuer, J., Ganschow, S., & Schulze-Jonack, I. (2019). Thermoelastic properties of rare-earth scandates SmScO₃ , TbScO₃ and DyScO₃. Journal of Applied Physics, 126(16), 165103. https://doi.org/10.1063/1.5108584

Simion, C. E., Schipani, F., Papadogianni, A., Stanoiu, A., Budde, M., Oprea, A., Weimar, U., Bierwagen, O., & Barsan, N. (2019). Conductance model for single-crystalline/compact metal oxide gas-sensing layers in the nondegenerate limit: Example of epitaxial SnO₂ (101). ACS Sensors, 4(9), 2420–2428. https://doi.org/10.1021/acssensors.9b01018

Nagata, T., Bierwagen, O., Galazka, Z., Ueda, S., Imura, M., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study on electronic state and electrical properties of SnO₂ single crystals. Japanese Journal of Applied Physics, 58(8), 080903. https://doi.org/10.7567/1347-4065/ab2c1e

Michel, J., Splith, D., Rombach, J., Papadogianni, A., Berthold, T., Krischok, S., Grundmann, M., Bierwagen, O., von Wenckstern, H., & Himmerlich, M. (2019). Processing strategies for high-performance Schottky contacts on n-type oxide semiconductors: Insights from In₂O₃. ACS Applied Materials & Interfaces, 11(30), 27073–27087. https://doi.org/10.1021/acsami.9b06455

Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., Rana, J., Tellekamp, M. B., Boschker, J. E., Markurt, T., Swallow, J. E. N., Jones, L. A. H., Veal, T. D., Yang, W., Lee, T.-L., Rodolakis, F., Sadowski, J. T., Prendergast, D., Lee, W.-C., … Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO₂. Physical Review Materials, 3(7), 074602. https://doi.org/10.1103/PhysRevMaterials.3.074602

Nagata, T., Bierwagen, O., Galazka, Z., Imura, M., Ueda, S., Yamashita, Y., & Chikyow, T. (2019). Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In₂O₃ (111) single crystal. Japanese Journal of Applied Physics, 58(SD), SDDG06. https://doi.org/10.7567/1347-4065/ab0ff0

Grillo, A., Barrat, J., Galazka, Z., Passacantando, M., Giubileo, F., Iemmo, L., Luongo, G., Urban, F., Dubourdieu, C., & Di Bartolomeo, A. (2019). High field-emission current density from β−Ga ₂O₃  nanopillars. Applied Physics Letters, 114(19), 193101. https://doi.org/10.1063/1.5096596

Lee, W.-C., Wahila, M. J., Mukherjee, S., Singh, C. N., Eustance, T., Regoutz, A., Paik, H., Boschker, J. E., Rodolakis, F., Lee, T.-L., Schlom, D. G., & Piper, L. F. J. (2019). Cooperative effects of strain and electron correlation in epitaxial VO₂ and NbO₂. Journal of Applied Physics, 125(8), 082539. https://doi.org/10.1063/1.5052636

Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., Parisini, A., Bosi, M., & Fornari, R. (2019). The electronic structure of ε −Ga₂O₃. APL Materials, 7(2), 022522. https://doi.org/10.1063/1.5054395

Feneberg, M., Lidig, C., White, M. E., Tsai, M. Y., Speck, J. S., Bierwagen, O., Galazka, Z., & Goldhahn, R. (2018). Anisotropic optical properties of highly doped rutile SnO₂ : Valence band contributions to the Burstein-Moss shift. APL Materials, 7(2), 022508. https://doi.org/10.1063/1.5054351

Tetzner, K., Thies, A., Bahat Treidel, E., Brunner, F., Wagner, G., & Würfl, J. (2018). Selective area isolation of β−Ga ₂O₃ using multiple energy nitrogen ion implantation. Applied Physics Letters, 113(17), 172104. https://doi.org/10.1063/1.5046139

Kracht, M., Karg, A., Feneberg, M., Bläsing, J., Schörmann, J., Goldhahn, R., & Eickhoff, M. (2018). Anisotropic optical properties of metastable ( 011¯2) α−Ga ₂O₃Grown by Plasma-Assisted Molecular Beam Epitaxy. Physical Review Applied, 10(2), 024047. https://doi.org/10.1103/PhysRevApplied.10.024047

Hirschle, C., Schreuer, J., & Galazka, Z. (2018). Interplay of cation ordering and thermoelastic properties of spinel structure MgGa₂O₄. Journal of Applied Physics, 124(6), 065111. https://doi.org/10.1063/1.5037786

Schleife, A., Neumann, M. D., Esser, N., Galazka, Z., Gottwald, A., Nixdorf, J., Goldhahn, R., & Feneberg, M. (2018). Optical properties of In₂O₃ from experiment and first-principles theory: influence of lattice screening. New Journal of Physics, 20(5), 053016. https://doi.org/10.1088/1367-2630/aabeb0

Zhang, J. Y., Li, W. W., Hoye, R. L. Z., MacManus-Driscoll, J. L., Budde, M., Bierwagen, O., Wang, L., Du, Y., Wahila, M. J., Piper, L. F. J., Lee, T.-L., Edwards, H. J., Dhanak, V. R., & Zhang, K. H. L. (2018). Electronic and transport properties of Li-doped NiO epitaxial thin films. Journal of Materials Chemistry C, 6(9), 2275–2282. https://doi.org/10.1039/C7TC05331B

Berthold, T., Katzer, S., Rombach, J., Krischok, S., Bierwagen, O., & Himmerlich, M. (2017). Towards understanding the cross-sensitivity of In ₂O₃ based ozone sensors : Effects of O₃, O₂ and H₂O adsorption at In ₂O₃ (111) surfaces. Physica Status Solidi (b), 255(4), 1700324. https://doi.org/10.1002/pssb.201700324

Li, D., Hoffmann, V., Richter, E., Tessaro, T., Galazka, Z., Weyers, M., & Tränkle, G. (2017). MOVPE growth of violet GaN LEDs on β−Ga ₂O₃ substrates. Journal of Crystal Growth, 478, 212–215. https://doi.org/10.1016/j.jcrysgro.2017.08.023

Segura, A., Artús, L., Cuscó, R., Goldhahn, R., & Feneberg, M. (2017). Band gap of corundumlike  α−Ga ₂O₃ determined by absorption and ellipsometry. Physical Review Materials, 1(2), 024604. https://doi.org/10.1103/PhysRevMaterials.1.024604

Singh, A. V., Khodadadi, B., Mohammadi, J. B., Keshavarz, S., Mewes, T., Negi, D. S., Datta, R., Galazka, Z., Uecker, R., & Gupta, A. (2017). Bulk single crystal‐like structural and magnetic characteristics of epitaxial spinel ferrite thin films with elimination of antiphase boundaries. Advanced Materials, 29(30), 1701222. https://doi.org/10.1002/adma.201701222

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Szalkai, D., Galazka, Z., Irmscher, K., Tutto, P., Klix, A., & Gehre, D. (2017). β−Ga ₂O₃ solid-state devices for fast neutron detection. IEEE Transactions on Nuclear Science, 64(6), 1574–1579. https://doi.org/10.1109/TNS.2017.2698831

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Philippen, J., Guguschev, C., & Klimm, D. (2017). Single crystal fiber growth of cerium doped strontium yttrate, SrY₂O₄:Ce³⁺. Journal of Crystal Growth, 459, 17–22. https://doi.org/10.1016/j.jcrysgro.2016.11.033

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Haeberle, J., Brizzi, S., Gaspar, D., Barquinha, P., Galazka, Z., Schulz, D., & Schmeißer, D. (2016). A spectroscopic comparison of IGZO thin films and the parent In₂O₃ , Ga₂O₃ , and ZnO single crystals. Materials Research Express, 3(10), 106302. https://doi.org/10.1088/2053-1591/3/10/106302

Kaspar, T. C., Sushko, P. V., Bowden, M. E., Heald, S. M., Papadogianni, A., Tschammer, C., Bierwagen, O., & Chambers, S. A. (2016). Defect compensation by Cr vacancies and oxygen interstitials in Ti⁴⁺-doped Cr₂O₃ epitaxial thin films. Physical Review B, 94(15), 155409. https://doi.org/10.1103/PhysRevB.94.155409

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